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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
4
GND
3
GND
2
GND
1
RF IN
8
RF OUT
7
GND
6
GND
5
GND
RF2312
LINEAR GENERAL PURPOSE AMPLIFIER
CATV Distribution Amplifiers
Cable Modems
Broadband Gain Blocks
Laser Diode Driver
Return Channel Amplifier
Base Stations
The RF2312 is a general purpose, low cost high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 75
gain block. The gain flatness of
better than 0.5dB from 5MHz to 1000MHz, and the high
linearity, make this part ideal for cable TV applications.
Other applications include IF and RF amplification in
wireless voice and data communication products operat-
ing in frequency bands up to 2500MHz. The device is
self-contained with 75
input and output impedances,
and requires only two external DC biasing elements to
operate as specified.
DC to well over 2500MHz Operation
Internally Matched Input and Output
15dB Small Signal Gain
3.8dB Noise Figure
+20dBm Output Power
Single 5V to 12V Positive Power Supply
RF2312
Linear General Purpose Amplifier
RF2312 PCBA
Fully Assembled Evaluation Board - 75
RF2312 PCBA
Fully Assembled Evaluation Board - 50
3
Rev C2 010813
0.248
0.232
0.200
0.192
0.160
0.152
0.018
0.014
0.050
0.059
0.057
0.010
0.004
-A-
0.0100
0.0076
0.0500
0.0164
8 MAX
0 MIN
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
Package Style: SOIC-8
3-2
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Rev C2 010813
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Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current
125
mA
Input RF Power
+18
dBm
Output Load VSWR
20:1
Ambient Operating Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Maximum Junction Temperature
150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (50
)
T = 25C, V
CC
= 9V, Freq = 900 MHz,
R
C
= 30
, 50
System, P
IN
=-4dBm
Frequency Range
DC to 2500
MHz
3dB Bandwidth
Gain
14.5
15.1
dB
Noise Figure
3.8
4.3
dB
From 50MHz to 300MHz, -30 to +70 C
4.2
4.8
dB
From 300MHz to 1000MHz, -30 to +70 C
Input VSWR
1.7:1
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR
1.4:1
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output IP
3
+40
+42
dBm
At 100MHz
Output IP
3
+33
+36
dBm
At 500MHz
Output IP
3
+30
+33
dBm
At 900MHz
Output P
1dB
+21
+22
dBm
At 100MHz
Output P
1dB
+20
+21
dBm
At 500MHz
Output P
1dB
+17
+18.5
dBm
At 900MHz
Saturated Output Power
+23
dBm
At 100MHz
Saturated Output Power
+22.5
dBm
At 500MHz
Saturated Output Power
+20.5
dBm
At 900MHz
Reverse Isolation
20
dB
Thermal
Theta
JC
66
C/W
P
DISS
= 0.61W, T
AMB
= 85C, T
CASE
=96.6C,
T
J
= 136.8C
No RF Input/Output
Mean Time Between Failures
708x10
6
hours
T
AMB
= +25C
2.75x10
6
hours
T
AMB
= +80C
Power Supply
Device Voltage (V
D
)
6.0
V
On pin 8, I
CC
= 100mA
5.0
V
On pin 8, I
CC
=40mA
Operating Current Range
85
100
115
mA
V
CC
= 9.0V, R
C
=30
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (75
)
T= 25C , V
CC
=9V, Freq = 900 MHz,
R
C
= 30
, 75
System
Frequency Range
DC to 2500
MHz
3dB Bandwidth
Gain
14.5
16
dB
Noise Figure
3.8
4.3
dB
From 50MHz to 300MHz, -30C to +70C.
4.2
4.8
dB
From 300MHz to 1000MHz, -30C to +70C.
Input VSWR
1.3:1
1.4:1
From 50MHz to 900MHz, -30C to +70C.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
Output VSWR
1.25:1
From 50MHz to 300MHz, -30C to +70C.
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain this VSWR at the intended operat-
ing frequency range.
1.4:1
From 300MHz to 500MHz, -30C to +70C.
1.5:1
1.7:1
From 500MHz to 900MHz, -30C to +70C.
Output IP
3
+36
+38
dBm
At 100MHz
Output IP
3
+33
+36
dBm
At 500MHz
Output IP
3
+28
+30
dBm
At 900MHz
Output P
1dB
+21
+22
dBm
At 100MHz
Output P
1dB
+20
+21
dBm
At 500MHz
Output P
1dB
+17
+18.5
dBm
At 900MHz
Saturated Output Power
+23
dBm
At 100MHz
Saturated Output Power
+22.5
dBm
At 500MHz
Saturated Output Power
+20.5
dBm
At 900MHz
Reverse Isolation
20
dB
77 Channels
77 Channels to 550MHz at 10dBmV,
33 channels to 760MHz at 0dBmV flat at
DUT input
CSO
>86
dBc
61.25MHz
>86
dBc
83.25MHz
76
dBc
193.25MHz
72
dBc
313.2625MHz
64
dBc
547.25MHz
CTB
>86
dBc
61.25MHz
>86
dBc
83.25MHz
86
dBc
193.25MHz
84
dBc
313.2625MHz
83
dBc
547.25MHz
CNR
65
66
dB
110 Channels
110 Channels, 10dBmV/channel at input
CSO
>86
dBc
61.25MHz
>86
dBc
83.25MHz
76
dBc
193.25MHz
70
dBc
313.2625MHz
64
dBc
547.25MHz
CTB
84
dBc
61.25MHz
86
dBc
83.25MHz
85
dBc
193.25MHz
81
dBc
313.2625MHz
80
dBc
547.25MHz
Cross Modulation
77
dBc
61.25MHz
74
dBc
445.25MHz
CNR
65
66
dB
3-4
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Rev C2 010813
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Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (75
Push-Pull)
T = 25C, V
CC
=9V or 24V, 75
System,
RF
IN
=-10dBm
Frequency Range
DC to 150
MHz
Gain
15
dB
Noise Figure
5.0
dB
From 5MHz to 150MHz, -30C to +70C.
Input VSWR
1.1:1
Output VSWR
1.2:1
Output IP
2
+71
dBm
At 10MHz
+72
dBm
At 30MHz
+74
dBm
At 50MHz
Output IP
3
+40
dBm
At 10MHz
+40
dBm
At 30MHz
+40
dBm
At 50MHz
Second Harmonic
-73
dBc
At 10MHz
-65
dBc
At 30MHz
-65
dBc
At 50MHz
3-5
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Pin
Function
Description
Interface Schematic
1
RF IN
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking
capacitor, suitable for the frequency of operation, should be used in all
applications. The device has internal feedback, and not using a DC-
blocking capacitor will disable the temperature compensation.The bias
of the device can be controlled by this pin. Adding an optional 1k
resistor to ground on this pin reduces the bias level, which may be com-
pensated for by a higher supply voltage to maintain the appropriate
bias level. The net effect of this is an increased output power capability,
as well as higher linearity for signals with high crest factors. DC-cou-
pling of the input is not allowed, because this will override the internal
feedback loop and cause temperature instability.
2
GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane. Each ground pin should
have a via to the ground plane.
3
GND
Same as pin 2.
4
GND
Same as pin 2.
5
GND
Same as pin 2.
6
GND
Same as pin 2.
7
GND
Same as pin 2.
8
RF OUT
RF output and bias pin. Because DC is present on this pin, a DC-block-
ing capacitor, suitable for the frequency of operation, should be used in
most applications. For biasing, an RF choke in series with a resistor is
needed. The value for the resistor R
C
is 30
(0.5W) for V
CC
= 9V and
21
for V
CC
=8V. The DC voltage on this pin is typically 6.0V with a
current of 100mA. In lower power applications the value of R
C
can be
increased to lower the current and V
D
on this pin.
RF OUT
RF IN
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