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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
RF IN
2
GND1
3
PD
GND2
4
5
RF OUT
RF2365
3V LOW NOISE AMPLIFIER
DCS GSM
PCS CDMA
PCS TDMA
2.4GHz Systems
General Purpose Amplification
Commercial and Consumer Systems
The RF2365 is a low noise amplifier with a high dynamic
range designed for the receive front end of digital cellular
applications at PCS/DCS frequencies. It is designed to
amplify low level signals with minimum noise contribution
while operating in the harsh, interference-rich environ-
ments of newly deployed digital subscriber units. The part
provides excellent performance as a LNA for 2.4GHz
radio applications. The IC is featured in a standard
SOT 5-lead plastic package.
1.6dB Noise Figure @ 1850MHz
1.75dB Noise Figure @ 2450MHz
18.0dB Gain at PCS/DCS
15.5dB Gain at 2.45GHz
External Bias Control
Extremely Small SOT23-5 Package
RF2365
3V Low Noise Amplifier
RF2365 PCBA
Fully Assembled Evaluation Board
4
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1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3 MAX
0 MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT 5-Lead
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +8.0
V
DC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
RF Frequency Range
1500
2500
MHz
PCS Performance
Schematic per 1.9GHz LNA Application
Schematic, V
PD
= 3.0 V
CC
= 3.0V,
T = 25C
Gain
16
18
20
dB
V
CC
= 3.0V, I
CC
= 8.0mA
Noise Figure
1.6
dB
Off Mode Gain
-15
dB
V
CC
= 3.0V, V
PD
= 0
|S
12
|
25
dB
Input IP3
-3.5
dBm
V
CC
= 3.0V, I
CC
= 5.0mA, R
1
=150
(see
application schematic)
+2.0
dBm
V
CC
= 3.0V, I
CC
= 6.5mA, R
1
=75
(see appli-
cation schematic)
+4.0
dBm
V
CC
= 3.0V, I
CC
= 8.0mA, R
1
=0
(see appli-
cation schematic)
Output IP3
20.0
22.0
28.0
dBm
V
CC
= 3.0V, I
CC
= 8.0mA, R
1
=0
(see appli-
cation schematic)
Input VSWR
1.7
Output VSWR
1.4
2.4GHz Performance
Schematic per 2.4GHz LNA Application
Schematic
T = 25C
Gain
15.5
dB
V
CC
= 3.0V, I
CC
= 8.0mA
Noise Figure
1.75
dB
Input IP3
+2.0
dBm
V
CC
= 3.0V, I
CC
= 8.0mA
Input VSWR
1.3
Output VSWR
1.75
Power Supply
T = 25 C
Voltage (V
CC
)
3
V
Current Consumption
5.0
8.0
11.0
mA
V
CC
= 3.0V, IIP3= +4.0dBm
6.5
mA
V
CC
= 3.0V, IIP3= +2.0dBm
5.0
mA
V
CC
= 3.0V, IIP3= -3.5dBm
Power Down
0
1
A
V
CC
= 3.0V; V
PD
0.9V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Pin
Function
Description
Interface Schematic
1
RF IN
RF input pin. This pin is DC coupled.
2
GND1
Ground connection. See evaluation board schematic notes.
3
PD
Power down pin. This pin serves as the interstage for the 2-stage LNA.
An inductor is required to pull pin 3 to V
CC
(see application schematic).
If desired, this voltage can be lowered to trade off IP3 versus I
CC,TOTAL
.
(See table below.)
4
GND2
Ground connection. See evaluation board schematic notes.
5
RF OUT
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V
CC
or pin 4 through a choke or matching inductor.
This pin is typically matched to 50
with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
R1
IIP3
I
CC
0
+4.0dBm
8.0mA
75
+2.0dBm
6.5mA
150
-3.5dBm
5.0mA
GND1
RF IN
PD
To Bias
Circuit
PD
To RF
Stages
To Bias
Circuit
GND2
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Application Schematic - 1.9GHz
Application Schematic - 2.4GHz
5
4
3
2
1
3.9 nH
47 pF
1 pF
V
CC
22 nF
3.3 nH
47 pF
EN
0
RF OUT
RF IN
5
4
3
2
1
3.9 nH
22 pF
1.5 pF
V
CC
RF OUT
22 nF
RF IN
2.2 nH
22 pF
EN
NOTES:
* R1 is left open.
R1*
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Evaluation Board Schematic - 1.9GHz
(Download Bill of Materials from www.rfmd.com.)
Evaluation Board Schematic - 2.4GHz
5
4
3
2
1
L 2
3 .9 n H
C 3
1 0 n F
C 4
1 p F
C 1
2 2 n F
L 1
3 .3 n H
C 5
4 7 p F
N O T E S :
*G ro u n d tra c e s o n p in s 2 a n d 4 a re e q u iv a le n t to a 1 .8 n H
in d u c to r. If a n in d u c to r is n o t u s e d , th e d im e n s io n s a re a s fo llo w s :
L e n g th = 1 4 0 m ils
W id th = 2 0 m ils
H e ig h t = 3 1 m ils fro m th e g o u n d p la n e . D ie le c tric is F R -4 .
J 2
R F O U T
V C C
J 1
R F IN
E N
G N D
P 1 -2
V C C
P 1
1
2
P 2
1
2
G N D
P 2 -2
E N
*
*
5 0
s trip
5 0
s trip
R 1
0
C 6
1 0 n F
2 3 6 5 4 0 0 , R e v A
C 2
4 7 p F
5
4
3
2
1
L2
3.9 nH
C 2
22 pF
C 3
10 nF
C 4
1.5 pF
C 1
22 nF
L1
2.2 nH
C 5
22 pF
C 6
10 nF
R 1*
N O T E S :
* R 1 is left o p en .
**G ro u nd trac e o n p in 2 is e qu iva le nt to a 1.0 n H in d uc to r. If a n
in du c tor is n ot u s e d, th e dim e ns io ns a re a s fo llo w s :
L en g th = 8 5 m ils
W idth = 2 0 m ils
H eig ht = 3 1 m ils from th e go u nd p la n e. D ie le c tric is F R -4 .
J2
R F O U T
V C C
J1
R F IN
E N
G N D
P 1-2
V C C
P 1
1
2
P 2
1
2
G N D
P 2-2
E N
**
50
strip
50
strip
2 36 54 01 , R e v -
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Evaluation Board Layout
Board Size 1" x 1"
1.9GHz
Board Thickness 0.031"; Board Material FR-4
2.4GHz
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Gain versus Frequency and V
CC
(Temp = +25C, RF IN = -36 dBm)
16.80
17.00
17.20
17.40
17.60
17.80
18.00
18.20
18.40
18.60
18.80
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
Gain (dB)
Gain, 2.8V
Gain, 3.0V
Gain, 3.2V
Gain versus Frequency and Temp
(V
CC
= 2.8 V, RF IN = -35 dBm)
16.00
16.20
16.40
16.60
16.80
17.00
17.20
17.40
17.60
17.80
18.00
18.20
18.40
18.60
18.80
19.00
19.20
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
Gain (dB)
Gain, -40C
Gain, +25C
Gain, +85C
Input P1dB versus Frequency and V
CC
(Temp = +25C)
-7.20
-7.00
-6.80
-6.60
-6.40
-6.20
-6.00
-5.80
-5.60
-5.40
-5.20
-5.00
-4.80
-4.60
-4.40
-4.20
-4.00
-3.80
-3.60
-3.40
-3.20
-3.00
-2.80
-2.60
-2.40
-2.20
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
Input P1dB (dBm)
IP1dB, 2.8V
IP1dB, 3.0V
IP1dB, 3.2V
Input P1dB versus Frequency and Temp
(V
CC
= 2.8 V)
-8.00
-7.80
-7.60
-7.40
-7.20
-7.00
-6.80
-6.60
-6.40
-6.20
-6.00
-5.80
-5.60
-5.40
-5.20
-5.00
-4.80
-4.60
-4.40
-4.20
-4.00
-3.80
-3.60
-3.40
-3.20
-3.00
-2.80
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
Input P1dB (dBm)
IP1dB, -40C
IP1dB, +25C
IP1dB, +85C
IIP3 versus Frequency and V
CC
(Temp = +25C)
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
IIP3 (dBm)
IIP3, 2.8V
IIP3, 3.0V
IIP3, 3.2V
IIP3 versus Frequency and Temp
(V
CC
= 2.8 V)
-4.50
-4.00
-3.50
-3.00
-2.50
-2.00
-1.50
-1.00
-0.50
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
IIP3 (dBm)
IIP3, -40C
IIP3, +25C
IIP3, +85C
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I
CC
versus V
CC
and Temp
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
10.50
2.80
3.00
3.20
V
CC
I
CC
(mA)
Icc, -40C
Icc, +25C
Icc, +85C
Noise Figure versus Frequency and V
CC
(Temp = Ambient)
1.28
1.29
1.30
1.31
1.32
1.33
1.34
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
Noise Figure (dB)
NF, 2.8V
NF, 3.0V
NF, 3.2V
0
1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
Input/Output Impedance @ 2.8 V
Swp Max
3.5GHz
Swp Min
0.1GHz
S[1,1]
S[2,2]
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