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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
2
GND1
3
RF IN
4
RF OUT
5
GND2
Logic
Control
1
VREF/PD
SELECT
6
RF2369
3V LOW NOISE AMPLIFIER/
3V PA DRIVER AMPLIFIER
CDMA/Cellular Bypass LNA
CDMA/Cellular Bypass Driver Amplifier
General Purpose Amplification
Commercial and Consumer Systems
The RF2369 is a switchable low noise amplifier with a
very high dynamic range designed for digital cellular
applications. The device functions as an outstanding front
end low noise amplifier. When used as an LNA, the bias
current can be set externally. When used as a PA driver,
the IC can operate directly from a single cell Li-ion battery
and includes a power down feature that can be used to
completely turn off the device. The IC is featured in a
standard SOT 6-lead plastic package.
Low Noise and High Intercept Point
Adjustable Bias Current
LNA Bypass Loss is +2dB
150MHz to 2500MHz Operation
Meets IMD Tests with Two Gain States/
Single Logic Control Line
RF2369
3V Low Noise Amplifier/ 3V PA Driver Amplifier
RF2369 PCBA
Fully Assembled Evaluation Board (LNA)
4
Rev A3 010720
0.90
0.70
0.10 MAX.
1.30
1.00
3.10
2.70
0.37 MIN.
3.00
2.60
1.90
0.25
0.10
0.50
0.35
1.80
1.40
9
TE
X
T
*
*When Pin 1 is in
upper left, text
reads downward
(as shown).
All dimensions in mm.
1
Package Style: SOT 6-Lead
Preliminary
4-184
RF2369
Rev A3 010720
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +8.0
V
DC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T
AMB
= 25C, V
CC
=3.0V
Frequency Range
150
824 to 894
2500
MHz
Cellular Low Noise
Amplifier
Frequency
869
894
MHz
HIGH GAIN MODE
Gain Select< 0.8V, V
PD
/V
REF
=3V
Gain
14.0
15.5
17.0
dB
Noise Figure
1.6
2.0
dB
Input IP3
9.0
11.5
dBm
Input VSWR
2:1
Output VSWR
2:1
Current Drain
7.5
10.0
mA
BYPASS MODE
Gain Select> 1.8V, V
PD
/V
REF
=0V
Gain
-3
-2
-1
dB
Input IP3
+10
+24
dBm
Input VSWR
2:1
Output VSWR
2:1
Current Drain
2.0
4.0
mA
Cellular CDMA Driver
Frequency
824
849
MHz
HIGH GAIN MODE
Gain Select< 0.8V, V
PD
/V
REF
=3V
Gain
14.0
15.5
17.0
dB
Noise Figure
2.0
2.5
dB
Output Power
4
dBm
ACPR1
-65
dBc/30kHz
P
OUT
=+4dBm, +885kHz offset
ACPR2
-70
dBc/30kHz
P
OUT
=+4dBm, +1.98MHz offset
Input VSWR
2:1
Output VSWR
2:1
Current Drain
8.5
mA
BYPASS MODE
Gain Select> 1.8V, V
PD
/V
REF
=0V
Gain
-3.0
-2.0
-1.0
dB
Input IP3
+10
+24
dBm
Input VSWR
2:1
Output VSWR
2:1
Current Drain
2.0
4.0
mA
Power Supply
Voltage (V
CC
)
3
V
V
SELECT
Low
0.8
V
High Gain mode.
Select< 0.8V, V
PD
/V
REF
=3V
V
SELECT
High
1.8
V
Low Gain mode.
Select> 1.8V, V
PD
/V
REF
=0V
Power Down
0
10
A
Gain Select< 0.8V, V
PD
/V
REF
=0V, V
CC
=0V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Preliminary
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RF2369
Rev A3 010720
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Pin
Function
Description
Interface Schematic
1
VREF/PD
For low noise amplifier applications, this pin is used to control the bias
current. An external resistor can be used to set the bias current for any
V
PD
voltage.
2
GND1
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
3
RF IN
RF input pin.
4
RF OUT
Amplifier output pin. This pin is an open-collector output. It must be
biased to V
CC
through a choke or matching inductor. This pin is typi-
cally matched to 50
with a shunt bias/matching inductor and series
blocking/matching capacitor. Refer to application schematics.
5
GND2
LNA emittance inductance. Total inductance is comprised of
package+bondwire+ stripline (L1) on PCB.
6
SELECT
This pin selects high gain and bypass.
Select < 0.8V, high gain.
Select > 1.8V, low gain.
VREF/PD
RF IN
RF OUT
To Bias
Circuit
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