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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
VCC2
GND1
PD
RF IN
VCC1
RF OUT
RF OUT
GND2
BIAS
CIRCUITS
RF2127
MEDIUM POWER LINEAR AMPLIFIER
DECT Cordless Applications
PCS Communication Systems
Commercial and Consumer Systems
Portable Battery-Powered Equipment
The RF2127 is a medium-power, high-efficiency, linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 1800MHz digital PCS phone transmitters
requiring
linear
amplification
operating
between
1800 MHz and 1900 MHz, with over 100mW transmitted
power. It will also function as the driver stage for the
RF2125 high power amplifier. A simple power down func-
tion is included for TDD operation.
Single 3.0V to 6.5V Supply
100mW Linear Output Power
25dB Small Signal Gain
30% Efficiency
Digitally Controlled Power Down Mode
1500MHz to 1900MHz Operation
RF2127
Medium Power Linear Amplifier
RF2127 PCBA
Fully Assembled Evaluation Board
2
Rev A3 010720
0.248
0.232
0.200
0.192
0.160
0.152
0.018
0.014
0.050
0.059
0.057
0.010
0.004
-A-
0.0100
0.0076
0.0500
0.0164
8 MAX
0 MIN
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
Package Style: SOIC-8
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (V
CC
)
-0.5 to +7.5
V
DC
Power Down Voltage (V
PD
)
-0.5 to +5.5
V
DC Supply Current
125
mA
Input RF Power
+12
dBm
Output Load VSWR
20:1
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 C, V
CC
=5V, V
PD
=5V, Z
LOAD
= 106
,
P
IN
=-3dBm, Freq=1800MHz
Frequency Range
1500 to 1900
MHz
Maximum Output Power
+20
dBm
V
CC
=5V, Pin=-3dBm
Maximum Output Power
+23
dBm
V
CC
=6V, Pin=0dBm
Total CW Efficiency
30
%
Maximum output, V
CC
= V
PD
=5V
Small-signal Gain
23
25
dB
Second Harmonic
-25
dBc
P
OUT
=20dBm
Third Harmonic
-22
dBc
P
OUT
=20dBm
Input VSWR
2:1
Input Impedance
50
Noise Figure
7
dB
Two-Tone Specification
Average Two-Tone Power
+17
dBm
PEP- 3dB
IM
3
-40
dBc
P
OUT
= +14dBM for each tone
IM
5
-45
dBc
P
OUT
=+14dBM for each tone
IM
7
-44
dBc
P
OUT
=+14dBM for each tone
Two-Tone Power-Added
Efficiency
36
%
Power Control
Power Down "ON"
V
CC
V
Voltage supplied to the input; Part is "ON"
Power Down "OFF"
0
1.2
V
Voltage supplied to the input; Part is "OFF"
Power Supply
Voltage
5
V
Specifications
3.0 to 6.5
V
Operating Limits
Current
50
65
mA
Operating Idle
80
mA
Maximum output
10
A
Power Down
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Pin
Function
Description
Interface Schematic
1
VCC2
Power supply for the driver stage and interstage matching. Matching is
typically done by a microstrip line to V
CC
that is RF grounded at the
V
CC
side. See the application information for details.
2
GND1
Ground connection for the driver stage. Keep traces physically short
and connect immediately to the ground plane for best performance.
This connection should be separated from the ground connection for
the output stage, i.e., using separate traces and vias.
3
PD
Power Down control. When this pin is "low", all circuits are shut off. A
"low" is typically 1.2V or less at room temperature. When this pin is
"high", all circuits are operating normally. A "high" is V
CC
. If V
PD
is
below V
CC
, output power and performance will be degraded. This could
be used to obtain some gain control, but results are not guaranteed.
4
RF IN
RF Input. This is a 50
input, but the actual impedance depends on
the matching provided on pin 1. An external DC blocking capacitor is
required if this port is connected to a DC path to ground.
5
GND2
Ground connection for the output stage. Keep traces physically short
and connect immediately to the ground plane for best performance.
This connection should be separated from the ground connection for
the driver stage, i.e., using separate traces and vias.
6
RF OUT
RF Output and power supply for the output stage. Bias for the output
stage needs to be provided on this pin. This can be done through a
quarter-wave microstrip that is RF grounded on the other end. For
matching to 50
, an external series microstrip line is required.
7
RF OUT
Same as pin 6.
8
VCC1
Power supply for the bias circuits. An external RF bypass capacitor of
22 pF is required. Keep the traces to the capacitor as short as possible,
and connect the capacitor immediately to the ground plane.
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Application Schematic
1850MHz
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
1
2
3
4
8
7
6
5
BIAS
CIRCUITS
PACKAGE BASE
330 pF
22 pF
V
CC
RF IN
6.2 pF
22 pF
1 nF
16 pF
RF OUT
PCB material: FR-4
Thickness: 0.031"
VPD
POWER
DOWN
0.010" x 0.170"
50
strip
0.010" x 0.170"
W=0.010"
L=Quarter wave length
1
2
3
4
8
7
6
5
BIAS
CIRCUITS
C4
330 pF
C7
22 pF
C6
6.2 pF
C2
1 nF
C8
16 pF
C1
1
F
P1-1
C5
330 pF
C3
1 nF
P1-3
RF IN
RF OUT
J1
J2
P1-1
P1-3
P1
VPD
GND
VCC
1
2
3
2127400 Rev A
W=0.010"
L=0.170"
L=0.320"
W=0.010"
(PCB mat'l: FR-4,
Thickness: 0.031")
0.010" x 0.170"
0.025" x 0.060" 0.025" x 0.165"
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Evaluation Board Layout
Board Size 1.55" x 1.07"
PDF 
ZIP