20
Dual N-Channel E nhancement Mode Field E ffect Transistor
S urface Mount Package.
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
12
V
Drain Current-Continuous
-Pulsed
I
D
6
24
1.7
1.5
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
R
JA
85
/W
C
b
S amHop Microelectronics C orp.
Dec,29.2005
1
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) Max
20V
6A
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
26 @ V
G S
= 4.0V
S T G 8209
40 @ V
G S
= 2.5V
E S D Protected.
(T OP V IE W)
T S S OP
1
G
2
S
2
S
2
D
1
/D
2
G
1
S
1
S
1
D
1
/D
2
2
3
4
8
7
6
5
G
1
D
1
S
1
G
2
D
2
S
2
a
a
a
a
a
S T G 8209
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
20
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
16V, V
GS
0V
=
=
1
uA
Gate-Body Leakage
I
GSS
V
GS
12V,V
DS
0V
=
=
10
uA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
0.5
V
Drain-Source On-State R esistance
R
DS(ON)
c
C
2
m ohm
V
GS
4.0V, I
D
5A
=
=
26
FS
c
S
Forward Transconductance
g
V
DS
5V, I
D
5A
DYNAMIC CHAR ACTER ISTICS
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=8V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 10V,
I
D
= 1A,
V
GEN
= 4.0V,
R
GEN
= 10
ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=10V, I
D
= 5A,
V
GS
=4.0V
nC
nC
nC
Fall Time
=
=
V
GS
2.5V, I
D
3A
=
=
m ohm
40
22
1.5
0.8
19
693
136
189
31
62
4.9
1.8
11
96
40
30
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0 V, Is = 1.7A
1.2
V
b
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
I
D
, Drain C urrent (A)
V
G S
, G ate-to-S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
3
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
S TG 8209
60
50
40
30
20
10
0
15
12
9
6
0
0
0.5
1.0
1.5
2.0
2.5
3.0
25
125
0.8
T j( C )
100
50
75
T j, J unction T emperature ( C )
F igure 1. Output C haracteristics
V
DS
, Drain-to-S ource Voltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
15
12
9
6
3
0
0
0.5
1
1.5
2
2.5
3
V
G S
=1.5V
V
G S
=4V
V
G S
=2.5V
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
3
6
9
12
15
1
V
G S
=2.5V
V
G S
=4V
3
T j=125 C
V
G S
=2V
150
a.Surface Mounted on FR4 Board, t <=10sec.
25 C
V
G S
=4V
I
D
=5A
V
G S
=2.5V
I
D
=3A
0
0.8
1.8
1.6
1.4
1.2
1.0
-55 C
S TG 8209
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
4
6
15.0
9.0
1.0
0
0.4
0.8
1.2
1.6
2.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=250uA
-50 -25
0
25 50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
V
G S
, G ate-S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
60
50
40
30
20
10
0
F igure 7. On-R esistance vs.
G ate-S ource V oltage
2
2.5
3
3.5
4
0
F igure 5. G ate T hres hold V ariation
with T emperature
25 C
125 C
I
D
=5A
6.0
25 C
75 C
75 C
12.0
125 C
3.0
S TG 8209
6
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
F igure 10. G ate C harge
Qg, T otal G ate C harge (nC )
5
4
3
2
1
0
0
2
4
6
8
10
12
14 16
V
DS
=10V
I
D
=5A
F igure 9. C apacitance
V
DS
, Drain-to S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
900
750
600
450
300
150
0
C iss
C oss
C rss
F igure 11.s witching characteris tics
R g, G ate R esistance (
W
)
S
w
i
t
c
h
i
n
g
T
i
m
e
(
n
s
)
5
F igure 12. Maximum S afe
O perating Area
V
DS
, Drain-S ource V oltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
80
10
1
0.1
0.03
0.1
1
10
30 50
V
G S
=4V
S ingle P ulse
T
A
=25 C
10m
s
100
ms
1s
DC
R
DS
(ON
) Li
mit
100
10
1
1
6 10
60 100
60
600
300
600
V DS =10V ,ID=1A
V G S =
V
T D (o ff)
T f
T D (on)
T r
4
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
5
INVE R TE D
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
6
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
Single Pulse
on
P
DM
t
1
t
2
1. R
thJ A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
th
th
th
0.01
0.02
0.5
0.2
0.1
0.05
S T G 8209
7
S T G 8209
PAC K AG E OUT LINE DIME NS IONS
T S S OP -8
TSSOP-8 Tape and Reel Data
TSSOP-8 Carrier Tape
TSSOP-8 Reel
UNIT :
PACKAGE
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
6.08
TSSOP
8
4.40
1.60
1.50
+ 0.1
- 0.0
1.50
+ 0.1
- 0.0
12.00
0.3
1.75
5.50
0.05
8.00
4.00
2.00
0.05
0.30
0.05
UNIT :
TAPE SIZE
12
REEL SIZE
330
M
N
W
W1
H
K
S
G
R
V
330
100
12.5
16.0
13.0
+ 0.5
- 0.2
10.6
2.0
0.5
S T G 8209
8
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