2-491
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
VCC OUT
DCS/PCS OUT
VCC2
DCS/PCS IN
BAND SELECT
VREG
VRAMP
TX ENABLE
VBATT
GSM850/GSM900 OUT
VCC2
GSM850/GSM900 IN
10
11
12
1
3
2
6
5
4
9
8
7
RF3140
QUAD-BAND GSM850/GSM900/DCS/PCS
POWER AMP MODULE
3V Quad-Band GSM Handsets
Commercial and Consumer Systems
Portable Battery-Powered Equipment
GSM850/EGSM900/DCS/PCS Products
GPRS Class 12 Compatible
Power Star
TM
Module
The RF3140 is a high-power, high-efficiency power ampli-
fier module with integrated power control. The device is
self-contained with 50
input and output terminals. The
power control function is also incorporated, eliminating
the need for directional couplers, detector diodes, power
control ASICs and other power control circuitry; this
allows the module to be driven directly from the DAC out-
put. The device is designed for use as the final RF ampli-
fier in GSM850, EGSM900, DCS and PCS handheld
digital cellular equipment and other applications in the
824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to
1785MHz and 1850MHz to 1910MHz bands. On-board
power control provides over 50dB of control range with an
analog voltage input; and, power down with a logic "low"
for standby operation.
Complete Power Control Solution
Single 3.0V to 5.5V Supply Voltage
+35dBm GSM Output Power at 3.5V
+33dBm DCS/PCS Output Power at 3.5V
60% GSM and 55% DCS/PCS
EFF
10mmx10mm Package Size
RF3140
Quad-Band GSM850/GSM900/DCS/PCS Power
Amp Module
RF3140
Power Amp Module 5-Piece Sample Pack
RF3140 PCBA
Fully Assembled Evaluation Board
0
Rev A6 040113
10.00 0.10
10.00
0.10
Pin 1
1.70
1.45
0.450
0.075
9.
098 T
Y
P
0.
000
1.
797
8.
205
8.
280
0.
400 T
Y
P
1.
200 T
Y
P
1.
800 T
Y
P
2.
600 T
Y
P
3.
200 T
Y
P
4.
000 T
Y
P
5.
400 T
Y
P
6.
000 T
Y
P
6.
800 T
Y
P
7.
400 T
Y
P
8.
200 T
Y
P
8.
275 T
Y
P
8.
800 T
Y
P
9.
600 T
Y
P
4.
600 T
Y
P
8.747
5.925
4.075
1.245
0.306
9.600 TYP
8.800 TYP
8.200 TYP
7.400 TYP
6.800 TYP
6.000 TYP
5.400 TYP
4.600 TYP
4.000 TYP
3.200 TYP
2.600 TYP
1.800 TYP
1.200 TYP
0.400 TYP
0.000
Pin 1
Package Style: Module (10mmx10mm)
2-492
RF3140
Rev A6 040113
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.3 to +6.0
V
DC
Power Control Voltage (V
RAMP
)
-0.3 to +1.8
V
Input RF Power
+8.5
dBm
Max Duty Cycle
50
%
Output Load VSWR
10:1
Operating Case Temperature
-20 to +85
C
Storage Temperature
-55 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall Power Control
V
RAMP
Power Control "ON"
1.5
V
Max. P
OUT
, Voltage supplied to the input
Power Control "OFF"
0.2
0.25
V
Min. P
OUT
, Voltage supplied to the input
V
RAMP
Input Capacitance
15
20
pF
DC to 2MHz
V
RAMP
Input Current
10
A
V
RAMP
=V
RAMP MAX
Turn On/Off Time
2
s
V
RAMP
=0.2V to V
RAMP MAX
Overall Power Supply
Power Supply Voltage
3.5
V
Specifications
3.0
5.5
V
Nominal operating limits
Power Supply Current
1
10
A
P
IN
<-30dBm, TX Enable=Low,
Temp=-20C to +85C
150
mA
V
RAMP
=0.2V, TX Enable=High
V
REG
Voltage
2.7
2.8
2.9
V
V
REG
Current
7
8
mA
TX Enable=High
10
A
TX Enable=Low
Overall Control Signals
Band Select "Low"
0
0
0.5
V
Band Select "High"
1.9
2.0
3.0
V
Band Select "High" Current
20
50
A
TX Enable "Low"
0
0
0.5
V
TX Enable "High"
1.9
2.0
3.0
V
TX Enable "High" Current
1
2
A
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
2-493
RF3140
Rev A6 040113
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (GSM850 Mode)
Temp=+25 C, V
BATT
=3.5V,
V
RAMP
=V
RAMP MAX
, P
IN
=3dBm,
V
REG
=2.8V, Freq=824MHz to 849MHz,
25% Duty Cycle, Pulse Width=1154
s
Operating Frequency Range
824 to 849
MHz
Maximum Output Power
+34.2
+35.0
dBm
Temp = 25C, V
BATT
=3.5V,
V
RAMP
=V
RAMP MAX
32
33
dBm
Temp=+85 C, V
BATT
=3.0V,
V
RAMP
=V
RAMP MAX
Total Efficiency
45
55
%
At P
OUT
MAX
, V
BATT
=3.5V
Input Power Range
0
+3
+5
dBm
Maximum output power guaranteed at mini-
mum drive level
Output Noise Power
-86
-84
dBm
RBW=100kHz, 869MHz to 894MHz,
P
OUT
> +5dBm
Forward Isolation 1
-35
-25
dBm
TXEnable=Low, 0V, P
IN
=+5dBm
Forward Isolation 2
-25
-10
dBm
TXEnable=High, P
IN
=+5dBm, V
RAMP
=0.2V
Cross Band Isolation at 2f
0
-30
-20
dBm
V
RAMP
=0.2V to V
RAMP MAX
Second Harmonic
-15
-5
dBm
V
RAMP
=0.2V to V
RAMP MAX
Third Harmonic
-30
-10
dBm
V
RAMP
=0.2V to V
RAMP MAX
All Other
Non-Harmonic Spurious
-36
dBm
V
RAMP
=0.2V to V
RAMP MAX
Input Impedance
50
Input VSWR
2.5:1
V
RAMP
=0.2V to V
RAMP MAX
Output Load VSWR Stability
8:1
Spurious<-36dBm, RBW=3MHz
Output Load VSWR Ruggedness
10:1
Set V
RAMP
where V
RAMP
<34.2dBm into
50
load
Output Load Impedance
50
Load impedance presented at RF OUT pad
Power Control V
RAMP
Power Control Range
55
dB
V
RAMP
=0.2V to V
RAMP MAX
Note: V
RAMP MAX
=3/8*V
BATT
+0.18<1.5V
2-494
RF3140
Rev A6 040113
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (GSM900 Mode)
Temp=+25 C, V
BATT
=3.5V,
V
RAMP
=V
RAMP MAX
, P
IN
=3dBm,
V
REG
=2.8V, Freq=880MHz to 915MHz,
25% Duty Cycle, Pulse Width=1154
s
Operating Frequency Range
880 to 915
MHz
Maximum Output Power
+34.2
+35.0
dBm
Temp = 25C, V
BATT
=3.5V,
V
RAMP
=V
RAMP MAX
32
33
dBm
Temp=+85 C, V
BATT
=3.0V,
V
RAMP
=V
RAMP MAX
Total Efficiency
52
58
%
At P
OUT
MAX
, V
BATT
=3.5V
Input Power Range
0
+3
+5
dBm
Maximum output power guaranteed at mini-
mum drive level
Output Noise Power
-86
-82
dBm
RBW=100kHz, 925MHz to 935MHz,
P
OUT
> +5dBm
-88
-84
dBm
RBW=100kHz, 935MHz to 960MHz,
P
OUT
> +5dBm
Forward Isolation 1
-35
-25
dBm
TXEnable=Low, 0V, P
IN
=+5dBm
Forward Isolation 2
-25
-10
dBm
TXEnable=High, V
RAMP
=0.2V, P
IN
=+5dBm
Cross Band Isolation 2f
0
-24
-20
dBm
V
RAMP
=0.2V to V
RAMP MAX
Second Harmonic
-15
-5
dBm
V
RAMP
=0.2V to V
RAMP MAX
Third Harmonic
-30
-10
dBm
V
RAMP
=0.2V to V
RAMP MAX
All Other
Non-Harmonic Spurious
-36
dBm
V
RAMP
=0.2V to V
RAMP MAX
Input Impedance
50
Input VSWR
2.5:1
V
RAMP
=0.2V to V
RAMP MAX
Output Load VSWR Stability
8:1
Spurious<-36dBm, RBW=3MHz
Output Load VSWR Ruggedness
10:1
Set V
RAMP
where V
RAMP
<34.2dBm into
50
load
Output Load Impedance
50
Load impedance presented at RF OUT pad
Power Control V
RAMP
Power Control Range
50
dB
V
RAMP
=0.2V to V
RAMP MAX
Note: V
RAMP MAX
=3/8*V
BATT
+0.18<1.5V
2-495
RF3140
Rev A6 040113
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (DCS Mode)
Temp=25C, V
BATT
=3.5V,
V
RAMP
=V
RAMP MAX
, P
IN
=3dBm,
V
REG
=2.8V, Freq=1710MHz to 1785MHz,
25% Duty Cycle, pulse width=1154
s
Operating Frequency Range
1710 to 1785
MHz
Maximum Output Power
+32
+33
dBm
Temp=25C, V
BATT
=3.5V,
V
RAMP
=V
RAMP MAX
+29.5
+31.0
dBm
Temp=+85C, V
BATT
=3.0V,
V
RAMP
=V
RAMP MAX
Total Efficiency
48
55
%
At P
OUT MAX,
V
BATT
=3.5V
Input Power Range
0
+3
+5
dBm
Maximum output power guaranteed at mini-
mum drive level
Output Noise Power
-85
-80
dBm
RBW=100kHz, 1805MHz to 1880MHz,
P
OUT
> 0dBm,
V
BATT
=3.5V
Forward Isolation 1
-40
-30
dBm
TXEnable=Low, 0V, P
IN
=+5dBm
Forward Isolation 2
-20
-10
dBm
TXEnable=High, V
RAMP
=0.2V, P
IN
=0dBm
to +5dBm
Second Harmonic
-15
-7
dBm
V
RAMP
=0.2V to V
RAMP MAX
Third Harmonic
-30
-15
dBm
V
RAMP
=0.2V to V
RAMP MAX
All Other
Non-Harmonic Spurious
-36
dBm
V
RAMP
=0.2V to V
RAMP MAX
Input Impedance
50
Input VSWR
-
2.5:1
V
RAMP
=0.2V to V
RAMP MAX
Output Load VSWR Stability
8:1
Spurious<-36dBm, RBW=3MHz
Output Load VSWR Ruggedness
10:1
Set V
RAMP
where V
RAMP
<34.2dBm into
50
load
Output Load Impedance
50
Load impedance presented at RF OUT pin
Power Control V
RAMP
Power Control Range
50
dB
V
RAMP
=0.2V to V
RAMP MAX
, P
IN
=+5dBm
Note: V
RAMP MAX
=3/8*V
BATT
+0.18<1.5V
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