4-557
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
RF IN
GND
RF
O
U
T
GND
1
2
3
4
RF3315
BROADBAND HIGH LINEARITY AMPLIFIER
Basestation Applications
Cellular and PCS Systems
WLL, W-CDMA Systems
Final PA for Low-Power Applications
The RF3315 is a high-efficiency GaAs Heterojunction
Bipolar Transistor (HBT) amplifier packaged in a low-cost
surface-mount package. This amplifier is ideal for use in
applications requiring high-linearity and low noise figure
over the 300MHz to 3GHz frequency range. The RF3315
operates from a single 5V power supply.
300MHz to 3GHz
+40dBm Output IP3
12.5dB Gain at 2.0GHz
+23dBm P1dB
3.0dB Typical Noise Figure at 2.0GHz
Single 5V Power Supply
RF3315
Broadband High Linearity Amplifier
RF3315PCBA-410 Fully Assembled Evaluation Board (2GHz)
RF3315PCBA-411 Fully Assembled Evaluation Board (900MHz)
0
Rev A9 050310
Shaded lead is pin 1.
Dimensions in mm.
0.43
0.38
1.60
1.40
1.75
1.40
1.80
1.45
0.53
0.41
1.04
0.80
0.50
0.30
4.60
4.40
2.60
2.40
3.10
2.90
0.48
0.36
2 PL
Package Style: SOT89
Pb-Free Product
4-558
RF3315
Rev A9 050310
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20
dBm
Device Voltage
-0.5 to +6.0
V
Device Current
250
mA
Operating Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
AC Specifications (2GHz)
V
CC
=5V, RF
IN
=-10dBm, Freq=2.0GHz,
with 2GHz application schematic.
Frequency
300
3000
MHz
Gain (Small Signal)
11.0
12.5
dB
F=2GHz
Input Return Loss
15
dB
F=2GHz
Output Return Loss
15
dB
F=2GHz
Output IP3
+36
+40.0
dBm
F
1
= 1.99GHz, F
2
=2.00GHz, P
IN
=-5dBm
Output P1dB
+21
+23.0
dBm
Noise Figure
3.0
4.0
dB
AC Specifications
(900MHz)
V
CC
=5V, RF
IN
=-10dBm, Freq=900MHz,
with 900MHz application schematic.
Frequency
300
3000
MHz
Gain (Small Signal)
16
18
dB
Input Return Loss
20
dB
Output Return Loss
20
dB
Output IP3
+36
+41
dBm
F
1
= 900MHz, F
2
=901MHz, P
IN
=-10dBm
Output P1dB
+23
+25
dBm
Noise Figure
2.5
3.5
dB
Thermal
I
CC
=150mA, P
DISS
=770mW. (See Note.)
Theta
JC
88
C/W
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
154
C
T
CASE
=+85C
Mean Time To Failure
370
years
T
CASE
=+85C
DC Specifications
Device Voltage
4.5
5.0
5.5
V
I
CC
=150mA
Operating Current Range
100
150
170
mA
V
CC
=5V
Note: The RF3315 must be operated at or below 170mA to ensure the highest possible reliability and electrical performance.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4-559
RF3315
Rev A9 050310
Pin
Function
Description
Interface Schematic
1
RF IN
RF input pin. This pin is not internally DC-blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications.
2
GND
Ground connection.
3
RF OUT
RF output and bias pin. For biasing, an RF choke is needed. Because
DC is present on this pin, a DC blocking capacitor, suitable for the fre-
quency of operation, should be used in most applications. See applica-
tion schematic for configuration and value.
4
GND
Ground connection.
Pkg
Base
GND
Ground connection.
VCC
RF IN
VCC
RF OUT
4-560
RF3315
Rev A9 050310
Typical Application Schematic for 2GHz
Evaluation Board Schematic for 2GHz
1
2
3
4
2.2 pF
100 pF
RF IN
82 nH
1.5 pF
RF OUT
V
CC
100 pF
+
1
F
+
V
CC
3.6 nH
100 pF
+
1
F
+
1
2
3
4
C2
2.2 pF
C1
100 pF
C3
1.5 pF
VCC
50
strip
J2
RF OUT
50
strip
J1
RF IN
C3
100 pF
+
C4
1
F
+
VCC
P1
1
2
3
CON3
P1-1
VCC1
GND
GND
L2
3.6 nH
L1
82 nH
100 pF
+
1
F
+
4-561
RF3315
Rev A9 050310
Typical Application Schematic for 900MHz
Evaluation Board Schematic for 900MHz
RF IN
RF OUT
1
F
+
100 nH
4.7 pF
6 pF
V
CC
8.7 nH
4.7 nH
100 pF
1
2
3
4
P1
1
2
3
CON3
P1-1
VCC
GND
GND
C4
1
F
+
L2
100 nH
C1
4.7 pF
C2
6 pF
V
CC
L3
8.7 nH
L1
4.7 nH
C3
100 pF
J1
RF IN
J2
RF OUT
1
2
3
4
4-562
RF3315
Rev A9 050310
Evaluation Board Layout for 1.9GHz
Board Size 1.195" x 1.000"
Board Thickness 0.033", Board Material FR-4
Note: A small amount of ground inductance is required to achieve datasheet performance. The necessary inductance
may be generated by ensuring that no ground vias are placed directly below the footprint of the part.
Evaluation Board Layout for 900MHz
Board Size 1.195" x 1.000"
Board Thickness 0.033", Board Material FR-4
Note: A small amount of ground inductance is required to achieve datasheet performance. The necessary inductance
may be generated by ensuring that no ground vias are placed directly below the footprint of the part.
4-563
RF3315
Rev A9 050310
Gain versus Frequency Across Temperature,
V
CC
=5.0V (2GHz Application Frequency)
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0
Frequency (MHz)
Gain (dB)
-40C
25C
85C
OIP3 versus Frequency Across Temperature
V
CC
=5.0V (2GHz Application Frequency)
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
44.0
1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0
Frequency (MHz)
OIP3 (dBm)
-40C
25C
85C
P1dB versus Frequency Across Temperature
V
CC
=5.0V (2GHz Application Frequency)
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0
Frequency (MHz)
P1dB (dBm)
-40C
25C
85C
Reverse Isolation versus Frequency Across Temp
V
CC
=5.0V (2GHz Application Circuit)
-25.0
-24.0
-23.0
-22.0
-21.0
-20.0
-19.0
-18.0
-17.0
-16.0
-15.0
1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0
Frequency (MHz)
Isolation (dB)
-40C
25C
85C
Noise Figure versus Frequency Across Temperature
V
CC
=5.0V (2GHz Application Circuit)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0
Frequency (MHz)
Noise Figure (dB)
-40C
25C
85C
4-564
RF3315
Rev A9 050310
Reverse Isolation versus Frequency Across Temp,
V
CC
=5.0V (900MHz Application Circuit)
-30.0
-25.0
-20.0
-15.0
-10.0
700.0
750.0
800.0
850.0
900.0
950.0
1000.0
1050.0
Frequency (MHz)
Reverse Isolation (dB)
-40C
25C
85C
P1dB versus Frequency Across Temperature
V
CC
=5.0 (900MHz Application Circuit)
18.0
19.0
20.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
700.0
750.0
800.0
850.0
900.0
950.0
1000.0
1050.0
Frequency (MHz)
P1dB (dBm)
-40C
25C
85C
OIP3 versus Frequency Across Temperature
V
CC
=5.0V (900MHz Application Circuit)
27.0
30.0
33.0
36.0
39.0
42.0
45.0
48.0
700.0
750.0
800.0
850.0
900.0
950.0
1000.0
1050.0
Frequency (MHz)
OIP3 (dBm)
-40C
25C
85C
Gain versus Frequency Across Temperature,
V
CC
=5.0V (900MHz Application Circuit)
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
700.0
750.0
800.0
850.0
900.0
950.0
1000.0
1050.0
Frequency (MHz)
Gain (dB)
-40C
25C
85C
Input VSWR versus Frequency Across Temperature,
V
CC
=5.0V (2GHz Application Circuit)
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0
Frequency (MHz)
VSWR
-40C
25C
85C
Output VSWR versus Frequency Across Temperature,
V
CC
=5.0V (2GHz Application Circuit)
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
1750.0 1800.0 1850.0 1900.0 1950.0 2000.0 2050.0 2100.0 2150.0 2200.0 2250.0
Frequency (MHz)
VSWR
-40C
25C
85C
4-565
RF3315
Rev A9 050310
MTTF versus Junction Temperature,
(60% Confidence Interval)
1.0
10.0
100.0
1000.0
10000.0
100000.0
1000000.0
100.0
125.0
150.0
175.0
200.0
Junction Temperature (C)
MTTF (Years)
I
CC
versus V
CC
Across Temperature
60.0
80.0
100.0
120.0
140.0
160.0
180.0
200.0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
CC
(V)
I
CC
(mA)
-40C
25C
85C
Output VSWR versus Frequency Across Temperature,
V
CC
=5.0V (900MHz Application Circuit)
1.0
1.5
2.0
2.5
3.0
3.5
700.0
750.0
800.0
850.0
900.0
950.0
1000.0
1050.0
Frequency (MHz)
VSWR
-40C
25C
85C
Input VSWR versus Frequency Across Temperature
V
CC
=5.0V (900MHz Application Circuit)
1.0
1.5
2.0
2.5
3.0
3.5
700.0
750.0
800.0
850.0
900.0
950.0
1000.0
1050.0
Frequency (MHz)
VSWR
-40C
25C
85C
Noise Figure versus Frequency Across Temperature
V
CC
=5.0V (900MHz Application Circuit)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
700.0
750.0
800.0
850.0
900.0
950.0
1000.0
1050.0
Frequency (MHz)
Noise Figure (dB)
-40C
25C
85C
4-566
RF3315
Rev A9 050310
S11
3 GHz
300 MHz
0
1.0
1.0
-1.0
10.0
10.0
-10
.0
5.0
5.0
-5.
0
2.0
2.
0
-2
.0
3.0
3.0
-3.
0
4.0
4.0
-4.
0
0.2
0.2
-0.2
0.4
0.4
-0
.4
0.6
0.
6
-0
.6
0.8
0.
8
-0
.8
S11
Swp Max
3GHz
Swp Min
0.3GHz
S22
3 GHz
300 MHz
0
1.0
1.0
-1.0
10.0
10.0
-10
.0
5.0
5.0
-5.
0
2.0
2.
0
-2
.0
3.0
3.0
-3.
0
4.0
4.0
-4.
0
0.2
0.2
-0.2
0.4
0.4
-0
.4
0.6
0.
6
-0
.6
0.8
0.
8
-0
.8
S22
Swp Max
3GHz
Swp Min
0.3GHz
4-567
RF3315
Rev A9 050310
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is
3
inch to 8
inch gold over 180
inch nickel.
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and
tested for optimized assembly at RFMD; however, it may require some modifications to address company specific
assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances.
PCB Metal Land Pattern
A = 1.27 x 0.86 (mm) Typ.
Dimensions in mm.
A
A
Pin 1
0.43
1.02
1.48
2.34
2.79
3.43
0.03
0.66 Typ.
1.88 Typ.
5.36
Figure 1. PCB Metal Land Pattern (Top View)
4-568
RF3315
Rev A9 050310
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the
PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all
pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask
clearance can be provided in the master data or requested from the PCB fabrication supplier.
Thermal Pad and Via Design
Thermal vias are required in the PCB layout to effectively conduct heat away from the package. The via pattern has been
designed to address thermal, power dissipation and electrical requirements of the device as well as accommodating
routing strategies.
The via pattern used for the RFMD qualification is based on thru-hole vias with 0.203mm to 0.330mm finished hole size
on a 0.5mm to 1.2mm grid pattern with 0.025mm plating on via walls. If micro vias are used in a design, it is suggested
that the quantity of vias be increased by a 4:1 ratio to achieve similar results.
A = 1.37 x 0.96 (mm) Typ.
Dimensions in mm.
Pin 1
A
A
1.48
3.48
2.89
2.44
1.02
0.48
5.46
1.88 Typ.
0.72 Typ.
0.03
Figure 2. PCB Solder Mask Pattern (Top View)
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