N-Channel Logic Level E nhancement Mode Field E ffect Transistor
ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted)
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Case
Thermal R esistance, Junction-to-Ambient
R
JC
R
JA
2
62.5
/W
C
/W
C
30
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
V
-Pulsed
I
D
65
A
I
DM
195
A
Drain-S ource Diode Forward Current
I
S
65
A
Maximum Power Dissipation
P
D
W
Operating and S torage Temperature R ange
T
J
, T
S TG
-65 to 175
C
@ Tc=25 C
Derate above 25 C
75
0.5
W/ C
Drain Current-Continuous @ TJ=125 C
a
S
G
D
S DB S E R IE S
TO-263(DD-PAK)
G
S
D
S DP S E R IE S
TO-220
S
D
G
4
1
P R ODUC T S UMMAR Y
V
DS S
I
D
30V
65A
8 @ V
G S
= 10V
12 @ V
G S
= 4.5V
S DP /B 65N03L
F E AT UR E S
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
S amHop Microelectronics C orp.
20
R
DS (on) ( m
W
) T Y P
S eptember , 2002
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
24V, V
GS
0V
=
=
10
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
1
1.5
3
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
=
10V, I
D
=
26A
8
9
V
GS
=
4.5V, I
D
=
21A
15
On-State Drain Current
I
D(ON)
V
DS
= 10V, V
GS
= 10V
65
38
A
S
Forward Transconductance
FS
g
V
DS
=
10V, I
D
=
26A
DYNAMIC CHAR ACTER ISTICS
b
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
1350
P
F
625
P
F
P
F
190
SWITCHING CHAR ACTER ISTICS
b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V,
I
D
= 1A,
V
GS
= 10V
R
GEN
= 6
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 65A,
V
GS
=10V
nC
nC
nC
C
30
Fall Time
4
41
6.9
5.8
2
12
S DP /B 65N03L
32
132
30
m ohm
m ohm
ohm
50
nC
V
DS
=10V, I
D
=65A,V
GS
=10V
V
DS
=10V, I
D
=65A,V
GS
=4.5V
20.5 24.5
25 C
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is =26A
0.9
1.3
V
a
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
F igure 3. C apacitance
V
DS
, Drain-to S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
V
DS
, Drain-to-S ource Voltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
80
70
60
50
40
30
20
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
G S
=10,9,8,7,6,5V
V
G S
=4V
4
3
S DP /B 65N03L
V
G S
=3V
C iss
C oss
C rss
3600
3000
2400
1800
1200
600
0
0
5
10
15
20
25
30
20
15
10
5
0
1
2
3
4
5
6
25
T
J
=125 C
-55 C
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100
125
T j( C )
-25
25
75
V
G S
=10V
I
D
=26A
F igure 4. On-R esistance Variation with
Temperature
D
r
a
i
n
-
S
o
u
r
c
e
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
with T emperature
F igure 6. B reakdown V oltage V ariation
F igure 5. G ate T hres hold V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 7. T rans conductance V ariation
with Drain C urrent
I
DS
, Drain-S ource C urrent (A)
F igure 10. Maximum S afe
O perating Area
V
DS
, Drain-S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
4
50
40
30
20
10
0
0
10
20
30
40
V
DS
=10V
50
10
1.0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
200
100
300
10
1
0.5
0.1
1
10
30
60
R
DS
(O
N)
Lim
it
V
G S
=10V
S ingle P ulse
Tc=25 C
10m
s
100
ms
1ms
100
s
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
F igure 9. G ate C harge
Qg, T otal G ate C harge (nC )
10
0
2
4
6
8
0
6
12
18
30
24
36
42
48
V
DS
=10V
I
D
=65A
4
DC
S DP /B 65N03L
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125
V
DS
=V
G S
I
D
=250uA
-50 -25
0
25
50
75 100 125
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
4
INVE R TE D
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
2
1
0.1
0.01
0.01
0.1
1
10
100
1000
10000
P
DM
t
1
t
2
S quare Wave P ulse Duration (msec)
F igure 13. Normalized T hermal T ransient Impedance C urve
1. R
J C
(t)=r (t) * R
J C
2. R
J C
=S ee Datasheet
3. T
J M-
T
C
= P * R
J C
(t)
4. Duty C ycle, D=t1/t2
r
(
t
)
,
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
D=0.5
0.2
0.1
0.05
0.02
0.01
S ingle P ulse
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
5
S DP /B 65N03L
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