N-Channel Logic Level Enhancement Mode Field Effect Transistor
TO-252 and TO-251 Package.
ABSOLUTE MAXIMUM RATINGS (T
C
=25 C unless otherwise noted)
SamHop Microelectronics Corp.
Feb.01 2005 ver1.3
1
PRODUCT SUMMARY
V
DSS
I
D
R
DS(ON) ( m
W
)
20V
18A
40 @ V
GS
= 10V
45 @ V
GS
= 4.5V
FEATURES
Super high dense cell design for low R
DS(ON
).
Rugged and reliable.
S
G
D
STU SERIES
TO-252AA(D-PAK)
STD SERIES
TO-251(l-PAK)
G
G
S
S
D
D
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
3
50
R
JA
/W
C
/W
C
20
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
12
V
GS
V
-Pulsed
18
I
D
A
30
I
DM
A
Drain-Source Diode Forward Current
15
I
S
A
Maximum Power Dissipation
P
D
W
Operating and StorageTemperature Range
T
J
, T
STG
-55 to 175
C
@Tc=25 C
50
Drain Current-Continuous @T
C
=25 C
a
Max
STU/D3055L2
S T U/D3055L2
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
20
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
16V, V
GS
0V
=
=
1
uA
Gate-Body Leakage
I
GSS
V
GS
12V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
0.7
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
10V, I
D
6.0A
40
V
GS
4.5V, I
D
5.2A
45
On-State Drain Current
I
D(ON)
V
DS
= 5V, V
GS
= 4.5V
A
S
Forward Transconductance
FS
g
V
DS
10V, I
D
6.0A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=8V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= 1A,
V
GEN
= 4.5V,
R
L
= 10
ohm
R
GEN
= 6
ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 6A,
V
GS
=10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
m-ohm
m-ohm
V
DS
=10V,I
D
=6A,V
GS
=10V
V
DS
=10V,I
D
=6A,V
GS
=4.5V
nC
1.8
7
614
151
116
22.1
16.7
18.9
8.9
2.1
2.4
15
1.2
14.3
11.9
25
30
S T U/D3055L2
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is =10A
1
1.3
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 1. Output C haracteristics
F igure 4. On-R esistance Variation with
Temperature
V
DS
, Drain-to-S ource Voltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
a.Surface Mounted on FR 4 Board, t 10sec.
5
10
8
6
4
2
0
0
2
4
6
8
10
12
3
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100
125
T j( C )
-25
25
75
V
G S
=10V
I
D
=6A
V
G S
=2V
V
G S
=10,9,8,7,6,5,4,3V
F igure 2. Transfer C haracteristics
V
G S
, G ate-to-S ource Voltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
25 C
25
20
15
10
5
0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
T j=125 C
-55 C
F igure 3. C apacitance
V
DS
, Drain-to S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
0 4 8 12 16 20 24
C iss
C oss
1250
1000
750
500
250
0
C rss
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
(
N
o
r
m
a
l
i
z
e
d
)
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 7. T rans conductance V ariation
with Drain C urrent
I
DS
, Drain-S ource C urrent (A)
F igure 9. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 10. Maximum S afe
O perating Area
V
DS
, Drain-S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
20
16
12
8
24
0
0
5
10
15
20
25
4
V
DS
=10V
20
10
0
1
0.4
0.6
0.8
1.0
1.2
1.4
8
10
6
4
2
0
0
2
4 6
8
10 12 14 16
V
DS
=10V
I
D
=6A
T
J
=25 C
40
10
1 1
0.1
0.03
0.1
1
10 20
50
10m
s
100
ms
1s
DC
V
G S
=4.5V
S ingle P ulse
Tc=25 C
4
-50 -25
0
25
50
75 100 125
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125
V
DS
=V
G S
I
D
=250uA
S T U/D3055L2
R
DS
(ON
) Li
mit
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
S quare Wave P ulse Duration (sec)
F igure 13. Normalized T hermal T ransient Impedance C urve
r
(
t
)
,
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
5
6
S TU/D3055L2
INVE R TE D
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
D=0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
1. R
J A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
S ING LE P ULS E
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
5
35
9
3
95
05
7
41
7
85
30
3
84
0.94
3
3
4
5
9
3
9
1
6.00
0
36
4
9.70
1
82
398
1.425
1.625
56
0.064
0.650
0.850
6
33
L2
0.600
0.024
REF.
REF.
2.29
BSC
0.090
BSC
6
S T U/D3055L2
TO-252
TO-252 Carrier Tape
TO-252 Reel
Tape and Reel Data
UNIT:
PACKAGE
TO-252
(16 )
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
6.80
0.1
10.3
0.1
2.50
0.1
2
1.5
+ 0.1
- 0
16.0
0.3
1.75
0.1
7.5
0.15
8.0
0.1
4.0
0.1
2.0
0.15
0.3
0.05
UNIT:
TAPE SIZE
16
REEL SIZE
330
M
N
W
T
H
K
S
G
R
V
330
0.5
97
1.0
17.0
+ 1.5
- 0
2.2
13.0
+ 0.5
- 0.2
10.6
2.0
0.5
S
7
S T U/D3055L2
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