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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
3
VREG
2
RF IN
1
VCC1
6
RF OUT
7
GND
5
VCC2
4
VMO
D
E
RF3117
3V 900MHZ LINEAR AMPLIFIER MODULE
3V CDMA/AMPS Cellular Handsets
3V CDMA2000/1X Cellular Handsets
Compatible with Qualcomm Chipset
Spread-Spectrum Systems
The RF3117 is a high-power, high-efficiency linear ampli-
fier module targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3 V CDMA/AMPS handheld digital cellular equipment,
spread-spectrum systems, and other applications in the
824MHz to 849MHz band. The RF3117 has a digital con-
trol line for low power application to reduce the current
drain. The device is self-contained with 50
input and
output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6 mm land grid array with backside
ground.
Input/Output Internally Matched@50
Single 3V Supply
30dBm Linear Output Power
30dB Linear Gain
33% Linear Efficiency
55mA Idle Current
RF3117
3V 900MHz Linear Amplifier Module
RF3117 PCBA
Fully Assembled Evaluation Board
2
Rev A0 011016
6.0 sq
0.100
3.000
4.390
0.600
0.800 sq
typ
NOTE: Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package Style: LGM (6mmx6mm)
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
V
DC
Supply Voltage (P
OUT
31dBm)
+5.2
V
DC
Control Voltage (V
REG
)
+4.2
V
DC
Input RF Power
+10
dBm
Mode Voltage (V
MODE
)
+3.5
V
DC
Operating Case Temperature
-30 to +110
C
Storage Temperature
-30 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
High Power State
(V
MODE
Low)
Typical Performance at V
CC
=3.2V,
V
REG
=3V, T
AMB
= 25C,
Frequency= 824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
849
MHz
Linear Gain
27
30
dB
Second Harmonic
-35
dBc
Third Harmonic
-40
dBc
Maximum Linear Output Power
(CDMA Modulation)
29
30
dBm
Total Linear Efficiency
33
%
V
CC
= 3.2V, P
OUT
=29dBm
(room temperature)
Adjacent Channel Power
Rejection
-46.5
-45.0
dBc
ACPR @885kHz, P
OUT
= Max P
OUT
-59
-57
dBc
ACPR @1980kHz, P
OUT
= Max P
OUT
Input VSWR
1.8:1
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
Noise Power
-135
dBm/Hz
At 45MHz offset.
Low Power State
(V
MODE
High)
Typical Performance at V
CC
=3.2V,
V
REG
=3V, T
AMB
= 25C,
Frequency= 824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
849
MHz
Linear Gain
17.5
21
dB
Second Harmonic
-35
dBc
Third Harmonic
-40
dBc
Maximum Linear Output Power
(CDMA Modulation)
16
20
dBm
Adjacent Channel Power
Rejection
-52
-44
dBc
ACPR @885kHz, P
OUT
= Max P
OUT
-62
-55
dBc
ACPR @1980kHz, P
OUT
= Max P
OUT
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
FM Mode
Typical Performance at V
CC
= 3.2V,
V
REG
=3V, T
AMB
= 25C,
Frequency= 824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
849
MHz
Gain
30
dB
Second Harmonic
-32
dBc
Third Harmonic
-40
dBc
Max CW Output Power
31.5
dBm
Total Efficiency (AMPS mode)
42
%
P
OUT
= 31.5dBm (room temperature)
Input VSWR
<2:1
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
DC Supply
T
AMB
= 25C
Supply Voltage Range
3.2
3.7
4.2
V
Quiescent Current
160
240
mA
V
MODE
= Low, V
REG
=3V, V
CC
= 3.2V
55
65
mA
V
MODE
= High, V
REG
=3V, V
CC
= 3.2V
V
REG
Current
10
mA
V
MODE
= High
V
MODE
Current
1
mA
Turn On/Off Time
<40
s
V
REG
switch from Low to High,
I
CC
to within 90% of the final value,
P
OUT
within 1dB of the final value
Total Current (Power Down)
3
10
A
V
REG
= Low, V
MODE
= Low
V
REG
"Low" Voltage
0
0.5
V
V
REG
"High" Voltage
2.9
3.0
3.1
V
V
MODE
"Low" Voltage
0
0.5
V
V
MODE
"High" Voltage
2.0
3.0
V
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Pin
Function
Description
Interface Schematic
1
VCC1
First stage collector supply. A low frequency decoupling capacitor (e.g.,
4.7
F) is required.
2
RF IN
RF input internally matched to 50
. This input is internally AC-coupled.
3
VREG
Regulated voltage supply for amplifier bias. In Power Down mode, both
V
REG
and V
MODE
need to be LOW (< 0.5V).
4
VMODE
For nominal operation (High Power Mode), V
MODE
is set LOW. When
set HIGH, devices are turned off to improve efficiency.
5
VCC2
Output stage collector supply. A low frequency decoupling capacitor
(e.g., 4.7
F) is required.
6
RF OUT
RF output internally matched to 50
. This output is internally AC-cou-
pled.
7
GND
Ground connection. Connect to package base ground. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane.
Pkg
Base
GND
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul-
tiple vias. The pad should have a short thermal path to the ground
plane.
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Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
3
2
1
6
7
5
4
50
strip
J6
RF OUT
50
strip
J2
RF IN
C1
4.7
F
C2
4.7
F
VCC1
VMODE
VCC2
VREG
C4
4.7
F
C3
4.7
F
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