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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
5
4
R F IN
G N D 1
V P D
R F O U T
G N D 2
RF2362
PCS CDMA/TDMA 3V
PA DRIVER AMPLIFIER
TDMA/CDMA/FM PCS Tx Amplifier
Low Noise Transmit Driver Amplifier
2.4GHz WLAN Systems
General Purpose Amplification
Commercial and Consumer Systems
The RF2362 is a low noise CDMA/TDMA PA driver ampli-
fier with a very high dynamic range designed for transmit
digital PCS applications at 1880 MHz. The device func-
tions as an outstanding PA driver amplifier in the transmit
chain of digital subscriber units where low transmit noise
power is a concern. The IC includes a power down fea-
ture that can be used to completely turn off the device.
The IC is featured in a standard SOT 5-lead plastic pack-
age.
Low Noise and High Intercept Point
Adjustable Bias Current
Power Down Control
Single 2.5V to 6.0V Power Supply
150MHz to 2500MHz Operation
Extremely Small SOT23-5 Package
RF2362
PCS CDMA/TDMA 3V PA Driver Amplifier
RF2362 PCBA
Fully Assembled Evaluation Board
4
Rev A4 010720
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3 MAX
0 MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT 5-Lead Package
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +8.0
V
DC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
RF Frequency Range
150 to 2500
MHz
1880 MHz Performance
Schematic per Evaluation Board, T = 25C,
RF= 1880MHz, V
PD
= 2.8V
Gain
19
20.1
21.5
dB
V
CC
= 3.5V
19
20.1
21.5
dB
V
CC
= 3.0V
19
20.1
21.5
dB
V
CC
= 2.7V
Output IP3
+ 24
+25.5
+ 35
dBm
V
CC
= 3.5V
+ 25.0
dBm
V
CC
= 3.0V
+ 24.5
dBm
V
CC
= 2.7V
Noise Figure
2.2
2.5
dB
V
CC
= 3.5V
2.2
2.5
dB
V
CC
= 3.0V
2.2
2.5
dB
V
CC
= 2.7V
Reverse Isolation
32
dB
V
CC
= 3.5V
32
dB
V
CC
= 3.0V
32
dB
V
CC
= 2.7V
Input VSWR
1.8:1
2.0:1
Output VSWR
1.6:1
2.0:1
Using External LC network used on Evalua-
tion Board
P
1dB
14
14.5
dBm
V
CC
= 3.5V
12.5
14
dBm
V
CC
= 3.0V
11
13.5
dBm
V
CC
= 2.7V
Power Supply
T = 25 C
Voltage (V
CC
)
2.5 to 6.0
V
Voltage (V
PD
)
2.7
2.8
2.9
V
Current Consumption
24
35
43
mA
V
CC
= 3.5V; V
PD
= 2.8 V; V
PD
+ V
CC
- Current
Consumption from V
PD
is 8.5 mA Typ. @
V
PD
= 2.8V and 12 mA Max @ V
PD
= 2.9 V
24
32
38
mA
V
CC
= 3.0V; V
PD
= 2.7V; V
PD
+ V
CC
29
37
43
mA
V
CC
= 2.7V; V
PD
= 2.9V; V
PD
+ V
CC
- Power Down
10
V
CC
= 3.5V; V
PD
0.9V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Pin
Function
Description
Interface Schematic
1
RF IN
RF input pin. This pin is DC-coupled and matched to 50
at 1880MHz.
2
GND1
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
3
VPD
Power Down for the IC. V
PD
= 2.8V +/- 0.1V turns on the part.
V
PD
<0.9V turns off the part. External RF bypassing is required. The
trace length between the pin and the bypass capacitors should be min-
imized. The ground side of the bypass capacitors should connect
immediately to ground plane. Nominal current required for V
PD
= 2.8V
is 8.5 mA typical and 12 mA Max (@ V
PD
=2.9 V).
4
RF OUT
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
CC
or pin 4 through a choke or matching inductor.
This pin is typically matched to 50
with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
5
GND2
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
RF IN
PD
TO OUTPUT
STAGE
PD
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Application Schematic:
~1880 MHz Operation, Internal Collector Bias
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
1
2
3
5
4
10 pF
J1
RF IN
220 pF
10 nF
R1
0
VPD
4.7 nH
1 pF
220 pF
10 nF
VCC
J2
RF OUT
1
2
3
5
4
C3
4 pF
50
strip
J1
RF IN
C2
220 pF
C1
10 nF
R1
0
VPD
50
strip
C4
1 pF
50
strip
J2
RF OUT
L1
4.7 nH
C5
220 pF
C6
10 nF
VCC
P1
1
2
3
P1-1
VPD
GND
VCC
C7
4.7
F
2362400-
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Evaluation Board Layout
Board Size 1" x 1"
Board Thickness 0.014"; Board Material FR-4
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Gain versus V
PD
(Averaged)
19.00
19.05
19.10
19.15
19.20
19.25
19.30
19.35
19.40
19.45
19.50
19.55
19.60
19.65
19.70
19.75
19.80
2.70
2.80
2.90
3.00
V
PD
Gain
(dB)
2.7V Gain (dBm)
3.0V Gain (dBm)
3.3V Gain (dBm)
3.6V Gain (dBm)
OIP3 versus V
PD
(Averaged)
23.5
24.0
24.5
25.0
25.5
26.0
26.5
2.7
2.8
2.9
3.0
V
PD
OIP3
(dBm)
2.7V OIP3 (dBm)
3.0V OIP3 (dBm)
3.3V OIP3 (dBm)
3.6V OIP3 (dBm)
P1dB versus V
PD
(Averaged)
13.0
13.5
14.0
14.5
15.0
15.5
16.0
2.7
2.8
2.9
3.0
V
PD
P1dB
(dBm)
2.7V P1dB (dBm)
3.0V P1dB (dBm)
3.3V P 1dB (dBm)
3.6V P 1dB (dBm)
Noise Figure versus V
PD
2.15
2.16
2.17
2.18
2.19
2.20
2.21
2.22
2.23
2.24
2.25
2.70
2.80
2.90
3.00
V
PD
Noise
Figure
(
dB)
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)
I
CC
versus V
PD
(Averaged)
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
2.7
2.8
2.9
3.0
V
PD
I
CC
(mA)
2.7V Icc (mA)
3.0V Icc (mA)
3.3V Icc (mA)
3.6V Icc (mA)
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