N-Channel Logic Level Enhancement Mode Field Effect Transistor
TO-252 and TO-251 Package.
ABSOLUTE MAXIMUM RATINGS (T
C
=25 C unless otherwise noted)
SamHop Microelectronics Corp.
1
PRODUCT SUMMARY
V
DSS
I
D
R
DS(ON) (m
W
) TYP
30V
30A
11.5 @ V
GS
= 10V
FEATURES
Super high dense cell design for low R
DS(ON
).
Rugged and reliable.
S
G
D
SDU SERIES
TO-252AA(D-PAK)
SDD SERIES
TO-251(l-PAK)
G
G
S
S
D
D
SDU/D30N03L
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
3
50
R
JA
/W
C
/W
C
30
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
V
-Pulsed
30
I
D
A
90
I
DM
A
Drain-Source Diode Forward Current
30
I
S
A
Maximum Power Dissipation
P
D
W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 175
C
@Tc=25 C
Derate above 25 C
50
0.3
W/ C
Drain Current-Continuous @TJ=125 C
a
20
JULY, 2002
17 @ V
GS
= 4.5V
SDU/D30N03L
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250uA
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24V, V
GS
= 0V
10
Gate-Body Leakage
I
GSS
V
GS
= +/-20V, V
DS
= 0V
nA
ON CHARACTERISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250uA
1
1.5
11.5
17
3
V
Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=15A
V
GS
= 4.5V, I
D
= 12A
14
21
On-State Drain Current
I
D(ON)
V
DS
= 10V, V
GS
= 10V
40
30
A
S
Forward Transconductance
FS
g
V
DS
= 10V, I
D
= 20A
DYNAMIC CHARACTERISTICS
b
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DD
=15V, V
GS
= 0V
f = 1.0MH
Z
P
F
P
F
P
F
SWITCHING CHARACTERISTICS
b
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall time
V
DD
= 15V,
I
D
=1A,
V
GS
= 10V,
R
GEN
= 6
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= 15V, I
D
= 15A,
V
GS
=10V
nC
nC
nC
2
34.4
5.1
7.7
1200
530
150
5
65
67
90
m ohm
m ohm
ohm
+/-100
uA
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is = 25A
1.3
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current(A)
C
,
Capacitance (pF)
Dr
ain-Source
, On-Resistance
I
D
, Dr
ain Current (A)
I
D
, Dr
ain Current (A)
3
R
DS(ON)
, Nor
maliz
ed
SDU/D30N03L
6
0 5 10 15 20 25 30
3000
2500
2000
1500
1000
500
0
60
50
40
30
20
10
0
0
1
2
3
4
5
6
-55 C
25 C
40
30
20
10
0
0
1
2
3
4
5
6
Tj=125 C
1.3
1.2
1.1
1.0
0.9
0.8
0.7
25 C
Tj=125 C
-55 C
0
10
20
30
40
V
GS
=10V
V
GS
=3V
V
GS
=10,9,8,7,6,5,4V
Ciss
Coss
Crss
SDU/D30N03L
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Vth, Normalized
Gate-Source Threshold Voltage
g
FS
, Transconductance (S)
V
GS
, Gate to Source Voltage (V)
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Is, Source-drain current (A)
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
, Drain Current (A)
4
6
40
10
0.1
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250uA
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
ID=250uA
40
30
20
10
50
60
0
0
5
10
15
20
V
DS
=10V
10
8
6
4
2
0
0
5
10
15 20
25
30
35
40
V
DS
=15V
I
D
=20A
300
200
100
10
0.5
0.1
1
1
10
30
60
V
GS
=10V
Single Pulse
Tc=25 C
R
DS
(ON) Limit
DC
1s
100ms
10ms
1ms
Figure 11. Switching Test Circuit
Figure 12. Switching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULSE WIDTH
Transient Thermal Impedance
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
r(t),Normalized Effective
5
6
SDU/D30N03L
INVERTED
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
D=0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
1. R
c
JA
(t)=r (t) * R
c
JA
2. R
c
JA
=See Datasheet
3. T
JM-
T
A
= P
DM
* R
c
JA
(t)
4. Duty Cycle, D=t
1
/t
2
SINGLE PULSE
V
DD
R
D
V
V
R
S
V
G
GS
IN
GEN
OUT
L
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