-20
Dual P-Channel E nhancement Mode Field E ffect Transistor
S urface Mount Package.
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
12
V
Drain Current-Continuous @ T
J
=125 C
-Pulsed
I
D
-5.2
-26
-1.7
2
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
R
JA
62.5
/W
C
S T M4952
a
a
a
a
b
(300us Pulse Width)
S amHop Microelectronics C orp.
May,24 2005 ver1.1
1
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) MAX
-20V
-5.2A
50 @ V
G S
= -4.5V
80 @ V
G S
= -2.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S O-8
1
S 1
G 1
S 2
G 2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
S T M4952
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250uA
=
-20
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-16V, V
GS
0V
=
=
-1
uA
Gate-Body Leakage
I
GSS
V
GS
12V, V
DS
0V
=
=
nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-0.6
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
-4.5V, I
D
-5A
V
GS
-2.5V, I
D
-3A
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -4.5V
A
S
Forward Transconductance
FS
g
V
DS
-15V, I
D
- 4.9A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=-10V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
D
= -10V,
R
L
=10 ohm
I
D
= -1A,
V
GEN
= -4.5V,
R
GEN
= 10 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-10V, I
D
= - 1A,
V
GS
=-4.5V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
m-ohm
m-ohm
100
50
80
-20
8
994
181
12
7.3
81.4
33.2
9.5
1.7
1.8
106
-1.5
-0.85
S T M4952
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is =-1.7A
-0.89 -1.3
V
b
Notes
a.Surface Mounted on FR4 Board, t <=10sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
F igure 3. C apacitance
-V
DS
, Drain-to S ource Voltage (V )
-V
G S
, G ate-to-S ource Voltage (V )
-V
DS
, Drain-to-S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
5
20
16
12
8
4
0
0
2
4
6
8
10
12
-V
G S
=10,9,8,7,6,5,4V
25 C
25
20
15
10
5
0
0
0.4
0.8
1.2
1.6
2.0
2.4
-55 C
T j=125 C
3
F igure 4. On-R esistance Variation with
Temperature
T j, J unction T emperature ( C )
C iss
C oss
C rss
1500
1250
1000
750
500
250
0
-V
G S
=3V
-V
G S
=2V
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100
125
-25
25
75
V
G S
=-4.5V
I
D
=-5A
0
15
10
5
30
25
20
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
(
N
o
r
m
a
l
i
z
e
d
)
S T M4952
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
-
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
-
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
-
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 7. T rans conductance V ariation
with Drain C urrent
-I
DS
, Drain-S ource C urrent (A)
F igure 9. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 10. Maximum S afe
O perating Area
-V
DS
, Drain-S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
-V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
4
5
15
12
0
3
6
9
0
5
10
15
20
V
DS
=-15V
20.0
10.0
1.0
0.4
0.6
0.7
0.9
1.1
1.3
V
G S
=0V
4
5
3
2
1
0
0
2
4
6
8
10
12 14 16
V
DS
=-4.5V
I
D
=-1A
40
10
1
0.1
0.03
0.1
1
10
20 30
V
G S
=-4.5V
S ingle P ulse
T
A
=25 C
R
DS
(O
N)
Lim
it
10m
s
100
ms
1s
DC
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
0
50
100
125
-25
25
75
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
0
50
100
125
-25
25
75
I
D
=-250uA
I
D
=-250uA
V
DS
=V
G S
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
2
1
0.1
0.01
S quare Wave P ulse Duration (sec)
F igure 13. Normalized T hermal T ransient Impedance C urve
r
(
t
)
,
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
5
5
S T M4952
INVE R TE D
Duty C ycle=0.5
0.2
0.1
0.05
0.02
S ingle P ulse
10
-4
10
-3
10
-2
10
-1
1
10
100
P
DM
t
1
t
2
1. R
thJ A
(t)=r (t) * R
thJ A
2. R
thJ A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
thJ A
(t)
4. Duty C ycle, D=t
1
/t
2
-V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
PAC K AG E OUT LINE DIME NS IONS
S O-8
6
S Y MB OLS
MIN
MIN
0.053
0.004
0.189
0.150
0.228
0.016
0
1.35
0.10
4.80
3.81
5.79
0.41
0
MAX
MAX
0.069
0.010
0.196
0.157
0.244
0.050
8
1.75
0.25
4.98
3.99
6.20
1.27
8
MILLIME T E R S
INC HE S
A
A1
D
E
H
L
1
e
B
H
E
L
A
1
A
C
D
0.05 TYP.
0.016 TYP.
0.008
TYP.
0.015X45
S T M4952
SO-8 Tape and Reel Data
SO-8 Carrier Tape
SO-8 Reel
unit:
PACKAGE
SOP 8N
150
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
6.40
5.20
2.10
1.5
(MIN)
1.5
+ 0.1
- 0.0
12.0
0.3
1.75
5.5
0.05
8.0
4.0
2.0
0.05
0.3
0.05
UNIT:
TAPE SIZE
12
REEL SIZE
330
M
N
W
W1
H
K
S
G
R
V
330
1
62
1.5
12.4
+ 0.2
16.8
- 0.4
12.75
+ 0.15
2.0
0.15
S T M4952
7
PDF 
ZIP