DTA144TM / DTA144TE / DTA144TUA
Transistors
DTA144TKA / DTA144TSA
Digital transistors (built-in resistor)
DTA144TM / DTA144TE / DTA144TUA /
DTA144TKA / DTA144TSA
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Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making device design easy.
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Structure
NPN digital transistor (Built-in resistor type)
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Equivalent circuit
R
1
B
E
C
B : Base
C : Collector
E : Emitter
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External dimensions (Units : mm)
ROHM : VMT3
DTA144TM
(1) Base
(2) Emitter
(3) Collector
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
Abbreviated symbol : 96
0.2
0.2
0.5
0.5
1.0
0.1
1.6
0.2
0.3
0.8
0.1
1.6
0.2
0.55
0.1
0.7
0.1
0.15
0.05
0.1Min.
(3)
(2)
(1)
0~0.1
-
0.05
+
0.1
+
0.1
-
0.05
+
0.1
-
0.05
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
Abbreviated symbol : 96
DTA144TE
3
0.2
(15Min.)
4
0.2
2
0.2
0.45
0.5
0.45
5
(1) (2) (3)
-
0.05
+
0.15
+
0.15
-
0.05
2.5
+
0.4
-
0.1
3Min.
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
DTA144TSA
0
~0.1
2.8
0.2
1.6
0.3Min.
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 96
ROHM : SMT3
EIAJ : SC-59
DTA144TKA
All terminals have same dimensions
0~0.1
(2)
(1)
(3)
0.1Min.
2.1
0.1
1.25
0.1
0.9
0.1
0.2
0.7
0.1
0.15
0.05
0.3
2.0
0.2
1.3
0.1
0.65 0.65
+
0.1
-
0
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 96
ROHM : UMT3
EIAJ : SC-70
DTA144TUA
All terminals have same dimensions
DTA144TM / DTA144TE / DTA144TUA
Transistors
DTA144TKA / DTA144TSA
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
-
50
-
50
-
5
-
100
150
200
300
150
-
55~
+
150
E
M
UA
KA
SA
V
V
mA
mW
C
C
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Unit
Limits(DTA144T )
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
f
T
Min.
-
50
-
50
-
5
-
-
100
-
32.9
-
-
I
C
=-
50
A
I
C
=-
1mA
I
E
=-
50
A
V
CB
=-
50V
V
EB
=-
4V
V
CE
=-
5V, I
C
=-
1mA
I
C
/I
B
=-
5mA/
-
0.5mA
V
CE
=-
10V, I
E
=
5mA, f
=
100MHz
-
-
-
-
-
250
-
47
250
Typ.
-
-
-
-
0.5
-
0.5
600
-
0.3
61.1
-
Max.
V
V
V
A
A
-
V
k
MHz
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Transition frequency of the device
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Packaging specifications
TL
UMT3
EMT3
SMT3
DTA144TE
Type
DTA144TUA
DTA144TM
3000
T106
3000
T146
3000
DTA144TKA
T2L
VMT3
8000
-
-
-
-
SPT
TP
5000
DTA144TSA
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
Packaging type
Taping
Taping
Taping
Taping
Taping
Code
Basic ordering
unit (pieces)
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Electrical characteristic curves
V
CE
=-
5V
-
100
-
1m
-
10m
-
200
-
2m
-
20m
-
500
-
5m
-
50m
-
100m
1k
500
200
100
50
20
10
5
2
1
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs.collector
current
Ta
=
100
C
25
C
-
40
C
l
C
/l
B
=
10
-
10
-
100
-
1m
-
20
-
200
-
2m
-
50
-
500
-
5m
-
10m
Ta
=
100
C
25
C
-
40
C
-
500m
-
200m
-
100m
-
50m
-
20m
-
10m
-
5m
-
2m
-
1m
-
1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.2 Collector-emitter saturation
voltage vs.collector current
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