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Электронный компонент: 2SA1900

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2SA1900
Transistors
Rev.A
1/2
Medium power transistor (
-
50V,
-
1A)
2SA1900

Features
1) Low saturation voltage, typically V
CE(sat)
=
-
0.15V at I
C
/
I
B
=
-
500mA /
-
50mA
2) P
C
=2W (on 40
40
0.7mm ceramic board)
3) Complements the 2SC5053





External dimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
1.5
0.4
1.6
0.5
3.0
0.4
0.4
1.5
1.5
(3)
(2)
(1)
4.5
0.5
4.0
2.5
1.0
Absolute maximum ratings (Ta=25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
Collector power dissipation
Collector current
Collector power dissipation
Storage temperature
Symbol
Limits
-
60
-
50
-
5
-
1
0.5
2
150
-
55 to
+
150
Unit
V
V
V
A
-
2
A (Pulse)
W
W
1
2
C
C
1 Single pulse Pw=20ms, Duty=1/2
2 When mounted on a 40 40 0.7mm seramic board.
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
+
+

External dimensions (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Cob
-
60
-
50
-
5
-
-
-
120
-
-
-
-
-
-
-
-
-
150
20
-
-
-
-
0.1
-
0.1
-
0.4
270
-
-
V
V
V
A
A
V
-
MHz
pF
I
C
=
-
50
A
I
C
=
-
1mA
I
E
=
-
50
A
V
CB
=
-
40V
V
EB
=
-
4V
I
C
/I
B
=
-
500mA/
-
50mA
V
CE
/I
C
=
-
3V/
-
0.5A
V
CE
=
-
5V , I
E
= 50mA , f=100MHz
V
CB
=
-
10V , I
E
= 0A , f=1MHz
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
f
T
V
CE(sat)

Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pleces)
2SA1900
MPT3
Q
T100
Marking
AL
1000
Denotes
h
FE


2SA1900
Transistors
Rev.A
2/2
Electric characteristics curves
Ta=25
C
Fig.1 Grounded emitter output characteristics
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
-
1
-
2
-
3
-
4
-
5
0
-
0.8
-
1.0
-
0.6
-
0.4
-
0.2
0
-
10mA
-
9mA
-
8mA
-
7mA
-
6mA
-
5mA
-
4mA
-
3mA
I
B
=
-
1mA
-
2mA
Fig.2 DC current gain
vs. collector current
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
-
0.01
-
0.1
-
0.001
-
1
-
2
10
20
50
100
200
500
1000
5
1
2
V
CE
=
-
3V
Ta=25
C
Fig.3 Collector-emitter saturation voltage
vs.collector current
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
-
100m
-
1m
-
10m
-
1
-
2
-
10
-
20
-
50
-
100
-
200
-
500
-
1000
-
5
-
1
-
2
Ta=25
C
I
C
/I
B
=10


1000
TRANSITION FREQUENCY : f
T
(MHz)
1
0.1
0.2
0.5
10m 20m
50m
1m 2m
5m
100
200
500
10
20
50
1
2
5
EMITTER CURRENT : I
E
(A)
Fig.4 Gain bandwith product
vs. emitter current
Ta
=
25
C
V
CE
= -
5V
Ta=25
C
f=1MHz
I
E
=0A
Fig.5 Collector output capacitance
vs. collector-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR OUTPUT CAPACITANCE : C
ob(
(pF)
-
0.1
-
1
-
100
-
10
10
20
50
100
200
500
1000
5
1
2
COLLECTOR CURRENT : I
C
(A)
Pw

=

10ms
100ms
DC
I
C Max.
(Pulse
)
Fig.6 Safe operating area
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
-
1
-
10
-
0.1
-
100
-
5
-
10
-
1
-
2
-
0.1
-
0.2
-
0.5
-
0.05
-
0.01
-
0.02
Ta=25
C
Single
nonrepeatitive pulse
Appendix
Appendix1-Rev1.1


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