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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
RF IN
GND
GND
GND
RF OUT
GND
GND
GND
RF2318
LINEAR BROADBAND AMPLIFIER
CATV Amplifiers
Cable Modems
Broadband Gain Blocks
Return Channel Amplifier
Base Stations
The RF2318 is a broadband general purpose, low cost
high linearity RF amplifier IC. The device is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use
as an easily cascadable 75
gain block. The gain flat-
ness of better than 1.0dB from 5MHz to 1000MHz, and
the high linearity, make this part ideal for cable TV appli-
cations. Other applications include IF and RF amplifica-
tion in wireless voice and data communication products
operating in frequency bands up to 5000 MHz. The device
is self-contained with 75
input and output impedances,
and requires only two external DC biasing elements to
operate as specified.
DC to over 5000MHz Operation
Internally Matched Input and Output
8dB Small Signal Gain
6dB Noise Figure
+18dBm Output Power
Single 9V to 12V Positive Power Supply
RF2318
Linear Broadband Amplifier
RF2318 PCBA-L
Fully Assembled Evaluation Board (DC to 3GHz)
RF2318 PCBA-H Fully Assembled Evaluation Board (3GHz to 6GHz)
3
Rev A2 010228
.156
.152
.022
.018
5
.056
.052
.195
.191
.240
.232
.050
.008
.004
MIN
.017
1
Package Style: SOP-8
Preliminary
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RF2318
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Absolute Maximum Ratings
Parameter
Rating
Unit
Device Current
70
mA
Input RF Power
+13
dBm
Output Load VSWR
20:1
Ambient Operating Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (50
)
T = 27C, V
CC
= 9V, Icc=60mA, R
C
=30
Frequency Range
DC to 5000
MHz
1dB Bandwidth
Gain
8
8
9
dB
From 10MHz to 1000MHz
8
9
10
dB
From 1000MHz to 2000MHz
10
11
12
dB
From 2000MHz to 5000MHz
Noise Figure
6
dB
From 50MHz to 300MHz, -30C to +70C
6
dB
From 300MHz to 1000MHz, -30C to +70C
Input VSWR
1.6:1
1.9:1
From 10MHz to 1800MHz
1.4:1
From 1800MHz to 5000MHz
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain these VSWRs at the intended oper-
ating frequency range.
Output VSWR
2.0:1
3.0:1
From 10MHz to 1800MHz
1.9:1
From 1800MHz to 4000MHz
3.0:1
From 4000MHz to 5000MHz
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain these VSWRs at the intended oper-
ating frequency range.
Output IP
2
+50
dBm
Tones at 500MHz and 900MHz
Output IP
3
+30
dBm
At 100MHz
+33
+35
dBm
At 500MHz
+30
+33
dBm
At 900MHz
Output P
1dB
TBD
dBm
At 100MHz
TBD
dBm
At 500MHz
TBD
dBm
At 900MHz
Saturated Output Power
TBD
dBm
At 100MHz
Saturated Output Power
18
dBm
At 500MHz
Saturated Output Power
TBD
dBm
At 900MHz
Reverse Isolation
15
dB
From 30MHz to 4000MHz
20
dB
From 4000MHz to 5000MHz
Power Supply
Device Voltage (V
D
)
7.0
V
On pin 8, I
CC
=63mA
6.5
V
On pin 8, I
CC
=49mA
Operating Current Range
63
65
mA
V
D
= 7.0V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Preliminary
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RF2318
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Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall (75
)
T= 25C , V
CC
= 9V, Icc=63mA, R
C
= 30
,
75
System
Frequency Range
DC to 5000
MHz
1dB Bandwidth
Gain
8
dB
Noise Figure
6
dB
From 30MHz to 2000MHz, -30C to +70C
Input VSWR
1.3:1
From 30MHz to 2000 MHz, -30C to +70C
1.4:1
From 2000MHz to 4000MHz
1.6:1
From 4000MHz to 5000MHz
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain these VSWRs at the intended oper-
ating frequency range.
Output VSWR
2.0:1
From 30MHz to 1000MHz, -30C to +70C
2.6:1
From 1000MHz to 5000MHz
Appropriate values for the DC blocking
capacitors and bias inductor are required to
maintain these VSWRs at the intended oper-
ating frequency range.
Output IP
2
+54
dBm
Tones at 500MHz and 900MHz
Output IP
3
TBD
dBm
At 100MHz
+36
+37
dBm
At 500MHz
TBD
dBm
At 900MHz
Output P
1dB
TBD
dBm
At 100MHz
18
dBm
At 500MHz
18
dBm
At 900MHz
Saturated Output Power
TBD
dBm
At 100MHz
19
dBm
At 500MHz
18.5
dBm
At 900MHz
Reverse Isolation
15
dB
From 30MHz to 4000MHz
20
dB
From 4000MHz to 5000MHz
CSO
TBD
dB
77 Channels, 36dBmV output/channel
TBD
dB
110 Channels, 36dBmV output/channel
CTB
TBD
dB
77 Channels, 36dBmV output/channel
TBD
dB
110 Channels, 36dBmV output/channel
Cross Modulation
TBD
dB
77 Channels, 36dBmV output/channel
TBD
dB
110 Channels, 36dBmV output/channel
Preliminary
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RF2318
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Application Schematic
Pin
Function
Description
Interface Schematic
1
RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in all
applications. The device has internal feedback, and not using a DC
blocking capacitor will disable the temperature compensation.The bias
of the device can be controlled by this pin. Adding an optional 1k
resistor to ground on this pin reduces the bias level, which may be com-
pensated for by a higher supply voltage to maintain the appropriate
bias level. The net effect of this is an increased output power capability,
as well as higher linearity for signals with high crest factors. DC cou-
pling of the input is not allowed, because this will override the internal
feedback loop and cause temperature instability.
2
GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance. Each ground pin should
have a via to the ground plane.
3
GND
Same as pin 2.
4
GND
Same as pin 2.
5
GND
Same as pin 2.
6
GND
Same as pin 2.
7
GND
Same as pin 2.
8
RF OUT
RF output and bias pin. Because DC is present on this pin, a DC block-
ing capacitor, suitable for the frequency of operation, should be used in
most applications. For biasing, an RF choke in series with a resistor is
needed. The value for the resistor R
C
is 30
(0.5W) for V
CC
= 9V and
82
for V
CC
= 12V. The DC voltage on this pin is typically 7V with a cur-
rent of 63mA. In lower power applications the value of R
C
can be
increased to lower the current and V
D
on this pin.
RF OUT
RF IN
1
2
3
4
8
7
6
5
220 pF
RF OUT
220 pF
RF IN
3.3
H
R
C
= 30 - 82
V
CC
= 9 - 12 V
Optional:
R
S
=1 - 2 k
Note 1
Note 1:
Optional resistor Rs can be used to maintain the correct bias level at higher supply voltages. This
is useful to increase output capability or linearity for signals with high crest factors.
Preliminary
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RF2318
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Evaluation Board Schematic - DC to 3GHz
(Download Bill of Materials from www.rfmd.com.)
Evaluation Board Schematic - 3GHz to 6GHz
1
2
3
4
8
7
6
5
C1
1 nF
50
strip
J1
RF IN
C2
1 nF
50
strip
J2
RF OUT
L1
3.3 uH
R7
120
R8
120
R9
120
R10
120
C4
10 nF
C3
1 uF
VCC
2318400-
P1-1
VCC
GND
GND
P1
1
2
3
CON3
1
2
3
4
8
7
6
5
C1
8 pF
50
strip
J1
RF IN
C2
8 pF
50
strip
J2
RF OUT
L1
22 nH
R7
120
R8
120
R9
120
R10
120
C4
10 nF
C3
1 uF
VCC
2318401-
P1-1
VCC
GND
GND
P1
1
2
3
CON3
Preliminary
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RF2318
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Evaluation Board Layout - DC to 3GHz
Board Size 1.233" x 1.145"
Board Thickness 0.031", Board Material FR-4
Evaluation Board Layout - 3GHz to 6GHz
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