EMF22 / UMF22N
Transistors
1/4
Power management (dual transistors)
EMF22 / UMF22N
2SC5585 and DTC114E are housed independently in a EMT6 or UMT6 package.
External dimensions (Units : mm)
Application
Power management circuit
Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
Structure
Silicon epitaxial planar transistor
Equivalent circuits
R
1
=10k
R
2
=10k
R
1
R
2
DTr2
Tr1
(1)
(2)
(3)
(4)
(5)
(6)
ROHM : EMT6
EMF22
ROHM : UMT6
EIAJ : SC-88
UMF22N
Abbreviated symbol :F22
Abbreviated symbol : F22
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0 to 0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
Packaging specifications
Type
UMF22N
UMT6
F22
TR
3000
Package
Marking
Code
Basic ordering unit(pieces)
EMF22
EMT6
F22
T2R
8000
EMF22 / UMF22N
Transistors
2/4
Absolute maximum ratings (Ta=25
C)
Tr1
Parameter
1 Single pulse P
W
=1ms
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
500
150(TOTAL)
150
-
55~
+
150
1.0
1
2
Unit
V
V
V
mA
A
mW
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
DTr2
Parameter
1 Characteristics of built-in transistor.
2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
Symbol
V
CC
V
IN
I
C
I
O
P
C
Tj
Tstg
Limits
50
-
10~
+
40
100
50
150(TOTAL)
150
-
55~
+
150
1
2
Unit
V
V
mA
mA
mW
C
C
Supply voltage
Input voltage
Collector current
Output current
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics (Ta=25
C)
Tr1
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
Transition frequency
f
T
-
320
-
MHz
V
CE
=
2V, I
E
=-
10mA, f
=
100MHz
BV
CEO
12
-
-
V
I
C
=
1mA
Collector-emitter breakdown voltage
BV
CBO
15
-
-
V
I
C
=
10
A
Collector-base breakdown voltage
BV
EBO
6
-
-
V
I
E
=
10
A
Emitter-base breakdown voltage
I
CBO
-
-
100
nA
V
CB
=
15V
Collector cut-off current
I
EBO
-
-
100
nA
V
EB
=
6V
Emitter cut-off current
V
CE(sat)
-
90
250
mV
I
C
=
200mA, I
B
=
10mA
Collector-emitter saturation voltage
h
FE
270
-
680
-
V
CE
=
2V, I
C
=
10mA
DC current gain
Cob
-
7.5
-
pF
Collector output capacitance
DTr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
f
T
-
10
13
7
-
MHz
V
CE
=
10V, I
E
=-
5mA, f
=
100MHz
V
I(off)
-
-
0.5
V
V
CC
=
5V, I
O
=
100
A
V
I(on)
3
-
-
V
O
=
0.3V, I
O
=
10mA
V
O(on)
-
0.1
0.3
V
I
O
/I
I
=
10mA/0.5mA
I
I
-
-
0.88
mA
V
I
=
5V
I
O(off)
-
-
0.5
A
V
CC
=
50V, V
I
=
0V
R
1
1
k
-
G
I
30
-
-
-
V
O
=
5V, I
O
=
5mA
-
R
2
/R
1
0.8
250
1.2
-
Transition frequency
Transition frequency of the device
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
EMF22 / UMF22N
Transistors
3/4
Electrical characteristic curves
Tr1
0
1
100
1000
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(mA)
1.4
1.0
1.2
0.4
0.6
0.8
0.2
V
CE
=
2V
Pulsed
Ta
=
125
C
Ta
=
25
C
Ta
=
-
40
C
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.2
DC current gain vs.
collector current
1
DC CURRENT GAIN : h
FE
10
1000
100
Ta
=
125
C
Ta
=-
40
C
Ta
=
25
C
V
CE
=
2V
Pulsed
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.3
Collector-emitter saturation voltage
vs. collector current (
)
1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
10
1000
100
Ta
=
25
C
Pulsed
I
C
/I
B
=
50
I
C
/I
B
=
20
I
C
/I
B
=
10
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.4
Collector-emitter saturation voltage
vs. collector current (
)
1
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
10
1000
100
Ta
=
25
C
Ta
=-
40
C
Ta
=
125
C
I
C
/I
B
=
20
Pulsed
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.5
Base-emitter saturation voltage
vs. collector current
10
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
100
10000
1000
Ta
=
25
C
Ta
=-
40
C
Ta
=
125
C
I
C
/I
B
=
20
Pulsed
1
10
100
1000
EMITTER CURRENT : I
E
(mA)
Fig.6
Gain bandwidth product
vs. emitter current
1
TRANSITION FREQUENCY : f
T
(MHz)
10
1000
100
V
CE
=
2V
Ta
=
25
C
Pulsed
1
10
100
0.1
1
10
100
1000
Ta
=
25
C
f
=
1MHz
I
E
=
0A
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7
Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Cib
Cob
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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