2SB1689
Transistors
1/2
Genera purpose amplification(
-12V, -1.5A)
2SB1689
Application
Low frequency amplifier
Driver
Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat)
-200mV
at I
C
= -500mA / I
B
= -25mA
External dimensions
(Unit : mm)
Abbreviated symbol : EV
Each terminal has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
( 3
)
0.9
0.7
0.2
0.65
( 2
)
2.0
1.3
( 1
)
0.65
Absolute maximum ratings
(Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
-
15
-
12
-
6
-
1.5
200
150
-
55 to
+
150
-
3
1
Unit
V
V
V
A
A
mW
C
C
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1
Single pulse, P
W
=
1ms
2
Each terminal mounted on a recommended land pattern
Packaging specifications
2SB1689
T106
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping
Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
= -
10V, I
E
=
0A, f
=
1MHz
f
T
-
400
-
MHz
V
CE
= -
2V, I
E
=
200mA, f
=
100MHz
BV
CBO
-
15
-
-
V
I
C
= -
10
A
BV
CEO
-
12
-
-
V
I
C
= -
1mA
BV
EBO
-
6
-
-
V
I
E
= -
10
A
I
CBO
-
-
-
100
nA
V
CB
= -
15V
I
EBO
-
-
-
100
nA
V
EB
= -
6V
V
CE(sat)
-
-
110
-
200
mV
I
C
= -
500mA, I
B
= -
25mA
h
FE
270
-
680
-
V
CE
= -
2V, I
C
= -
200mA
Cob
-
12
-
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
2SB1689
Transistors
2/2
Electrical characteristic curves
Fig.1 DC current gain vs.
collector current
0.001
0.01
0.1
10
100
1000
1
10
PULSED
V
CE
=-
2V
COLLECTOR CURRENT : I
C
(
A)
DC CURRENT GAIN : h
FE
Ta
=
100
C
25
C
-
40
C
Fig.2 Collector-emitter saturation voltage
vs.collector current
Fig.3 Base-emitter saturation voltage
vs.collector current
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
COLLECTOR CURRENT : I
C
(
A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
PULSED
I
C
/I
B
=20
Ta=100C
25C
-
40C
Ta=
-
40C
25C
100C
Fig.4 Collector-emitter saturation
voltage vs. collector current
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I
C
/I
B
=
50
20
10
COLLECTOR CURRENT : I
C
(
A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
PULSED
Ta
=
25
C
Fig.5 Grounded emitter propagation
characteristics
0
0.5
1
0.001
0.1
1
0.01
10
1.5
PULSED
V
CE
=-
2V
BASE TO EMITTER VOLTAGE : V
BE
(V
)
COLLECTOR CURRENT : I
C
(A)
Ta
=
100
C
25
C
-
40
C
Fig.6 Gain bandwidth product
vs. emitter current
0.001
0.01
0.1
10
100
1000
1
10
Ta
=
25
C
V
CE
=-
2V
f
=
100MHz
EMITTER CURRENT : I
E
(
A)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs.emitter-base voltage
0.1
1
1
10
100
10
100
Ta
=
25
C
I
E
=
0mA
f
=
1MHz
COLLECTOR TO BASE VOLTAGE : V
CB
(V
)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Cob
Cib
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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