BR9080 / BR9080F / BR9080RFV /
Memory ICs
BR9016 / BR9016F / BR9016RFV
8k, 16k bit EEPROMs for direct
connection to serial ports
BR9080 / BR9080F / BR9080RFV /
BR9016 / BR9016F / BR9016RFV
The BR9080 and BR9016 series are serial EEPROMs that can be connected directly to a serial port and can be erased
and written electrically. Writing and reading is performed in word units, using four types of operation commands.
Communication occurs though CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling
these EEPROMs to be used as one-time ROMs. During writing, operation is checked via the internal status check.
Applications
Movie, camera, cordless telephones, car stereos, VCRs, TVs, DIP switches, and other battery-powered equipment
requiring low voltage and low current
Features
1) BR9080 / F / RFV (8k bit): 512 words
16 bits
BR9016 / F / RFV (16k bit): 1024 words
16bits
2) Single power supply operation
3) Serial data input and output
4) Automatic erase-before-write
5) Low current consumption
Active (5V) : 5mA (max.)
Standby (5V) : 3
A (max.)
6) Noise filter built into SK pin
7) Write protection when V
CC
is low
8) Compact DIP8 / SOP8 / SSOP-B8 packages
9) High reliability CMOS process
10) 100,000 ERASE / WRITE cycles
11) 10 years Data Retention
Block diagram
16bit
16bit
9bit
8,192 bit
EEPROM
CS
R / B
WC
SK
DI
DO
9bit
INSTRUCTION DECODE
CONTROL
CLOCK GENERATION
WRITE
DISABLE
DETECT
SUPPLY
VOLTAGE
HIGH
VOLTAGE
GENERATOR
ADD
DECORDER
R / W
AMPS
ADD
BUFFER
INSTRACTION
REGISTER
DATA
REGISTER
BR9080 / BR9080F / BR9080RFV /
Memory ICs
BR9016 / BR9016F / BR9016RFV
Pin descriptions
Fig.1
CS
SK
R / B
V
CC
WC
GND
DO
DI
BR9016F : SOP8
CS
SK
DI
DO
V
CC
R / B
WC
GND
BR9016 : DIP8
CS
SK
DI
DO
V
CC
R / B WC GND
BR9016RFV : SSOP8
3
4
5
6
7
8
1
2
1
2
3
4
5
6
7
8
CS
SK
DI
DO
GND
WC
R / B
V
CC
DIP / SSOP
SOP
Pin No.
Pin name
Chip Select Control
Serial Data Clock Input
Op code, address, Serial Data Input
Ground 0V
Write Control Input
READY / BUSY Output
Power supply
Serial Data Output
Function
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Limits
Unit
-
0.3
+
7.0
V
mW
DIP8
SOP8
SSOP-B8
500
1
350
2
300
3
-
65
+
125
C
-
40
+
85
C
V
CC
Pd
Tstg
Topr
-
-
0.3
V
CC
+
0.3
V
1 Reduced by 5.0mW for each increase in Ta of 1
C over 25
C.
2 Reduced by 3.5mW for each increase in Ta of 1
C over 25
C.
3 Reduced by 3.0mW for each increase in Ta of 1
C over 25
C.
Supply voltage
Power dissipation
Storage temperature
Operation temperature
Input voltage
Recommended operating conditions (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
CC
-
5.5
V
2.7
-
5.5
V
V
IN
0
-
V
CC
V
2.7
Power supply voltage
WRITE
READ
Input voltage
BR9080 / BR9080F / BR9080RFV /
Memory ICs
BR9016 / BR9016F / BR9016RFV
Electrical characteristics
BR9080 / F / RFV, BR9016 / F / RFV: 5V (Unless otherwise noted, Ta=
-
40
85
C, V
CC
=2.7V
5.5V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
IL1
-
-
0.3
V
CC
V
IH1
V
IL2
V
IH2
0.7
V
CC
-
0.8
V
CC
-
-
-
-
0.2
V
CC
-
-
V
OL
0
-
0.4
I
OL
=2.1mA
V
OH
V
CC
-
0.4
-
V
CC
I
OH
=
-
0.4mA
DI pin
DI pin
CS, SK, WC pin
CS, SK, WC pin
I
LI
-
1
-
V
IN
=0V
V
CC
I
LO
-
1
-
-
-
-
-
I
CC1
-
5
I
CC2
-
3
I
SB
f
SK
-
-
3
2
V
V
V
V
V
V
A
A
mA
mA
A
MHz
1
1
V
OUT
=0V
V
CC
, CS=V
CC
CS / SK / DI / WC=V
CC
DO, R / B=OPEN
f
SK
=2MHz tE / W=10ms (WRITE)
f
SK
=2MHz (READ)
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage
Output high level voltage
Input leak current
Output leak current
Consumption current
during operation
Standby current
SK frequency
BR9080 / F / RFV, BR9016 / F / RFV: 3V (Unless otherwise noted, Ta=
-
40
85
C, V
CC
=2.7V
5.5V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
IL1
-
-
0.3
V
CC
V
IH1
V
IL2
V
IH2
0.7
V
CC
-
0.8
V
CC
-
-
-
-
0.2
V
CC
-
-
V
OL
0
-
0.4
I
OL
=100
A
V
OH
V
CC
-
0.4
-
V
CC
I
OH
=
-
100
A
DI pin
DI pin
CS, SK, WC pin
CS, SK, WC pin
I
LI
-
1
-
V
IN
=0V
V
CC
I
LO
-
1
-
-
-
-
-
I
CC1
-
3
I
CC2
-
750
I
SB
f
SK
-
-
2
2
V
V
V
V
V
V
A
A
mA
A
A
MHz
1
1
V
OUT
=0V
V
CC
, CS=V
CC
CS / SK / DI / WC=V
CC
DO, R / B=OPEN
f
SK
=2MHz tE / W=10ms (WRITE)
f
SK
=2MHz (READ)
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage
Output high level voltage
Input leak current
Output leak current
Consumption current
during operation
Standby current
SK frequency
Not designed for radiation resistance
BR9080 / BR9080F / BR9080RFV /
Memory ICs
BR9016 / BR9016F / BR9016RFV
Operating timing characteristics
BR9080 / F / RFV, BR9016 / F / RFV (Unless otherwise noted, Ta=
-
40
85
C, V
CC
=2.7V
5.5V)
Parameter
Symbol
Min.
Typ.
Max.
Unit
f
CSS
100
-
-
ns
t
CSH
100
-
-
ns
t
WCH
100
-
-
ns
t
DIS
100
-
-
ns
t
DIH
-
-
150
ns
t
PD1
-
-
150
ns
t
PD0
-
-
10
ms
t
E / W
250
-
-
ns
t
CS
-
-
150
ns
t
SV
0
-
150
ns
t
OH
250
-
-
ns
t
WH
250
-
-
ns
t
WL
0
-
-
ns
0
-
-
ms
t
WCS
CS setup time
Time when DO goes HIGH-Z (via CS)
Data clock high level time
Write control hold time
Data setup time
Data hold time
DO rise delay time
DO fall delay time
Self-timing programming cycle
CS minimum high level time
READY / BUSY display valid time
CS hold time
Data clock low level time
Write control setup time
Timing chart
Synchronous Data Input Output Timing
CS
SK
DI
DO
WC
t
DIS
t
DIH
t
CSS
t
PD
t
OH
t
CSH
t
CS
t
PD
t
WL
t
WH
Input data are clocked in to DI at the rising edge of the clock (SK).
Output data will toggle on the falling edge of the SK clock.
The WC pin does not have any effect on the READ, EWEN and EWDS operations.
Fig.2
BR9080 / BR9080F / BR9080RFV /
Memory ICs
BR9016 / BR9016F / BR9016RFV
Circuit operation
(1) Command mode
BR9080
1010
100 A0
A1 A2 A3 A4 A5 A6 A7 A8
A1 A2 A3 A4 A5 A6 A7 A8
1010
010 A0
1010
0011
D0 D1
-
D14 D15
1010
0000
Read (READ)
Write (WRITE)
Erase / Write enable (EWEN)
Erase / Write disable (EWDS)
: Means either V
IH
or V
IL
Address and data are transferred from LSB.
Instruction
Start Bit
Op Code
Address
Data
BR9016
1010
10 A0 A1
A2 A3 A4 A5 A6 A7 A8 A9
A2 A3 A4 A5 A6 A7 A8 A9
1010
01 A0 A1
1010
0011
D0 D1
-
D14 D15
1010
0000
Read (READ)
Write (WRITE)
Erase / Write enable (EWEN)
Erase / Write disable (EWDS)
: Means either V
IH
or V
IL
Address and data are transferred from LSB.
Instruction
Start Bit
Op Code
Address
Data
(2) Writing enabled / disabled
High or LOW
Fig.3
1
1
HIGH-Z
H
SK
CS
DI
DO
R / B
WC
L
H
L
H
L
H
0
1
0
0
0
4
8
ENABLE
=
11
DISABLE
=
00
12
16
1) When CS is "HIGH" during power up, BR9080 / F / RFV, BR9016 / F / RFV comes up in the erase / write disabled
(EWDS) state. In order to be programmable, it must receive an enable (EWEN) instruction.
The device remains programmable until a disable (EWDS) instruction is entered, or until it is powered down.
2) It is unnecessary to add the clock after 16th clock.
PDF 
ZIP