DTC115EM / DTC115EE / DTC115EUA
Transistors
DTC115EKA / DTC115ESA
Digital transistors (built-in resistors)
DTC115EM / DTC115EE / DTC115EUA
DTC115EKA / DTC115ESA
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Features
1) Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors (see the equivalent
circuit).
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input, and parasitic
effects are almost completely eliminated.
3) Only the on/off conditions need to be set for operation, making
device design easy.
4) Higher mounting densities can be achieved.
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Structure
NPN digital transistor (with built-in resistors)
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Equivalent circuit
OUT
GND
IN
R
1
R
2
OUT
IN
GND
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External dimensions (Units : mm)
3
0.2
(15Min.)
4
0.2
2
0.2
0.45
0.5
0.45
5
(1) (2) (3)
-
0.05
+
0.15
+
0.15
-
0.05
2.5
+
0.4
-
0.1
3Min.
(1) GND
(2) OUT
(3) IN
ROHM : SPT
EIAJ : SC-72
DTC115ESA
(1) IN
(2) GND
(3) OUT
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
ROHM : VMT3
DTC115EM
Abbreviated symbol : 29
0~0.1
(2)
(1)
(3)
0.1Min.
2.1
0.1
1.25
0.1
0.9
0.1
0.2
0.7
0.1
0.15
0.05
0.3
2.0
0.2
1.3
0.1
0.65 0.65
+
0.1
-
0
(1) GND
(2) IN
(3) OUT
ROHM : UMT3
EIAJ : SC-70
DTC115EUA
All terminals have same dimensions
Abbreviated symbol : 29
0.2
0.2
0.5
0.5
1.0
0.1
1.6
0.2
0.3
0.8
0.1
1.6
0.2
0.55
0.1
0.7
0.1
0.15
0.05
0.1Min.
(3)
(2)
(1)
0~0.1
-
0.05
+
0.1
+
0.1
-
0.05
+
0.1
-
0.05
(1) GND
(2) IN
(3) OUT
ROHM : EMT3
DTC115EE
Abbreviated symbol : 29
0~0.1
2.8
0.2
1.6
0.3Min.
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
(1) GND
(2) IN
(3) OUT
ROHM : SMT3
EIAJ : SC-59
DTC115EKA
All terminals have same dimensions
Abbreviated symbol : 29
DTC115EM / DTC115EE / DTC115EUA
Transistors
DTC115EKA / DTC115ESA
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CC
V
I
I
O
I
C(Max.)
Pd
Tj
Tstg
Limits
50
-
10~
+
40
20
100
150
200
300
DTC115EM / DTC115EE
DTC115EUA / DTC115EKA
DTC115ESA
150
-
55~
+
150
Unit
V
V
mA
mW
C
C
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
I(off)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
-
-
-
-
82
-
70
-
0.1
-
-
-
250
100
0.5
0.3
0.15
0.5
-
-
130
V
V
mA
A
-
MHz
k
V
CC
=
5V, I
O
=
100
A
V
I(on)
3
-
-
V
O
=
0.3V, I
O
=
1mA
I
O
=
5mA, I
I
=
0.25mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
I
O
=
5mA, V
O
=
5V
V
CE
=
10V, I
E
=-
5mA, f
=
100MHz
-
R
2
/R
1
0.8
1
1.2
-
-
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Transition frequency of the device.
Resistance ratio
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Package, marking, and packaging specifications
Type
DTC115EE
EMT3
29
TL
3000
DTC115EM
VMT3
29
T2L
8000
DTC115EUA
UMT3
29
T106
3000
DTC115EKA
SMT3
29
T146
3000
DTC115ESA
SPT
-
TP
5000
Package
Marking
Packaging code
Basic ordering unit (pieces)
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