4-631
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
V_BIAS
VREF
VCC1
RF IN
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
RF OUT/VCC2
1
2
3
4
8
7
6
5
PACKAGE BASE
GND
Bias
Circuit
RF3805
GaAs HBT PRE-DRIVER AMPLIFIER
GaAs HBT Pre-Driver for Basestation Amplifiers
Power Amplifier Stage for Commercial Wireless
Infrastructure
Class AB Operation for GSM/EDGE/
CDMA2000/W-CDMA Transmitter Applications
The RF3805 is specifically designed for wireless infra-
structure applications. Using a highly reliable GaAs HBT
fabrication process, this high-performance dual-stage
amplifier achieves high output power over a broad fre-
quency range. The RF3805 amplifier also provides excel-
lent efficiency and thermal stability through the use of a
thermally-enhanced surface-mount AlN package. Ease of
integration is accomplished through the incorporation of
an optimized evaluation board design provided to achieve
proper 50
operation. Various evaluation board configu-
rations are available to address a broad range of wireless
infrastructure applications:
GSM/EDGE1800
CDMA2000
W-CDMA
5W Output Power
High Linearity
40% Power-Added Efficiency
Thermally-Enhanced AlN Packaging
Broadband Platform Design Approach
RF3805
GaAs HBT Pre-Driver Amplifier
RF3805PCBA-411 Fully Assembled Evaluation Board - 1625 to 1665
RF3805PCBA-412 Fully Assembled Evaluation Board - 1710 to 1785
RF3805PCBA-413 Fully Assembled Evaluation Board - DCS1800
RF3805PCBA-414 Fully Assembled Evaluation Board - PCS1900
RF3805PCBA-415 Fully Assembled Evaluation Board - UMTS2100
0
Rev A1 040806
0.005 A
0.0025
-A-
0.024
0.156
0.025
R.008
0.028
TYP
0.020
7 PL
0.050
TYP
0.050
REF
0.0780
MAX
Dimensions in inches.
0.180
REF
0.198
0.200 REF
0.236
Shaded circle designates
pin 1 location.
Pin 1
Package Style: AlN
Proposed
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