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Электронный компонент: HN58X2416FPIAG

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
HN58X2408FPIAG/HN58X2416FPIAG
HN58X2432FPIAG/HN58X2464FPIAG
Two-wire serial interface
8k EEPROM (1-kword
8-bit)/16k EEPROM (2-kword
8-bit)
32k EEPROM (4-kword
8-bit)/64k EEPROM(8-kword
8-bit)
ADE-203-1262A (Z)
Rev. 1.0
Mar. 30, 2001
Description
HN58X24xxFPIAG series are two-wire serial interface EEPROM (Electrically Erasable and Programmable
ROM). They realize high speed, low power consumption and a high level of reliability by employing
advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also
have a 32-byte page programming function to make their write operation faster.
Features
Single supply: 1.8 V to 5.5 V
Two-wire serial interface (I
2
C
TM
serial bus*
1
)
Clock frequency: 400 kHz
Power dissipation:
Standby: 3
A(max)
Active (Read): 1 mA(max)
Active (Write): 3 mA(max)
Automatic page write: 32-byte/page
Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
Endurance: 10
5
Cycles (Page write mode)
Data retention: 10 Years
HN58X2408/HN58X2416/HN58X2432/HN58X2464FPIAG
2
Small size packages: SOP-8pin
Shipping tape and reel: 2,500 IC/reel
Temperature range: 40 to +85
C
Note: 1. I
2
C is a trademark of Philips Corporation.
Ordering Information
Type No.
Internal organization
Operating voltage Frequency
Package
HN58X2408FPIAG
8k bit (1024
8-bit)
1.8 V to 5.5 V
400 kHz
150 mil 8-pin plastic SOP
(FP-8DB)
HN58X2416FPIAG
16k bit (2048
8-bit)
HN58X2432FPIAG
32k bit (4096
8-bit)
HN58X2464FPIAG
64k bit (8192
8-bit)
Pin Arrangement
1
2
3
4
8
7
6
5
A0
A1
A2
V
SS
V
CC
WP
SCL
SDA
(Top view)
8-pin SOP
Pin Description
Pin name
Function
A0 to A2
Device address
SCL
Serial clock input
SDA
Serial data input/output
WP
Write protect
V
CC
Power supply
V
SS
Ground
HN58X2408/HN58X2416/HN58X2432/HN58X2464FPIAG
3
Block Diagram
Control
logic
High voltage generator
Address generator
X decoder
Y decoder
Memory array
Y-serect & Sense amp.
Serial-parallel converter
V
CC
V
SS
WP
A0, A1, A2
SCL
SDA
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V
SS
V
CC
0.6 to +7.0
V
Input voltage relative to V
SS
Vin
0.5*
2
to +7.0*
3
V
Operating temperature range*
1
Topr
40 to +85
C
Storage temperature range
Tstg
65 to +125
C
Notes: 1. Including electrical characteristics and data retention.
2. Vin (min): 3.0 V for pulse width
50 ns.
3. Should not exceed V
CC
+ 1.0 V.
DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
V
CC
1.8
--
5.5
V
V
SS
0
0
0
V
Input high voltage
V
IH
V
CC
0.7
--
V
CC
+ 1.0
V
Input low voltage
V
IL
0.3*
1
--
V
CC
0.3
V
Operating temperature
Topr
40
--
85
C
Note:
1. V
IL
(min): 1.0 V for pulse width
50 ns.