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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
VCC
RF IN
GND
PC
RF OUT
RF OUT
RF OUT
RF OUT
BIAS
PACKAGE BASE
GND
RF2137
LINEAR POWER AMPLIFIER
4.8V AMPS Cellular Handsets
4.8V CDMA/AMPS Handsets
4.8V JCDMA/TACS Handsets
Driver Amplifier in Cellular Base Stations
Portable Battery-Powered Equipment
The RF2137 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in dual-mode 4-cell CDMA/AMPS hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 950MHz band. The
device is self-contained with 50
input and the output
can be easily matched to obtain optimum power, effi-
ciency, and linearity characteristics at all recommended
supply voltages.
Single 4.2V to 6.0V Supply
Up to 29 dBm Linear Output Power
27dB Gain With Analog Gain Control
45% Linear Efficiency
On-board Power Down Mode
800MHz to 950MHz Operation
RF2137
Linear Power Amplifier
RF2137 PCBA
Fully Assembled Evaluation Board
2
Rev B2 010720
3.90
0.10
6.00
0.20
4.90
0.10
0.43
0.05
1.27
1.40
0.10
0.05
0.05
-A-
Exposed
Heat Sink
2.70
0.10
0.22
0.03
0.60
0.15
8 MAX
0 MIN
1.70
0.10
Dimensions in mm.
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Package Style: SOIC-8 Slug
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (No RF)
-0.5 to +8.0
V
DC
Supply Voltage (P
OUT
<31dBm)
-0.5 to +6.0
V
DC
Power Control Voltage (V
PC
)
-0.5 to +6.0 or V
CC
V
DC Supply Current
800
mA
Input RF Power
+12
dBm
Output Load VSWR
10:1
Ambient Operating Temperature
-30 to +90
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25 C, V
CC
=5.0 V, V
PC
=3.6V,
Freq= 824MHz to 849MHz
Usable Frequency Range
800
824 to 849
950
MHz
Linear Gain
25
27
29
dB
Total Linear Efficiency
40
45
%
Efficiency at Max Output
50
55
%
OFF Isolation
27
dB
V
PC
=0V,P
IN
=+6dBm
Second Harmonic
-30
dBc
Including Second Harmonic Trap
Maximum Linear Output Power
28.5
29
dBm
IS-95A CDMA Modulation
Adjacent Channel Power @
885kHz offset
-46
-44
dBc
Pout = 28 dBm
ACPR can be improved by trading off effi-
ciency.
Adjacent Channel Power @
1.98MHz offset
-58
-56
dBc
Pout = 28 dBm
Max CW Output Power
31.5
+32.0
dBm
Input VSWR
<2:1
Output Load VSWR
10:1
No oscillations
Power Down
Turn On/Off Time
100
ns
Total Current
10
A
"OFF" State
V
PC
"OFF" Voltage
0.2
0.5
V
Threshold Voltage at Input
V
PC
"ON" Voltage
3.6
Vcc
V
Threshold Voltage at Input
Power Supply
Power Supply Voltage
4.2
5.0
6.0
V
Operating voltage
Idle Current
40
100
mA
V
PC
= 4.0V
Current into VPC pin
15
20
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Refer to "Handling of PSOP and PSSOP Products"
on page 16-15 for special handling information.
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Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Pin
Function
Description
Interface Schematic
1
VCC
Power supply for the driver stage, and interstage matching. Shunt
inductance is required on this pin, which can be achieved by an induc-
tor to V
CC
, with a decoupling capacitor on the V
CC
side. The value of
the inductor is frequency dependent; 3.3nH is required for 830MHz,
and 1.2nH for 950MHz. Instead of an inductor, a high impedance
microstrip line can be used.
2
RF IN
RF input. This is a 50
input, but the actual input impedance depends
on the interstage matching network connected to pin 1. An external DC
blocking capacitor is required if this port is connected to a DC path to
ground or a DC voltage.
See pin 1.
3
GND
Ground connection. Keep traces physically short and connect immedi-
ately to the ground plane for best performance.
4
PC
Power Control. When this pin is "low", all circuits are shut off. A "low" is
typically 0.5V or less at room temperature. During normal operation
this pin is the power control. Control range varies from about 2V for
0dBm to V
CC
for +31dBm RF output power. The maximum power that
can be achieved depends on the actual output matching. PC should
never exceed 6.0V or V
CC
, whichever is lowest.
5
RF OUT
RF Output and power supply for the output stage. The three output pins
are combined, and bias voltage for the final stage is provided through
these pins. The external path must be kept symmetric until combined to
ensure stability. An external matching network is required to provide the
optimum load impedance; see the application schematics for details.
6
RF OUT
Same as pin 5.
See pin 5.
7
RF OUT
Same as pin 5.
See pin 5.
8
RF OUT
Same as pin 5.
See pin 5.
Pkg
Base
GND
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device
may be required.
RF IN
VCC
From Bias
Stages
PC
To RF
Transistors
RF OUT
From Bias
Stages
1
2
3
4
8
7
6
5
BIAS
PACKAGE BASE
R1
10 k
C3
100 pF
C7
1 nF
50
strip
RF IN
J1
L1
1.8 nH
VCC
L2
4.7 nH
C1
1.5 pF
C5
100 pF
C9
1 nF
C8
3.3
F
L3
1.5 nH
C2
7.5 pF
C4
100 pF
50
strip
RF OUT
J2
PC
C6
100 pF
2137400A
P1-1
P1-3
P1
VCC
GND
1
2
3
PC
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Evaluation Board Layout
1.559" X 1.191"
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