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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
13
12
11
10
9
RF IN
NC
VREF
RF OUT
VCC
ATT OUT2
8
16
14
15
PD
AT
T
O
U
T
1
NC
AT
T
I
N
GN
D
GN
D
NC
RF
G
N
D
NC
NC
1
2
3
4
5
7
6
RF2352
3V CDMA DRIVER AMPLIFIER
TDMA/CDMA/FM Driver Amplifier
Low Noise Transmit Driver Amplifier
General Purpose Amplification
Commercial and Consumer Systems
The RF2352 is a low noise driver amplifier for 900MHz
CDMA/AMPS applications. The device is designed for
operation from 2.7 V to 3.6 V, and features selectable high
and low gain modes. In high gain mode, the device will
provide about 19dB of gain, and the linearity and current
drain are set with an external resistor, allowing the
designer to select the optimum performance for a given
application. In the low gain, or "bypass" mode, the gain is
controlled by an external attenuator network, and the
device draws essentially no current. The part is fabricated
using a high performance silicon BiCMOS process, and is
packaged in a 4mmx4mm, 16-pin, leadless chip carrier.
Low Noise and High Intercept Point
Power Down Control
Gain Control
Single 2.7V to 3.6V Power Supply
Extremely Small MLF16 Package
RF2352
3V CDMA Driver Amplifier
RF2352 PCBA
Fully Assembled Evaluation Board
4
Rev A4 010720
3.75
3.75
+
1.50 SQ
4.00
4.00
1
0.45
0.28
3.20
1.60
0.75
0.50
12
INDEX AREA 3
1.00
0.90
0.75
0.65
0.05
0.00
NOTES:
5
Package Warpage: 0.05 max.
4
Pins 1 and 9 are fused.
Shaded Pin is Lead 1.
1
Dimension applies to plated terminal and is measured between
0.10 mm and 0.25 mm from terminal tip.
2
The terminal #1 identifier and terminal numbering convention
shall conform to JESD 95-1 SPP-012. Details of terminal #1
identifier are optional, but must be located within the zone
indicated. The identifier may be either a mold or marked
feature.
3
0.80
TYP
2
1
Package Style: LCC, 16-Pin, 4x4
Preliminary
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RF2352
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +4.5
V
DC
Input RF Level
0
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
V
CC
= 3.0V, T = 25C, External Matching
Components Required.
High Gain Mode
V
PD
= 2.8V, P
OUT
=+4dBm, I
CC
= 15mA
Gain
18
20
22
dB
At 824MHz
Noise Figure
1.9
2.9
dB
Input VSWR
1.3
1.5
Output VSWR
1.6
1.8
Adjacent Channel Power
Rejection (ACPR1)
57
60
dBc
900kHz offset
Alternate Channel Power
Rejection (ACPR2)
78
80
dBc
1.98MHz offset
Gain
17
19
21
dB
At 874MHz
Noise Figure
2.0
3.0
dB
Input VSWR
1.6
1.8
Output VSWR
1.5
1.7
Adjacent Channel Power
Rejection (ACPR1)
58
60
dBc
900kHz offset
Alternate Channel Power
Rejection (ACPR2)
76
77
dBc
1.98MHz offset
Gain
16.5
18.5
20.5
dB
At 925MHz
Noise Figure
2.2
3.2
dB
Input VSWR
1.8
2.0
Output VSWR
1.4
1.6
Adjacent Channel Power
Rejection (ACPR1)
57
60
dBc
900kHz offset
Alternate Channel Power
Rejection (ACPR2)
76
77
dBc
1.98MHz offset
Bypass (Low Gain) Mode
V
PD
= 0V, Pins 6 and 8 shorted.
Gain
-4.2
dB
At 824MHz
Noise Figure
4.2
dB
Input VSWR
1.2
1.4
Output VSWR
1.4
1.6
Gain
-3.7
dB
At 874MHz
Noise Figure
3.7
dB
Input VSWR
1.4
1.6
Output VSWR
1.3
1.5
Gain
-4.7
dB
At 925MHz
Noise Figure
4.7
dB
Input VSWR
1.5
1.7
Output VSWR
1.4
1.6
Power Supply
Power Supply Range (V
CC
)
2.7
3.0
3.6
V
Current Drain (I
CC
)
15.0
mA
V
PD
= 2.8V (High Gain Mode)
Current Drain (I
CC
)
10
A
V
PD
= 0V (Bypass Mode)
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Preliminary
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RF2352
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Pin
Function
Description
Interface Schematic
1
GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2
RF IN
RF input pin. It is DC-coupled and looks like 50
from 824MHz to
925MHz.
3
NC
Not connected.
4
VREF
Provides the bias voltage for controlling the RF amplifier current drain.
This pin is typically connected through a resistor to an external regu-
lated power supply. It may be connected to the same power supply as
the VCC pin. However, if more bias control is desired, it may be con-
nected to a separate supply. With a series external resistor of 1500
and power supply of 3V applied, the amplifier current drain should be
around 14mA. By increasing the resistor, the amplifier current drain
may be dropped. Conversely, by decreasing the resistor, the amplifier
current may be increased to a maximum of 30mA.
5
PD
Power down function. When 0V to 0.5V is applied, the device is in
Bypass Mode: the amplifier is shut off and the MOSFET switches are
activated. There is no DC current dissipation in this state. When 1.5V to
3V is applied, the device is switched to High Gain Mode: the amplifier is
activated and the MOSFET switches are opened. This is the normal
operating mode.
6
ATT OUT1
Output of the first MOSFET switch. DC-coupled. When the PD pin is
grounded (Bypass Mode), the MOSFET switches are shorted, sending
any signals at the RF IN pin through the first MOSFET and off the chip.
In cases where minimum RF attenuation is desired, this pin should be
shorted with 50
microstrip to the ATT IN pin. This setup will yield
approximately 4dB of insertion loss. If more attenuation is desired, a
resistive pad between the ATT OUT1 and ATT IN pins can be added to
the PC board.
7
NC
Not connected.
8
ATT IN
Input to the second MOSFET switch. DC-coupled. When the PD pin is
grounded (Bypass Mode), the MOSFET switches are shorted. See the
ATT OUT1 pin description for setup options.
9
GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
10
ATT OUT2
Output of the second MOSFET switch. DC-coupled. When the PD pin
is grounded (Bypass Mode), the MOSFET switches are shorted. This
pin should be shorted with 50
microstrip to the amplifier load.
11
VCC
Provides the power supply to the logic circuitry on the IC.
12
RF OUT
Amplifier output pin. An open collector output that needs VCC applied
to it through an inductor. Typically, a shunt inductor, series capacitor
matching network is used to provide a 50
output match.
13
NC
Not connected.
14
NC
Not connected.
15
RF GND
Amplifier ground. For best performance, keep traces physically short
and connect immediately to ground plane.
16
NC
Not connected.
Pkg
Base
GND
Ground connection for die flag. The backside of the package should be
soldered to a top side ground pad which is connected to the ground
plane with multiple vias.
RF OUT
RF IN
Bias
VREF
PD
RF IN
ATT OUT1
ATT OUT2
ATT IN
Preliminary
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RF2352
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Application Schematic
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
22 nF
1500
1 nF
1 nF
MODE SELECT
10 nH
1 nF
4 pF
50
strip
1 nF
50
strip
Package base serves as die flag ground. The vias
connecting the backside of the board should be
large in diameter to allow for easier soldering.
13
12
11
10
9
8
16
14
15
1
2
3
4
5
7
6
RF IN
V
CC
V
CC
RF OUT
V
CC
C1
22 nF
50
strip
J1
RF IN
R1
1500
C2
1 nF
VREF
C3
1 nF
PD
R2*
0
R4*
0
50
strip
L1
10 nH
VCC
C6
1 nF
C5
4 pF
50
strip
J2
RF OUT
VCC
C4
1 nF
50
strip
PD
GND
VREF
P1
1
2
3
CON3
NC
GND
VCC
P2
1
2
3
CON3
* R2, R3 and R4 form a "Tee" attenuator network which
determines the gain in the bypass mode. Evaluation
boards are shipped with R2 and R4 as 0
jumpers, and
R3 omitted. This configuration provides the maximum
gain (about -4 dB) available in bypass mode.
13
12
11
10
9
8
16
14
15
1
2
3
4
5
7
6
2352400-
R3*
*
OMIT
Package base serves as die flag ground. The vias
connecting the backside of the board should be large in
diameter to allow for easier soldering.
Preliminary
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Evaluation Board Layout
Board Size 2.0" x 2.0"
Board Thickness 0.031"; Board Material FR-4
Preliminary
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ACPR1 versus I
CC
V
CC
=3V, V
PD
=2.8V, Temperature=26C, P
OUT
=4dBm
-70.0
-68.0
-66.0
-64.0
-62.0
-60.0
-58.0
-56.0
-54.0
-52.0
-50.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
28.0
I
CC
(mA)
ACPR1
(
dB)
824 MHz
874 MHz
925MHz
ACPR2 versus I
CC
V
CC
=3V, V
PD
=2.8V, Temperature=26C, P
OUT
=4dBm
-90.0
-88.0
-86.0
-84.0
-82.0
-80.0
-78.0
-76.0
-74.0
-72.0
-70.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
26.0
28.0
I
CC
(mA)
ACPR2
(
dB)
824 MHz
874 MHz
925 MHz
Gain versus V
CC
I
CC
=15mA, V
PD
=2.8V, Temperature=25C, POUT=4dBm
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
V
CC
(V)
Gain
(dB)
824 MHz
874 MHz
925 MHz
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