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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
3
VREG
2
RF IN
1
VCC1
6
RF OUT
7
GND
5
VCC2
4
VMODE
RF3105
3V 900MHZ LINEAR AMPLIFIER MODULE
3V CDMA/AMPS Cellular Handsets
Spread-Spectrum Systems
The RF3105 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3 V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
824MHz to 849MHz band. The RF3105 has a digital bias
control voltage for low current in standby mode. The
device is self-contained with 50
input and output that is
matched to obtain optimum power, efficiency, and linear-
ity characteristics. The module is an ultra-small
6 mmx6mm land grid array with backside ground.
Input/Output Internally Matched @ 50
Single 3V Supply
29dBm Linear Output Power
28dB Linear Gain
35% Linear Efficiency
RF3105
3V 900MHz Linear Amplifier Module
RF3105 PCBA
Fully Assembled Evaluation Board
2
Rev A1 001030
6.0 sq
0.100
3.000
4.390
0.600
0.800 sq
typ
NOTE: Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package Style: LGM (6mmx6mm)
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
V
DC
Supply Voltage (P
OUT
31dBm)
+4.5
V
DC
Control Voltage (V
REG
)
+4.2
V
DC
Input RF Power
+10
dBm
Mode Voltage (V
MODE
)
+3.5
V
DC
Operating Ambient Temperature
-30 to +85
C
Storage Temperature
-30 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25C Ambient, V
CC
= 3.4V, V
REG
= 2.75V,
V
MODE
= 0, Freq= 824MHz to 849MHz unless
otherwise specified
Frequency Range
824
849
MHz
Linear Gain
27
29
32.5
dB
Second Harmonic
-30
dBc
Third Harmonic
-40
dBc
Maximum Linear Output Power
(CDMA Modulation)
28
29
dBm
Total Linear Efficiency
32
35
%
Adjacent Channel Power Rejec-
tion
-44
dBc
ACPR @ 885kHz
-58
-56
dBc
ACPR @1980kHz
Input VSWR
<2:1
Output VSWR
10:1
No damage.
6:1
No oscillations.
Noise Figure
8
dB
Noise Power
-89
dBm/30kHz
At 45MHz offset.
FM Mode
Frequency Range
824
849
MHz
Second Harmonic
-30
dBc
Third Harmonic
-40
dBc
Max CW Output Power
31.5
32
dBm
Total Efficiency (AMPS)
45
%
V
CC
= 3.4V, P
OUT
=31.5dBm
Large Signal Gain
27
dB
Input VSWR
<2:1
Output VSWR
10:1
No damage.
6:1
No oscillations.
Power Supply
Power Supply Voltage
3.2
3.4
4.5
V
Quiescent Current
100
mA
V
REG
Current
8
mA
Pin 3, V
REG
=2.75V
Turn On/Off time
40
s
Total Current (Power down)
10
A
V
REG
=Low
V
REG
"Low" Voltage
0
0.2
V
V
REG
"High" Voltage
2.65
2.75
2.85
V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Pin
Function
Description
Interface Schematic
1
VCC1
First stage collector supply. A low frequency decoupling capacitor (e.g.,
4.7
F) is required.
2
RF IN
RF input internally matched to 50
. This input is internally AC coupled.
3
VREG
Regulated voltage supply for amplifier bias.
4
VMODE
For nominal operation, V
MODE
is set to LOW. When set HIGH: V
MODE
will increase the bias current by approximately 50%; and, large signal
gain is increased by approximately 1.5dB.
5
VCC2
Output stage collector supply. A low frequency decoupling capacitor
(e.g., 4.7
F) is required.
6
RF OUT
RF output internally matched to 50
. This output is internally AC cou-
pled.
7
GND
Ground connection. Connect to package base ground. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane.
Pkg
Base
GND
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul-
tiple vias. The pad should have a short thermal path to the ground
plane.
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Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
3
2
1
6
7
5
4
50
strip
J2
RF OUT
50
strip
J1
RF IN
C2
4.7
F
C1
4.7
F
VCC1
VMODE
VCC2
VREG
C3
4.7
F
3105400-
Er = 4.7
H = 14 mils
t = 1 mil
V
CC
= 3.4 V
V
REG
= 2.75 V
V
MODE
= 0
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Evaluation Board Layout
Board Size 2.0" x 2.0"
Board Thickness 0.028", Board Material FR-4, Multi-Layer
Assembly
Top
Inner 1
Back
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