Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
Apr.28 2005 ver1.1
1
P R ODUC T
V
DS S
I
D
R
DS (ON) ( m
W
) Max
30V
7A
25 @ V
G S
= 10V
42 @ V
G S
= 4.5V
S O-8
1
1
2
3
4
8
7
6
5
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
(N-C hannel)
P R ODUC T S UMMAR Y
V
DS S
I
D
-30V
-4.5A
60 @ V
G S
= -10V
80 @ V
G S
= -4.5V
(P -C hannel)
S amHop Microelectronics C orp.
S T M8301
R
DS (ON) ( m
W
) Max
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
N-Channel P-Channel
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
V
Drain Current-Continuous @ Ta
-Pulsed
I
D
2
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
62.5
/W
C
a
a
a
a
b
30
1.7
-30
-4.5
-1.7
20
20
-18
R
JA
7
29
25 C
70 C
Ta= 25 C
Ta=70 C
1.44
6
-3.8
A
S T M8301
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
24V, V
GS
0V
=
=
1
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
1
2.5
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
10V, I
D
7A
V
GS
4.5V, I
D
5A
42
On-State Drain Current
I
D(ON)
V
DS
= 10V, V
GS
= 10V
A
S
Forward Transconductance
FS
g
V
DS
10V, I
D
7A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V
I
D
= 1A
V
GS
= 10V
R
GEN
= 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
= 7A,
V
GS
=10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
25
uA
m ohm
m ohm
N-Channel ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
V
DS
=15V, I
D
=7A,V
GS
=10V
nC
V
DS
=15V, I
D
=7A,V
GS
=4.5V
10
29
792
133
87
6.5
12.9
17.9
5.2
13.6
6.8
2.0
3.5
1.6
20
34
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250uA
=
-30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-24V, V
GS
0V
=
=
-1
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
nA
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-1
-2.5
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
-10V, I
D
-4.5A
60
V
GS
-4.5V, I
D
-3A
80
On-State Drain Current
I
D(ON)
V
DS
= -10V, V
GS
= -10V
A
S
Forward Transconductance
FS
g
V
DS
-10V, I
D
- 4.5A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -15V
I
D
= -1A
V
GEN
= -10V
R
GEN
= 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-15V, I
D
= - 4.5A,
V
GS
=-10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
3
ON CHAR ACTER ISTICS
b
100
m ohm
m ohm
P-Channel ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
nC
V
DS
=-15V,I
D
=-4.5A,V
GS
=-10V
V
DS
=-15V,I
D
=-4.5A,V
GS
=-4.5V
-18
9
uA
S T M8301
586
122
78
5.6
4.7
51.8
33.5
11.2
5.4
1.4
2.7
-1.5
50
70
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
4
5
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
V
GS
=4V
V
GS
=2.5V
25 C
25
20
15
10
5
0
0.0
0.8
1.6
2.4
3.2
4.0
4.8
Tj=125 C
Tj( C)
2.2
1.8
1.4
1.0
0.6
0.4
0
-50
0
50
100
150
1200
1000
800
600
400
200
0
0
5
10
15
20
25
30
Ciss
Coss
Crss
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =1.7A
N-Ch
0.79
1.2
-0.8
-1.2
V
GS
= 0V, Is =-1.7A
P-Ch
V
b
C
N-Channel
-25
25
75
125
V
G S
=10V
I
D
=7A
S T M8301
V
GS
=10V
V
GS
=3V
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
(
N
o
r
m
a
l
i
z
e
d
)
V
GS
=4.5V
V
GS
=5V
-55 C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300s, Duty Cycle 2%.
a.Surface Mounted on FR4 Board, t 10sec.
* R
JA
is 62.5 C/W when mounted on 1in FR-4 board with 2oz Copper
2
* R
JA
is 125 C/W when mounted on 0.02 in FR-4 board with 2oz Copper
2
F igur e 5. G ate T hr eshold V ar iation
with T emper atur e
F igur e 6. B r eakdown V oltage V ar iation
with T emper atur e
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
with Dr ain C ur r ent
I
DS
, Drain-S ource C urrent (A)
F igur e 8. B ody Diode F or war d V oltage
V ar iation with Sour ce C ur r ent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
5
5
20.0
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125 150
V
DS
=V
GS
I
D
=250
uA
-50 -25
0
25
50
75
100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=-250
uA
16
12
8
4
20
0
0
5
10
15
20
V
DS
=10V
N-C hannel
F igur e 7. T r ansconductance V ar iation
S T M8301
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