2SA1952
Transistors
High-speed Switching Transistor (
-
60V,
-
5A)
2SA1952
Features
1) High speed switching. (tf : Typ. 0.15
s at I
C
= -
3A)
2) Low V
CE(sat)
. (Typ.
-
0.2V at I
C
/I
B
= -
3/
-
0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-
100
-
60
-
5
-
5
150
-
55~
+
150
Unit
V
V
V
A
-
10
1
10
A(Pulse)
W
W(Tc
=
25
C)
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
Packaging specifications and h
FE
Type
2SA1952
CPT3
Q
2500
TL
Package
h
FE
Code
Basic ordering unit (pieces)
External dimensions (Units : mm)
2SA1952
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
5.1
Electrical characteristics (Ta = 25
C)
Min.
Typ.
Max.
Unit
Conditions
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
-
5
-
-
-
120
-
-
-
-
-
-
-
-
80
130
-
-
-
10
-
10
-
0.3
270
-
-
V
V
A
A
V
-
MHz
pF
I
C
=
-
50
A
BV
CEO
-
60
-
-
V
I
C
=
-
1mA
I
E
=
-
50
A
V
CB
=
-
100V
V
EB
=
-
5V
I
C
/I
B
=
-
3A/
-
0.15A
-
-
-
0.5
V
I
C
/I
B
=
-
4A/
-
0.2A
V
BE(sat)
-
-
-
1.5
V
I
C
/I
B
=
-
4A/
-
0.2A
-
-
-
1.2
V
I
C
/I
B
=
-
3A/
-
0.15A
h
FE
V
CE
=
-
2V , I
C
=
-
1A
V
CE
=
-
10V , I
E
=
0.5A , f
=
30MHz
V
CB
=
-
10V , I
E
=
0A , f
=
1MHz
ton
-
-
0.3
s
I
C
=
-
3A , R
L
=
10
tstg
-
-
1.5
s
I
B1
=
-
I
B2
=
-
0.15A
tf
-
-
0.3
s
V
CC
-
30V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Collector-base breakdown voltage
Parameter
BV
CBO
Symbol
-
100
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