BC847B / BC847C
Transistors
1/1
NPN General Purpose Transistor
BC847B / BC847C
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Features
1) BV
CEO
< 45V (I
C
=1mA)
2) Complements the BC857B.
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Package, marking, and Packaging specifications
BC847C
SST3
G1G
T116
3000
BC847B
SST3
G1F
T116
3000
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
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External dimensions (Units : mm)
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.2Min.
2.4
0.2
1.3
0.95
0.45
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
All terminals have the same dimensions
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
50
45
6
0.1
0.35
150
-
55~
+
150
Unit
V
V
V
A
P
C
0.2
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power dissipation
When mounted on a 7
5
0.6mm ceramic board.
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Electrical characteristics (Ta=25
C)
Parameter
Min.
Typ.
Max.
Unit
Conditions
50
45
6
-
-
-
-
-
-
-
-
-
-
15
5
V
V
V
A
nA
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
30V
V
CB
=
30V, Ta
=
150
C
-
0.58
-
0.77
V
-
-
0.6
I
C
/I
B
=
100mA/5mA
-
-
0.25
V
I
C
/I
B
=
10mA/0.5mA
V
CE
/I
C
=
5V/10mA
V
CE
/I
C
=
5V/2mA BC847B
200
450
-
-
V
CE
/I
C
=
5V/2mA BC847C
420
800
-
-
-
200
3
-
-
MHz
pF
V
CE
=
5V, I
E
=-
20mA, f
=
100MHz
V
CB
=-
10V, I
E
=
0, f
=
1MHz
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
BE(on)
V
CE(sat)
h
FE
f
T
Cob
Cib
-
8
-
pF
V
EB
=
0.5V, I
C
=
0, f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
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Electrical characteristic curves
The electrical characteristic curves for these products are the same as those of UMT222A, SST222A, MMST2222A and
PN2222A.
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