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RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
5
4
RF OUT
VCC
GND
GND
RF IN
RF2314
Broadband Gain Blocks
Final PA for Low-Power Applications
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Oscillator Loop Amplifiers
The RF2314 is a general purpose, low-cost, high perfor-
mance amplifier designed for operation from a 2.7 V to 6V
supply with low current consumption. The circuit configu-
ration with resistive feedback allows for broadband cas-
cadable amplification. Feedback with capacitive
compensation extends the bandwidth of the amplifier, and
is designed for optimized noise figure. The device is
unconditionally stable and internally matched to 50
. No
external components are required. The RF2314 is avail-
able in a very small industry-standard SOT-23 5-lead sur-
face mount package, enabling compact designs which
conserve board space.
150MHz to 2500MHz Operation
2.7V to 6.0V Single Supply
+18dBm Output IP
3
at 5V
14dB Gain at 900MHz
8.6dB Gain at 1900MHz
Low Current Consumption of 5mA at 3V
RF2314
General Purpose Low Noise Amplifier
RF2314 PCBA
Fully Assembled Evaluation Board
Rev A3 990216
.071
.059
.020
.014
.118
.102
.083
.067
.010
.004
.051
.039
.004
.000
.008 MIN
.122
.106
1
!" #
4-88
RF2314
Rev A3 990216
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
8.0
V
Supply Current
32
mA
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=27 C, V
CC
=3.0V, Freq=900MHz
Frequency Range
150 to >2500
MHz
NOTE: Lower frequencies can be obtained
with inductive coupling.
3.0V Performance
T=27 C, V
CC
=3.0V, Freq=900MHz
Gain
12.9
dB
16.6
dB
Freq=150MHz
7.9
dB
Freq=1900MHz
Noise Figure
1.4
dB
Output IP3
+9.0
dBm
Output P
1dB
-1.0
dBm
Input Return Loss
10
dB
Output Return Loss
17
dB
Isolation
20
dB
5.0V Performance
T=27 C, V
CC
=5.0V, Freq=900MHz
Gain
14.2
dB
19.1
dB
Freq=150MHz
8.6
dB
Freq=1900MHz
Noise Figure
1.5
dB
Output IP3
+18.0
dBm
Output P
1dB
+8.0
dBm
Input Return Loss
13
dB
Output Return Loss
28
dB
Isolation
20
dB
Power Supply
Operating Voltage
2.7 to 6.0
V
Operating Current
5.7
mA
V
CC
=3.0V
12.5
mA
V
CC
=5.0V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4-89
RF2314
Rev A3 990216
4
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(Download Bill of Materials from www.rfmd.com.)
Pin
Function
Description
Interface Schematic
1
GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
2
GND
Same as pin 1.
3
RF IN
RF input pin. This pin is internally DC blocked and thus does not
require an external blocking capacitor. The input impedance of this pin
is internally matched to 50
using resistive feedback.
4
VCC
Supply connection. Generally, there is no need for an external bypass
capacitor.
See pin 3 schematic.
5
RF OUT
RF output pin. The output impedance of this pin is internally matched to
50
using resistive feedback.
See pin 3 schematic.
RF IN
RF OUT
300
VCC
1
2
3
5
4
RF IN
RF OUT
V
CC
1
2
3
5
4
50
strip
50
strip
RF OUT
J2
RF IN
J1
P1-1
NC
P1
VCC
GND
1
2
3
P1-1
C2
560 pF
C1
6.8
F
+
2314400-
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