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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
5
4
RF OUT
GND
GND
GND
RF IN
RF2326
3V GENERAL PURPOSE AMPLIFIER
Broadband Gain Blocks
Final PA for Low-Power Applications
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Oscillator Loop Amplifiers
The RF2326 is a general purpose, low-cost silicon ampli-
fier designed for operation from a 3 V supply. The Darling-
ton circuit configuration with resistive feedback allows for
broadband cascadable amplification. The device is
unconditionally stable and internally matched to 50
. The
only external components required for specified perfor-
mance are bypass and DC blocking capacitors and two
bias elements (as shown in application schematic). The
RF2326 is available in a very small industry-standard
SOT-23 5-lead surface mount package, enabling compact
designs which conserve board space.
DC to >2000MHz Operation
2.7V to 3.3V Single Supply
+18dBm Output IP3
12dB Gain at 900MHz
10dB Gain at 1900MHz
Internally 50
Matched Input and Output
RF2326
3V General Purpose Amplifier
RF2326 PCBA
Fully Assembled Evaluation Board
4
Rev A4 010720
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3 MAX
0 MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT 5-Lead
Preliminary
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
4.0
V
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=27 C, V
CC
= 3.0V
Frequency Range
DC to >2000
MHz
100MHz Performance
T=27 C, V
CC
= 3.0V
Gain
12
dB
Noise Figure
5.9
dB
Output IP3
19
dBm
Output P
1dB
7
dBm
Input Return Loss
13
dB
Output Return Loss
13
dB
Isolation
18
dB
500MHz Performance
T=27 C, V
CC
= 3.0V
Gain
13
dB
Noise Figure
5.9
dB
Output IP3
19
dBm
Output P
1dB
8
dBm
Input Return Loss
15
dB
Output Return Loss
27
dB
Isolation
17
dB
900MHz Performance
T=27 C, V
CC
= 3.0V
Gain
10.6
12
13.5
dB
Noise Figure
5.7
dB
Output IP3
18
dBm
Output P
1dB
7
dBm
Input Return Loss
12
dB
Output Return Loss
21
dB
Isolation
18
dB
1000 MHz Performance
T=27 C, V
CC
= 3.0V
Gain
12
dB
Noise Figure
5.8
dB
Output IP3
17
dBm
Output P
1dB
6
dBm
Input Return Loss
11
dB
Output Return Loss
20
dB
Isolation
18
dB
2000 MHz Performance
T=27 C, V
CC
= 3.0V
Gain
10
dB
Noise Figure
5.8
dB
Output IP3
13
dBm
Output P
1dB
4
dBm
Input Return Loss
9
dB
Output Return Loss
16
dB
Isolation
18
dB
Power Supply
Operating Voltage
3.010%
V
Operating Current
24.6
25
28.7
mA
V
CC
= 3.0V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Preliminary
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Application Schematic
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Pin
Function
Description
Interface Schematic
1
GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
2
GND
Same as pin 1.
3
RF IN
RF input pin. This pin is not externally DC blocked and thus requires an
external blocking capacitor suitable for the frequency of operation. The
input impedance of this pin is internally matched to 50
using resistive
feedback.
4
GND
Same as pin 1.
5
RF OUT
RF output and bias pin. The input impedance of this pin is internally
matched to 50
using resistive feedback. Bias should be supplied to
this pin through an external series resistor and RF choke inductor.
Because DC biasing is present on this pin, a DC blocking capacitor
should be used in most applications (see application schematic). The
supply side of the bias network should be well-bypassed.
See pin 3 schematic.
RF OUT
RF IN
1
2
3
5
4
100 pF
100 pF
RF IN
RF OUT
120 nH
36
V
CC
1 nF
1
2
3
5
4
C2
100 pF
C1
100 pF
L2
120 nH
R1
36
C5
1 nF
50
strip
50
strip
RF OUT
J2
RF IN
J1
P1-1
P1-1
NC
P1
VCC
GND
1
2
3
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Evaluation Board Layout
1" x 1"
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0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 S21, Vcc= 2.7 V
0
2
4
6
8
10
12
14
16
Gain
(
d
B
)
Temp = 25C
Temp = 80C
Temp = -40C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 S12, Vcc = 2.7 V
-19
-18
-17
-16
-15
S1
2
(
d
B
)
Temp = 25C
Temp = 80C
Temp = -40C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 Input VSWR, Vcc = 2.7 V
1
1.5
2
2.5
3
VSWR
Temp = 80C
Temp = -40C
Temp = 25C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 Output VSWR, Vcc = 2.7 V
0
1
2
3
4
VSWR
Temp = 25C
Temp = 80C
Temp = -40C
0
1.
0
1.
0
-1
.
0
10.
0
10.0
-1
0.0
5.
0
5.0
-5
.0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.0
-4
.0
0.
2
0.2
-0.2
0.
4
0.
4
-0
.4
0.
6
0
.6
-0
.6
0.
8
0
.8
-0
.8
RF2326 S11, Vcc = 2.7 V, Temp = 25C
Swp Max
3.1GHz
Swp Min
0.1GHz
0
1.
0
1.
0
-1
.
0
10.
0
10.0
-1
0.0
5.
0
5.0
-5
.0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.0
-4
.0
0.
2
0.2
-0.2
0.
4
0.
4
-0
.4
0.
6
0
.6
-0
.6
0.
8
0
.8
-0
.8
RF2326 S22, Vcc = 2.7 V, Temp= 25C
Swp Max
3.1GHz
Swp Min
0.1GHz
3.1GHz
100MHz
3.1GHz
100MHz
Preliminary
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0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 S21, Vcc= 3.0 V
0
2
4
6
8
10
12
14
16
Gain
(
d
B
)
Temp = 25C
Temp = 80C
Temp = -40C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 Input VSWR, Vcc = 3.0 V
1
1.5
2
2.5
3
VSWR
Temp = 25C
Temp = 80C
Temp = -40C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 Output VSWR, Vcc = 3.0 V
0
1
2
3
4
VSWR
Temp = 25C
Temp = 80C
Temp = -40C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 S12, Vcc = 3.0 V
-19
-18
-17
-16
-15
S1
2
(
d
B
)
30v25c
30v80c
30vn40c
0
1.
0
1.
0
-1
.
0
10.
0
10.0
-1
0.0
5.
0
5.0
-5
.0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.0
-4
.0
0.
2
0.2
-0.2
0.
4
0.
4
-0
.4
0.
6
0
.6
-0
.6
0.
8
0
.8
-0
.8
RF2326 S11, Vcc = 3.0 V, Temp = 25C
Swp Max
3.1GHz
Swp Min
0.1GHz
0
1.
0
1.
0
-1
.
0
10.
0
10.0
-1
0.0
5.
0
5.0
-5
.0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.0
-4
.0
0.
2
0.2
-0.2
0.
4
0.
4
-0
.4
0.
6
0
.6
-0
.6
0.
8
0
.8
-0
.8
RF2326 S22, Vcc = 3.0 V, Temp= 25C
Swp Max
3.1GHz
Swp Min
0.1GHz
3.1GHz
100MHz
3.1GHz
100MHz
Preliminary
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0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 S21, Vcc= 3.3 V
0
2
4
6
8
10
12
14
16
Gain
(
d
B
)
Temp = 25C
Temp = 80C
Temp = -40C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 S12, Vcc = 3.3 V
-19
-18
-17
-16
-15
S1
2
(
d
B
)
Temp = 25C
Temp = 80C
Temp = -40C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 Input VSWR, Vcc = 3.3 V
1
1.5
2
2.5
3
VSWR
Temp = 80C
Temp = -40C
Temp = 25C
0.1
1.1
2.1
3.1
Frequency (GHz)
RF2326 Output VSWR, Vcc = 3.3 V
0
1
2
3
4
VSWR
Temp = 25C
Temp = 80C
Temp = -40C
0
1.
0
1.
0
-1
.
0
10.
0
10.0
-1
0.0
5.
0
5.0
-5
.0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.0
-4
.0
0.
2
0.2
-0.2
0.
4
0.
4
-0
.4
0.
6
0
.6
-0
.6
0.
8
0
.8
-0
.8
RF2326 S11, Vcc = 3.3 V, Temp = 25C
Swp Max
3.1GHz
Swp Min
0.1GHz
0
1.
0
1.
0
-1
.
0
10.
0
10.0
-1
0.0
5.
0
5.0
-5
.0
2.
0
2.
0
-2
.0
3.
0
3.
0
-3
.0
4.
0
4.0
-4
.0
0.
2
0.2
-0.2
0.
4
0.
4
-0
.4
0.
6
0
.6
-0
.6
0.
8
0
.8
-0
.8
RF2326 S22, Vcc = 3.3 V, Temp= 25C
Swp Max
3.1GHz
Swp Min
0.1GHz
3.1GHz
100MHz
3.1GHz
100MHz
Preliminary
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