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Preliminary
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
5
4
RF OUT
VCC
GND
GND
RF IN
RF2321
Broadband Gain Blocks
Final PA for Low-Power Applications
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Oscillator Loop Amplifiers
The RF2321 is a general purpose, low-cost silicon ampli-
fier designed for operation from a 3V supply. The circuit
configuration with resistive feedback allows for broadband
cascadable amplification. Capacitive compensation
extends the bandwidth of the amplifier and input stage
design optimizes noise figure. The device is uncondition-
ally stable and internally matched to 50
. The only exter-
nal components required for specified performance are
bypass and DC blocking capacitors (as shown in applica-
tion schematic). The RF2321 is available in a very small
industry-standard SOT-23 5-lead surface mount package,
enabling compact designs which conserve board space.
DC to >2000MHz Operation
2.7V to 3.3V Single Supply
+3dBm Output IP3
12dB Gain at 900MHz
12dB Gain at 1900MHz
High Isolation (36dB at 900MHz)
RF2321
3V General Purpose Amplifier
RF2321 PCBA
Fully Assembled Evaluation Board
Rev A3 000713
.071
.059
.020
.014
.118
.102
.083
.067
.010
.004
.051
.039
.004
.000
.008 MIN
.122
.106
1
!" #
Preliminary
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RF2321
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
4.0
V
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=27 C, V
CC
=3.0V
Frequency Range
DC to >2000
MHz
100MHz Performance
T=27 C, V
CC
=3.0V
Gain
12
dB
Noise Figure
3.6
dB
Output IP3
4
dBm
Output P
1dB
-8
dBm
Input Return Loss
15
dB
Output Return Loss
11
dB
Isolation
52
dB
500MHz Performance
T=27 C, V
CC
=3.0V
Gain
12
dB
Noise Figure
3.8
dB
Output IP3
4
dBm
Output P
1dB
-8
dBm
Input Return Loss
15
dB
Output Return Loss
11
dB
Isolation
42
dB
900MHz Performance
T=27 C, V
CC
=3.0V
Gain
12
dB
Noise Figure
3.7
dB
Output IP3
3
dBm
Output P
1dB
-7
dBm
Input Return Loss
13
dB
Output Return Loss
9
dB
Isolation
36
dB
1000 MHz Performance
T=27 C, V
CC
=3.0V
Gain
12
dB
Noise Figure
3.7
dB
Output IP3
3
dBm
Output P
1dB
-8
dBm
Input Return Loss
13
dB
Output Return Loss
9
dB
Isolation
35
dB
2000 MHz Performance
T=27 C, V
CC
=3.0V
Gain
12
dB
Noise Figure
4.5
dB
Output IP3
2
dBm
Output P
1dB
-8
dBm
Input Return Loss
8
dB
Output Return Loss
9
dB
Isolation
25
dB
Power Supply
Operating Voltage
3.010%
V
Operating Current
7.7
mA
V
CC
=3.0V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Preliminary
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(Download Bill of Materials from www.rfmd.com.)
Pin
Function
Description
Interface Schematic
1
GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
2
GND
Same as pin 1.
3
RF IN
RF input pin. This pin is not internally DC blocked and thus requires an
external blocking capacitor suitable for the frequency of operation. The
input impedance of this pin is internally matched to 50
using resistive
feedback.
4
VCC
Supply connection. This pin should be bypassed with a suitable capac-
itor(s).
5
RF OUT
RF output and bias pin. The output impedance of this pin is internally
matched to 50
using resistive feedback. Because DC biasing is
present on this pin, a DC blocking capacitor should be used in most
applications (see application schematic).
See pin 3 schematic.
RF IN
RF OUT
VCC
1
2
3
5
4
100 pF
100 pF
RF IN
RF OUT
V
CC
1 nF
1
2
3
5
4
C2
100 pF
C1
100 pF
50
strip
50
strip
RF OUT
J2
RF IN
J1
P1-1
NC
P1
VCC
GND
1
2
3
P1-1
C3
1 nF
Preliminary
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Preliminary
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0
1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
RF2321 S22, Vcc = 2.7 V, Temp= 25C
Swp Max
3.1GHz
Swp Min
0.1GHz
0
1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
RF2321 S22, Vcc = 2.7 V, Temp= 25C
Swp Max
3.1GHz
Swp Min
0.1GHz
0
1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
RF2321 S11, Vcc = 2.7 V, Temp = 25C
Swp Max
3.1GHz
Swp Min
0.1GHz
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2321 S12, Vcc = 2.7 V
-60
-50
-40
-30
-20
S12 (dB)
Temp = 25C
Temp = 80C
Temp = -40C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2321 Input VSWR, Vcc = 2.7 V
1
1.5
2
2.5
3
VSWR
Temp = 80C
Temp = -40C
Temp = 25C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2321 Output VSWR, Vcc = 2.7 V
0
1
2
3
4
VSWR
Temp = 25C
Temp = -40C
Temp = 80C
3.1GHz
100MHz
3.1GHz
100MHz
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2321 S21, Vcc= 2.7 V
0
2
4
6
8
10
12
14
16
Gain (dB)
Temp = 25C
Temp = 80C
Temp = -40C
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