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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
14
13
12
11
10
9
8
RF IN
GND
GND
PD
VCC1
VCC2
PRE AMP PWR
RF OUT
RF OUT
GND
GND
GND
RF OUT
RF OUT
BIAS
CIRCUITS
FPA
PRE
AMP
RF2103P
MEDIUM POWER LINEAR AMPLIFIER
Digital Communication Systems
Spread-Spectrum Communication Systems
Driver for Higher Power Linear Applications
Portable Battery-Powered Equipment
Commercial and Consumer Systems
Base Station Equipment
The RF2103P is a medium power linear amplifier IC. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final linear RF amplifier in
UHF radio transmitters operating between 450MHz and
1000 MHz. It may also be used as a driver amplifier in
higher power applications. The device is self-contained
with the exception of the output matching network, power
supply feed line, and bypass capacitors, and it produces
an output power level of 750mW (CW). The device can
be used in 3 cell battery applications. The maximum CW
output at 3.6V is 175mW. The unit has a total gain of
31dB, depending upon the output matching network.
450MHz to 1000MHz Operation
Up to 750mW CW Output Power
31dB Small Signal Gain
Single 2.7V to 7.5V Supply
47% Efficiency
Digitally Controlled Power Down Mode
RF2103P
Medium Power Linear Amplifier
RF2103P PCBA
Fully Assembled Evaluation Board
2
Rev B1 010720
0.156
0.148
0.059
0.057
0.252
0.236
0.010
0.004
.018
.014
8 MAX
0 MIN
0.0500
0.0164
0.010
0.007
0.347
0.339
0.050
Package Style: SOIC-14
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RF2103P
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +7.5
V
DC
Power Down Voltage (V
PD
)
-0.5 to +5
V
DC Supply Current
350
mA
Input RF Power
+12
dBm
Output Load VSWR
10:1
Operating Case Temperature
-40 to +100
C
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25 C, V
CC
= 5.8V, V
PD
= 5.0V,
Z
LOAD
= 18
, P
IN
=0dBm, Freq=915MHz
Frequency Range
450 to 1000
MHz
Maximum Output Power
+28.8
dBm
V
CC
= 7.5V
Maximum Output Power
+26.5
dBm
V
CC
= 5.8V
Second Harmonic
-24
dBc
Without external second harmonic trap
Third Harmonic
-30
dBc
Output Noise Power
<-125
dBm/Hz
Input Impedance
50
With external matching network; see appli-
cation schematic
Input VSWR
<2:1
With external matching network; see appli-
cation schematic
Output Impedance
18+j0
Load Impedance for Optimal Match
Nominal 5.8V
Configuration
V
CC
= 5.8V, V
PD
= 4.0V, Z
LOAD
= 18
,
P
IN
=0dBm, Freq= 830MHz
Linear Power Gain
31
dB
Saturated CW Output Power
24
+26.5
dBm
IM
3
-40
-25
dBc
P
OUT
= +18.5dBm/tone
IM
5
-45
-30
dBc
P
OUT
= +18.5dBm/tone
Collector Current, I
CC
175
250
mA
Total of pins 7 and 8
V
PD
Current
<3.5
mA
Into pin 4
CW Total Efficiency
47
%
Two Tone Total Efficiency
26
%
P
OUT
= +18.5dBm/tone
Power Supply
Power Supply Voltage
2.7 to 7.5
V
Power Supply Idle Current
45
80
mA
Total "OFF" Current Drain
1
10
A
V
PD
< 0.1V
DC
Turn-on Time
<100
ns
V
PD
= 0 to V
PD
=+4V
DC
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Pin
Function
Description
Interface Schematic
1
RF IN
RF input pin. There is an internal blocking capacitor between this pin
and the preamp input, but not between the pin and an internal 2k
resistor to ground.
2
GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
3
GND
Same as pin 2.
4
PD
Power down control voltage. When this pin is at 0V, the device will be in
power down mode, dissipating minimum DC power. When this pin is at
V
CC
(3V to 6.5V), the device will be in full power mode delivering maxi-
mum available gain and output power capability. This pin may also be
used to perform some degree of gain control or power control when set
to voltages between 0V and V
CC
. It is not optimized for this function so
the transfer function is not linear over a wide range as with other
devices specifically designed for analog gain control; however, it may
be usable for coarse adjustment or in some closed loop AGC systems.
This pin should not, in any circumstance, be higher in voltage than V
CC
.
This pin should also have an external bypassing capacitor.
5
VCC1
Positive supply for the active bias circuits. This pin can be externally
combined with pin 6 (VCC2) and the pair bypassed with a single capac-
itor, placed as close as possible to the package. Additional bypassing
of 1
F is also recommended, but proximity to the package is not as crit-
ical. In most applications, pins 5, 6, and 7 can share a single 1
F
bypass capacitor.
6
VCC2
Same as pin 5.
7
PREAMP
PWR
Positive supply for the pre-amplifier. This is an unmatched transistor
collector output. This pin should see an inductive path to AC ground
(V
CC
with bypass capacitor). This inductance can be achieved with a
short, thin microstrip line or with a low value chip inductor (approxi-
mately 1.8nH). At lower frequencies, the inductance value should be
larger (longer microstrip line) and V
CC
should be bypassed with a
larger bypass capacitor. This inductance forms a matching network
with the internal series capacitor between the two amplifier stages, set-
ting the amplifier's frequency of maximum gain. An additional 1
F
bypass capacitor in parallel with the 100pF bypass capacitor is also
recommended, but placement of this component is not as critical. In
most applications, pins 5, 6, and 7 can share a single 1
F bypass
capacitor.
8
RF OUT
Same as pin 14.
9
RF OUT
Same as pin 14.
10
GND
Same as pin 2.
11
GND
Same as pin 2.
12
GND
Same as pin 2.
13
RF OUT
Same as pin 14.
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Application Schematic
Pin
Function
Description
Interface Schematic
14
RF OUT
Amplifier RF output. This is an unmatched collector output of the final
amplifier transistor. It is internally connected to pins 8, 9, 13 and 14 to
provide low series inductance and flexibility in output matching. Bias for
the final power amplifier output transistor must also be provided
through two of these four pins. Typically, pins 8 and 9 are connected to
a network that provides the DC bias and also creates a second har-
monic trap. For 915MHz operation, this harmonic trap network is simply
a single 2pF capacitor from both pins to ground. This capacitor series
resonates with internal bond wires at two times the operating fre-
quency, effectively shorting out the second harmonic. Shorting out this
harmonic serves to increase the amplifier's maximum output power and
efficiency, as well as to lower the level of the second harmonic output.
Typically, pins 13 and 14 are externally connected very close to the
package and used as the RF output with a matching network that pre-
sents the optimum load impedance to the PA for maximum power and
efficiency, as well as providing DC blocking at the output. Shunt protec-
tion diodes are included to clip peak voltage excursions above approxi-
mately 15V to prevent voltage breakdown in worst case conditions.
1
2
3
4
5
6
7
14
13
12
11
10
9
8
BIAS
CIRCUITS
PRE AMP
FPA
100 pF
100
pF
C2
C1
330 pF
1
F
L1
L2
V
CC
RF OUT
22
12 nH
6.8 nH
V
B
V
CC
100 pF
.01" x .2"
(PCB material: FR-4,
Thickness:0.031")
RF IN
For lower frequency
operation: Cut trace
on board and insert
inductor L4
FREQUENCY (MHz) L1 (nH)
L3 (nH)
L2 (nH)
L4 (nH)
C1 (pF)
C2 (pF)
275
480
915
20
15
10
20
20
10
12
6.8
4.7
18
12
6.8
6.8
3.3
4
2
For lower frequency
operation: Cut trace
on board and insert
inductor L3
2-5
RF2103P
Rev B1 010720
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Evaluation Board Schematic
915MHz Operation
(Download Bill of Materials from www.rfmd.com.)
SMA
J1
P1-3
P1-1
P1-1
0.01" x 0.2"
(PCB mat'l: FR-4,
Thickness: 0.031")
C10
100 pF
C2
100 pF
C3
100 pF
C9
100 pF
L2
3.3 nH
P1-1
C4
4 pF
RF IN
L1
6.8 nH
C7
2 pF
C5
330 pF
RF OUT
J2
2103400 Rev C
50
Matching Network
1
2
3
4
5
6
7
14
13
12
11
10
9
8
BIAS
CIRCUITS
FPA
PRE
AMP
L3
12 nH
C1
100 pF
L4
6.8 nH
R1
22
P1-1
P1-3
P1
VCC
GND
VB
1
2
3
C8
1 nF
C6
1 nF
50
strip
50
strip
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