3
1997 Fairchild Semiconductor Corporation
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1.0
A to 50 mA.
Sourced from Process 07.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
CEO
Collector-Emitter Voltage
BC846 series
BC847 series
65
45
V
V
V
CES
Collector-Base Voltage
BC846 series
BC847 series
80
50
V
V
V
EBO
Emitter-Base Voltage
6.0
V
I
C
Collector Current - Continuous
100
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
*BC846 / BC847
P
D
Total Device Dissipation
Derate above 25
C
325
2.8
mW
mW/
C
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
BC847A
BC847B
BC847C
SOT-23
Mark: 1E. / 1F. / 1G.
C
B
E
C
B
E
BC846A
BC846B
SOT-23
Mark: 1A. / 1B.
*
Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Typical Characteristics
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V
(BR)CEO
Collector-Emitter Breakdown
Voltage
I
C
= 10 mA, I
B
= 0
846A / B
847A / B
65
45
V
V
(BR)CES
Collector-Base Breakdown Voltage
I
C
= 10
A, I
E
= 0
846A / B
847A / B
80
50
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10
A, I
C
= 0
6.0
V
I
CBO
Collector-Cutoff Current
V
CB
= 30 V
V
CB
= 30 V, T
A
= 150
C
15
5.0
nA
A
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 2.0 mA, V
CE
= 5.0 V
846A / 847A
846B / 847B
847C
110
200
420
220
450
800
V
CE(
sat
)
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5.0 mA
0.25
0.6
V
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= 2.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V
0.58
0.70
0.77
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 10 mA, V
CE
= 5.0,
f = 100 MHz
100
MHz
C
obo
Output Capacitance
V
CB
= 10 V, f = 1.0 MHz
4.5
pF
NF
Noise Figure
I
C
= 0.2 mA, V
CE
= 5.0,
R
S
= 2.0 k
, f = 1.0 kHz,
BW = 200 Hz
10
dB
Collector-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLE
C
T
O
R
-
E
M
I
TT
ER
V
O
L
T
A
G
E
(
V
)
C
CE
S
A
T
25 C
- 40 C
125 C
= 10
Typical Pulsed Current Gain
vs Collector Current
0.01
0.03
0.1
0.3
1
3
10
30
100
0
200
400
600
800
1000
1200
I - COLLECTOR CURRENT (mA)
h
-
TYPI
C
A
L PU
L
SED
CUR
REN
T
G
A
I
N
C
FE
125 C
25 C
- 40 C
V = 5.0 V
CE
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
3
BC846A / BC846B / BC847A / BC847B / BC847C
Typical Characteristics
NPN General Purpose Amplifier
(continued)
Input and Output Capacitance
vs Reverse Bias Voltage
0
4
8
12
16
20
0
1
2
3
4
5
REVERSE BIAS VOLTAGE (V)
CAP
AC
I
T
AN
CE (
p
F
)
f = 1.0 MHz
C ob
C te
Wideband Noise Frequency
vs Source Resistance
1,000
2,000
5,000
10,000
20,000
50,000
100,000
0
1
2
3
4
5
R - SOURCE RESISTANCE ( )
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
V = 5.0 V
BANDWIDTH = 15.7 kHz
CE
I = 10
A
C
I = 100
A
C
S
I = 30
A
C
Base-Emitter Saturation
Voltage vs Collector Current
0.1
1
10
100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
C
O
LLEC
T
O
R
-
E
M
I
TT
E
R
V
O
L
T
A
G
E
(
V
)
C
BE
S
A
T
= 10
25 C
- 40 C
125 C
Base-Emitter ON Voltage vs
Collector Current
0.1
1
10
40
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V
-
B
A
S
E
-
E
MI
T
T
E
R
O
N
V
O
L
T
A
G
E
(
V
)
C
BE
O
N
V = 5.0 V
CE
25 C
- 40 C
125 C
Collect or-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
0.1
1
10
T - AMBIE NT TEMP ERATURE ( C)
I
-
C
O
LL
E
C
TO
R
C
U
R
R
E
N
T (
n
A
)
A
CBO
V = 45V
CB
Normalized Collector-Cutoff Current
vs Ambient Temperature
25
50
75
100
125
150
1
10
100
1000
T - AMBIE NT TEMP ERATURE ( C)
C
H
A
R
A
C
TE
R
I
S
T
I
C
S
R
E
LA
TI
V
E
T
O
V
A
LU
E
A
T
T
=
2
5
C
A
A
Contours of Constant Gain
Bandwidth Product (f )
0.1
1
10
100
1
2
3
5
7
10
I - COLLECTOR CURRENT (mA)
V
-
C
O
L
L
E
CT
O
R
V
O
LT
AG
E
(
V
)
C
175 MHz
T
CE
150 MHz
125 MHz
75 MHz
100 MHz
Typical Characteristics
(continued)
Contours of Constant
Narrow Band Noise Figure
1
10
100
1,000
100
200
500
1,000
2,000
5,000
10,000
I - COLLECTOR CURRENT ( A)
R
-
SOU
R
C
E
R
E
SI
ST
ANC
E
(
)
C
S
V = 5.0 V
f = 1.0 kHz
BANDWIDTH
= 200 Hz
CE
6.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
Contours of Constant
Narrow Band Noise Figure
1
10
100
1,000
100
200
500
1,000
2,000
5,000
10,000
I - COLLECTOR CURRENT ( A)
R
-
SO
U
R
C
E
R
E
SI
ST
A
N
C
E (
)
C
S
V = 5.0 V
f = 100 Hz
BANDWIDTH
= 20 Hz
CE
3.0 dB
4.0 dB
8.0 dB
10 dB
12 dB
14 dB
6.0 dB
Contours of Constant
Narrow Band Noise Figure
1
10
100
1000
100
200
500
1000
2000
5000
10000
I - COLLECTOR CURRENT ( A)
R
-
S
O
UR
CE
R
E
SI
S
T
A
N
C
E
(
)
6.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
1.0 dB
C
V = 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
CE
S
Contours of Constant
Narrow Band Noise Figure
0.01
0.1
1
10
100
200
500
1000
2000
5000
10000
I - COLLECTOR CURRENT ( A)
R
-
S
O
U
R
C
E
RES
I
S
T
AN
CE
(
)
7.0 dB
3.0 dB
4.0 dB
8.0 dB
2.0 dB
5.0
dB
C
V =
5.0V
CE
S
f = 1.0 MHz
BANDWIDTH
= 200kHz
6.0
dB
Noise Figure vs Frequency
0.0001
0.001
0.01
0.1
1
10
100
0
2
4
6
8
10
f - FREQUENCY (MHz)
N
F
-
NO
I
S
E
F
I
G
U
RE
(
d
B)
V = 5.0V
CE
I = 200
A,
R = 10 k
C
S
I = 1.0 mA,
R = 500
C
S
I = 100
A,
R = 10 k
C
S
I = 1.0 mA,
R = 5.0 k
C
S
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
3
BC846A / BC846B / BC847A / BC847B / BC847C
NPN General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
(f = 1.0 kHz)
Typical Common Emitter Characteristics
0.1
0.2
0.5
1
2
5
10
20
50
100
0.01
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
CHA
RACT
E
R
I
S
T
I
CS
RE
L
A
T
I
V
E
T
O
V
A
L
U
E
(
I
=
1
mA
)
C
C
f = 1.0kHz
h
oe
h
oe
h and h
ie
h
fe
h
re
h
ie
h
fe
re
Typical Common Emitter Characteristics
-100
-50
0
50
100
150
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - JUNCTIO N TEMP ERATURE ( C)
CH
AR
AC
T
E
R
I
S
T
I
C
S
R
E
L
A
T
I
V
E
T
O
V
A
L
U
E
(
T
=
2
5
C)
J
A
h
oe
h
re
h
ie
h
fe
h
oe
h
re
h
ie
h
fe
V = 5.0V
f = 1.0kHz
I = 1.0mA
CE
C
Typical Common Emitter Characteristics
0
5
10
15
20
25
0.8
0.9
1
1.1
1.2
1.3
1.4
V - COLLECTOR VOLTAGE (V)
C
H
A
R
A
C
T
ER
I
S
T
I
C
S
R
E
L
A
T
I
VE
T
O
V
A
L
U
E(
V
=
5
V)
CE
CE
I = 1.0mA
f = 1.0kHz
T = 25 C
C
A
h
oe
h
oe
h
re
h
ie
h
fe
h
re
h
ie
h
fe
PDF 
ZIP