2-547
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
GND
GND
RF OUT
VCC2
PDET_OUT
VM
O
D
E
PA
_
O
N
VCC3
GND
GND
RF IN
VCC1
12
11
1
2
3
4
5
10
9
8
7
6
Bias
Pwr
Det
RF3300-3
3V 1900MHz LINEAR AMPLIFIER MODULE
3V CDMA US-PCS Handsets
3V CDMA2000/1X PCS Handsets
Spread-Spectrum Systems
Designed for Compatibility with Qualcomm
Chipsets
The RF3300-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA handheld digital cellular equipment, spread-
spectrum systems, and other applications in the
1850MHz to 1910MHz band. The RF3300-3 has a digital
control line for low power application to reduce the cur-
rent drain. The device is self-contained with 50
input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. This amplifier con-
tains a temperature compensating bias circuit for
improved performance over temperature.
Single 3V Supply with Internal V
REF
Integrated Power Detector
25dB Linear Gain
40mA Idle Current (Low Power Mode)
Temperature Compensating Bias Circuit
Integrated PA Enable Switch
RF3300-3
3V 1900MHz Linear Amplifier Module
RF3300-3 PCBA Fully Assembled Evaluation Board
0
Rev A5 030612
NOTES:
Nominal thickness, 1.55
mm.
Note orientation of Pin 1.
Dimensions in mm.
1
0.
12
5 T
Y
P
7.375 TYP
6.775
6.575 TYP
5.875 TYP
5.075 TYP
4.375 TYP
3.575 TYP
2.875 TYP
2.075 TYP
0.925 TYP
0.000
0.125 TYP
Bottom View
4.3
7
5
3.5
7
5
2.4
2
5
1.6
2
5
0.
00
0
0.
92
5 T
Y
P
1.
75
0
4.
25
0
5.
07
5 T
Y
P
5
.
87
5 T
Y
P
Package Style: Module (6mmx7.5mm)
2-548
RF3300-3
Rev A5 030612
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
V
DC
Supply Voltage (P
OUT
28dBm)
+5.2
V
DC
Control Voltage (PA_ON)
+3.6
V
DC
Mode Voltage (V
MODE
)
+3.6
V
DC
Input RF Power
+10
dBm
Operating Case Temperature
-30 to +100
C
Storage Temperature
-30 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
High Power State
(V
MODE
Low)
Typical Performance at V
CC
=3.2V,
PA_ON=High, T
AMB
=25C,
Frequency=1850MHz to 1910MHz
(unless otherwise specified)
Frequency Range
1850
1910
MHz
Linear Gain
24
25
dB
Second Harmonic
-45
dBc
Third Harmonic
-45
dBc
Maximum Linear Output Power
(CDMA Modulation)
28
dBm
Total Linear Efficiency
35
%
P
OUT
=28dBm
Adjacent Channel Power
Rejection
-47
-46
dBc
ACPR@1.25MHz, P
OUT
=28dBm
-61
-58
dBc
ACPR@2.25MHz, P
OUT
=28dBm
Input VSWR
1.5:1
Output VSWR
10:1
No damage.
6:1
No oscillations. >-70dBc
Noise Power
-141
dBm/Hz
At 80MHz offset.
Low Power State
(V
MODE
High)
Typical Performance at V
CC
=3.2V,
PA_ON=High, T
AMB
=25C,
Frequency=1850MHz to 1910MHz
(unless otherwise specified)
Frequency Range
1850
1910
MHz
Linear Gain
17
20
dB
Second Harmonic
-45
dBc
Third Harmonic
-45
dBc
Maximum Linear Output Power
(CDMA Modulation)
16
dBm
Adjacent Channel Power
Rejection
-49
-47
dBc
ACPR@1.25MHz, P
OUT
=16dBm
-64
-59
dBc
ACPR@2.25MHz, P
OUT
=16dBm
Input VSWR
2:1
Output VSWR
10:1
No damage.
6:1
No oscillations. >-70dBc
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
2-549
RF3300-3
Rev A5 030612
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
DC Supply
T
AMB
=25
o
C
Supply Voltage
3.2
3.7
4.2
V
Quiescent Current
150
180
mA
V
MODE
=Low
40
55
mA
V
MODE
=High
PA_ON Current
0.1
A
V
MODE
Current
0.1
A
Turn On/Off Time
<40
s
PA_ON switched from low to high, I
CC
to
within 90% of the final value, P
OUT
within
1dB of the final value.
Total Current (Power Down)
5
A
PA_ON=Low
PA_ON "Low" Voltage Range
0
0.5
V
PA_ON "High" Voltage Range
1.7
2.7
3.6
V
Must not exceed V
CC
.
V
MODE
"Low" Voltage Range
0
0.5
V
V
MODE
"High" Voltage Range
1.7
2.7
3.6
V
Must not exceed V
CC
.
Gain Settling Time
6
s
PA_ON switched from low to high,
P
OUT
within 1dB of the final value.
6
s
PA_ON switched from high to low,
P
OUT
within 1dB of the final value.
Internal Power Detector
PDET Output Voltage
1.35
V
P
OUT
=28dBm, V
MODE
=Low
0.6
V
P
OUT
=16dBm, V
MODE
=High
2-550
RF3300-3
Rev A5 030612
Pin
Function
Description
Interface Schematic
1
VCC3
Bias circuit and HDET power supply. A low frequency decoupling
capacitor (2.2
F) is required. Type: P
2
GND
Ground connection. Connect to the GND_SLUG pin. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane. Type: P
3
GND
Ground connection. Connect to the GND_SLUG pin. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane. Type: P
4
RF IN
RF input internally matched to 50
. This input is internally AC-coupled
at the IC; however a shunt inductor used in the input matching network
will provide a DC path to ground for components connected to the RF
IN pin. A DC blocking capacitor may be required at this pin. Type: A, I
5
VCC1
First stage power supply. A low frequency decoupling capacitor (2.2
F)
is required. Type: P
6
GND
Ground connection. Connect to the GND_SLUG pin. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane. Type: P
7
GND
Ground connection. Connect to the GND_SLUG pin. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane. Type: P
8
RF OUT
RF output internally matched to 50
. This input is internally AC-cou-
pled. Type: A, O
9
VCC2
Output stage power supply. A low frequency decoupling capacitor
(2.2
F) is required. Type: P
10
PDET_OUT
Power detector output. Type: A, O
11
VMODE
Gain step control. When this pin is High, the module is in low power
mode, and the amplifier's current is reduced. When this pin is Low, the
module is in high power mode. Voltage should not be applied to this pin
before VCC3 is applied. Type: D, I
12
PA_ON
Device enable control. When this pin is High, the device is on. When
this pin is Low, the device is off. Voltage should not be applied to this
pin before VCC3 is applied. Type: D, I
13
GND_SLUG
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul-
tiple vias. The pad should have a short thermal path to the ground
plane. Type: P
Note: Where Type code is:
I=Input; O=Output; A=Analog; D=Digital; P=Power
RF IN
From
Bias
Stage
VCC1
2-551
RF3300-3
Rev A5 030612
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
12
11
1
2
3
4
5
10
9
8
7
6
50
strip
J1
RF IN
VCC1
C1
2.2
F
VCC3
C3
2.2
F
PA_ON
VMODE
VCC2
C2
2.2
F
50
strip
J2
RF OUT
PDET_OUT
R2
100 k
R3
100 k
R1
1 k
C4
10 nF
Bias
Pwr
Det
NOTE:
Resistors R2 and R3 are provided on the evaluation board to protect against power sequencing
issues. (Refer to pin descriptions 11 and 12.) These resistors are not needed when the VCC3 is
connected to the handset battery.
2-552
RF3300-3
Rev A5 030612
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