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Электронный компонент: RF2361PCBA-D

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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
RF IN
2
GND1
3
VPD
5
GND2
4
RF OUT
RF2361
3V LOW NOISE AMPLIFIER/
3V PA DRIVER AMPLIFIER
TDMA/CDMA/FM Cellular PCS LNA
Low Noise Transmit Driver Amplifier
General Purpose Amplification
Commercial and Consumer Systems
The RF2361 is a low noise amplifier with a very high
dynamic range designed for digital cellular applications.
The device functions as an outstanding front end low
noise amplifier or power amplifier driver amplifier in the
transmit chain of digital subscriber units where low trans-
mit noise power is a concern. When used as an LNA, the
bias current can be set externally. When used as a PA
driver, the IC can operate directly from a single cell Li-ion
battery and includes a power down feature that can be
used to completely turn off the device. The IC is featured
in a standard SOT 5-lead plastic package.
Low Noise and High Intercept Point
Adjustable Bias Current
Power Down Control
Single 2.5V to 6.0V Power Supply
150MHz to 2500MHz Operation
Extremely Small SOT 5-Lead Package
RF2361
3V Low Noise Amplifier/ 3V PA Driver Amplifier
RF2361 PCBA-D Fully Assembled Evaluation Board (Driver)
RF2361 PCBA-L
Fully Assembled Evaluation Board (LNA)
4
Rev A7 001201
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3 MAX
0 MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT 5-Lead
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage, V
CC
-0.5 to +8.0
V
DC
Power Down Voltage, V
PD
<V
CC
V
DC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
RF Frequency Range
150 to 2500
MHz
Low Noise Amplifier
881MHz Performance
Schematic per LNA Application;
T = 25C, RF= 881MHz, V
PD
= 2.8V,
R1=1k
Gain
19.5
20
dB
V
CC
= 3.0V, I
CC
= 7.6mA
19.5
20
dB
V
CC
= 2.7V, I
CC
= 7.5mA
Noise Figure
1.4
1.6
dB
V
CC
= 3.0V, I
CC
= 7.6mA
1.4
1.6
dB
V
CC
= 2.7V, I
CC
= 7.5mA
Input IP3
+ 6.0
dBm
V
CC
= 3.0V, I
CC
= 7.6mA
+5.5
dBm
V
CC
= 2.7V, I
CC
= 7.5mA
Low Noise Amplifier
1950 MHz Performance
Schematic per LNA Application;
T = 25C, RF= 1950MHz, V
PD
= 2.8V,
R1=1k
Gain
12.5
13
dB
V
CC
= 3.0V, I
CC
= 6.4mA
12.5
13
dB
V
CC
= 2.7V, I
CC
= 6.3mA
Noise Figure
1.3
1.5
dB
V
CC
= 3.0V, I
CC
= 6.4mA
1.3
1.5
dB
V
CC
= 2.7V, I
CC
= 6.3mA
Input IP3
+16.5
dBm
V
CC
= 3.0V, I
CC
= 6.4mA
+16.0
dBm
V
CC
= 2.7V, I
CC
= 6.3mA
Driver Amplifier
836MHz Performance
Schematic per Driver Amplifier Application;
T = 25C, RF= 836MHz, V
PD
= 2.8V
Gain
19.5
20.5
21.5
dB
V
CC
= 3.5V
19.5
20.5
21.5
dB
V
CC
= 3.0V
19.5
20.5
21.5
dB
V
CC
= 2.7V
Output IP3
25
+32.0
35
dBm
V
CC
= 3.5V
+29.0
dBm
V
CC
= 3.0V
+27.8
dBm
V
CC
= 2.7V
Noise Figure
1.9
2.0
dB
V
CC
= 3.5V
1.85
2.0
dB
V
CC
= 3.0V
1.8
2.0
dB
V
CC
= 2.7V
Reverse Isolation
25
dB
V
CC
= 3.5V
25
dB
V
CC
= 3.0V
25
dB
V
CC
= 2.7V
Input VSWR
1.8:1
2.0:1
Output VSWR
1.25:1
2.0:1
Using External LC network used on evalua-
tion board.
P
1dB
13
14.4
dBm
V
CC
= 3.5V
12
12.5
dBm
V
CC
=3.0V
10.5
11.5
dBm
V
CC
=2.7V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Power Supply
T = 25 C
Voltage (V
CC
)
2.5 to 6.0
V
Voltage (V
PD
)
2.7
2.8
2.9
V
Current Consumption -
Driver Amplifier
12.5
21.5
27
mA
V
CC
= 3.5V; V
PD
= 2.8V; V
PD
+ V
CC
- Current
Consumption from V
PD
is 2.0mA Typ. @
V
PD
= 2.8V and 3.0mA Max @ V
PD
= 2.9 V
18
20
22
mA
V
CC
= 3.5V; V
PD
= 2.7V; V
PD
+ V
CC
19
23
29
mA
V
CC
= 3.5V; V
PD
= 2.9V; V
PD
+ V
CC
Power Down
10
A
V
CC
= 3.5V; V
PD
0.9 V
Driver Amplifier
1880MHz Performance
Schematic per Driver Amplifier Application;
T= 25C, RF = 1880MHz, V
PD
= 2.8V
Gain
13.0
14.0
14.5
dB
V
CC
= 3.5V
13.0
14.0
14.5
dB
V
CC
= 3.0V
13.0
14.0
14.5
dB
V
CC
= 2.7V
Output IP3
27
+35.0
38
dBm
V
CC
= 3.5V
+31.0
dBm
V
CC
= 3.0V
+28.8
dBm
V
CC
= 2.7V
Noise Figure
1.85
2.0
dB
V
CC
= 3.5V
1.8
2.0
dB
V
CC
= 3.0V
1.75
2.0
dB
V
CC
= 2.7V
Reverse Isolation
19
dB
V
CC
= 3.5V
19
dB
V
CC
= 3.0V
19
dB
V
CC
= 2.7V
Input VSWR
1.6:1
2.0:1
Output VSWR
1.6:1
2.0:1
Using External LC network used on evalua-
tion board.
P
1dB
14
15.6
dBm
V
CC
= 3.5V
13
14.1
dBm
V
CC
= 3.0V
12
13.1
dBm
V
CC
= 2.7V
Power Supply
T = 25 C
Voltage (V
CC
)
2.5 to 6.0
V
Voltage (V
PD
)
2.7
2.8
2.9
V
Current Consumption -
Driver Amplifier
11.5
19.5
25.5
mA
V
CC
= 3.5V; V
PD
= 2.8V; V
PD
+ V
CC
- Current
Consumption from V
PD
is 2.0mA Typ.@
V
PD
= 2.8V and 3.0mA Max @ V
PD
= 2.9 V
16
18
20
mA
V
CC
= 3.5V; V
PD
= 2.7V; V
PD
+ V
CC
18
20.5
27
mA
V
CC
= 3.5V; V
PD
= 2.9V; V
PD
+ V
CC
Power Down
10
A
V
CC
= 3.5V; V
PD
0.9 V
4-186
RF2361
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Pin
Function
Description
Interface Schematic
1
RF IN
RF input pin. This pin is DC coupled and matched to 50
at 836 MHz.
2
GND1
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
3
VPD
For low noise amplifier applications, this pin is used to control the bias
current. See plots for bias current settings. An external resistor (R1)
can be used to set the bias current for any V
PD
voltage.
For driver amplifier applications, this is the Power Down pin for the IC.
V
PD
=2.8V +/- 0.1V is required for proper operation. V
PD
< 0.9V turns
off the Part. External RF bypassing is required. The trace length
between the pin and the bypass capacitors should be minimized. The
ground side of the bypass capacitors should connect immediately to
ground plane. Nominal current required for V
PD
=2.8V is 2.0mA typical
and 3.0mA Max (@ V
PD
= 2.9V).
4
RF OUT
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
CC
or pin 4 through a choke or matching inductor.
This pin is typically matched to 50
with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
5
GND2
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
RF IN
RF OUT
To Bias
Circuit
PD
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Application Schematic:
Low Noise Amplifier ~881MHz Operation
Application Schematic:
Low Noise Amplifier ~1950MHz Operation
1
2
3
5
4
22 nF
J1
RF IN
100 pF
10 nF
1k
VPD
12 nH
2 pF
J2
RF OUT
100 pF
10 nF
VCC
1
2
3
5
4
22 nF
J1
RF IN
100 pF
10 nF
1k
VPD
3.3 nH
1 pF
J2
RF OUT
100 pF
10 nF
VCC
4-188
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Application Schematic:
Driver Amplifier ~836MHz Operation
Application Schematic:
Driver Amplifier ~1880MHz Operation
1
2
3
5
4
22 nF
J1
RF IN
100 pF
10 nF
0
VPD
12 nH
2 pF
J2
RF OUT
100 pF
10 nF
VCC
1
2
3
5
4
22 nF
J1
RF IN
100 pF
10 nF
0
VPD
3.3 nH
1 pF
J2
RF OUT
100 pF
10 nF
VCC
4-189
RF2361
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Evaluation Board Schematic:
Low Noise Amplifier ~881MHz Operation
(Download Bill of Materials from www.rfmd.com.)
Evaluation Board Schematic:
Driver Amplifier ~836MHz Operation
1
2
3
5
4
C3
22 nF
50
strip
J1
RF IN
C2
220 pF
C1
10 nF
R1
1k
VPD
50
strip
C4
2 pF
50
strip
J2
RF OUT
L1
12 nH
C5
220 pF
C6
10 nF
VCC
2361410 Rev-
P1-1
VPD
GND
C7
4.7
F
VCC
P1
1
2
3
1
2
3
5
4
C3
22 nF
50
strip
J1
RF IN
C2
220 pF
C1
10 nF
R1
0
VPD
50
strip
C4
2 pF
50
strip
J2
RF OUT
L1
12 nH
C5
220 pF
C6
10 nF
VCC
2361400 Rev-
P1
1
2
3
P1-1
VPD
GND
VCC
C7
4.7
F
4-190
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Evaluation Board Layout - 900MHz Driver
Board Size 0.948" x 1.063"
Board Thickness 0.031"; Board Material FR-4
Evaluation Board Layout - 900MHz LNA
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Driver Amp 836 MHz
I
CC
versus V
PD
19.0
19.5
20.0
20.5
21.0
21.5
22.0
22.5
23.0
23.5
24.0
24.5
25.0
25.5
26.0
2.7
2.8
2.9
3.0
V
PD
I
CC
(mA)
2.7V Icc (mA)
3.0V Icc (mA)
3.3V Icc (mA)
3.6V Icc (mA)
Driver Amp 836 MHz
Gain versus V
PD
20.72
20.74
20.76
20.78
20.80
20.82
20.84
20.86
20.88
20.90
20.92
2.70
2.80
2.90
3.00
V
PD
Gain (dB)
2.7V Gain (dB)
3.0V Gain (dB)
3.3V Gain (dB)
3.6V Gain (dB)
Driver Amp 836 MHz
OIP3 versus V
PD
27.0
28.0
29.0
30.0
31.0
32.0
33.0
2.7
2.8
2.9
3.0
V
PD
OIP3 (dBm)
2.7V OIP3 (dBm)
3.0V OIP3 (dBm)
3.3V OIP3 (dBm)
3.6V OIP3 (dBm)
Driver Amp 836 MHz
P
OUT
1dB versus V
PD
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
2.7
2.8
2.9
3.0
V
PD
P
OUT
1dB (dBm)
2.7V P 1dB (dBm)
3.0V P 1dB (dBm)
3.3V P 1dB (dBm)
3.6V P 1dB (dBm)
Driver Amp 836 MHz
Noise Figure versus V
PD
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
2.70
2.80
2.90
3.00
V
PD
NF (dB)
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)
4-192
RF2361
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Low Noise Amplifier 881 MHz
Gain versus I
CC
19.55
19.60
19.65
19.70
19.75
19.80
19.85
19.90
19.95
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
I
CC
Gain (dB)
2.7V Gain (dB)
3.0V Gain (dB)
3.3V Gain (dB)
3.6V Gain (dB)
Low Noise Amplifier 881 MHz
OIP3 versus I
CC
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
28.5
29.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
I
CC
(mA)
OIP3 (dBm)
2.7V OIP3 (dBm)
3.0V OIP3 (dBm)
3.3V OIP3 (dBm)
3.6V OIP3 (dBm)
Low Noise Amplifier 881 MHz
IIP3 versus I
CC
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
I
CC
(mA)
IIP3 (dBm)
2.7V IIP3 (dBm)
3.0V IIP3 (dBm)
3.3V IIP3 (dBm)
3.6V IIP3 (dBm)
Low Noise Amplifier 881 MHz
P
OUT
1dB versus I
CC
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
I
CC
(mA)
P
OUT
1dB (dBm)
2.7V Pout 1dB (dBm)
3.0V Pout 1dB (dBm)
3.3V Pout 1dB (dBm)
3.6V Pout 1dB (dBm)
Low Noise Amplifier 881 MHz
Noise Figure versus I
CC
1.33
1.34
1.35
1.36
1.37
1.38
1.39
1.40
1.41
1.42
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
I
CC
NF (dB)
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)