-20
P-Channel E nhancement Mode Field E ffect Trans is tor
AB S OLUTE MAXIMUM R ATINGS (T
A
=25 C unles s otherwis e noted)
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
V
Drain Current-Continuous @ T
J
=25 C
-Pulsed
I
D
-2.8
A
A
A
W
I
DM
-11
Drain-S ource Diode Forward Current
I
S
-1.25
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
R
thJA
100
/W
C
1.25
a
a
a
a
b
1
S amHop Microelectronics C orp.
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) Max
-20V
-2.8A
90 @ V
G S
= -4.5V
150 @ V
G S
= -2.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S OT-26 package.
12
S T S 2611
F E B 25 2005
TS OP6
Top View
D
D
G
D
D
S
1
2
3
6
5
4
3
4
1 2 5 6
G
S
D
S T S 2611
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250uA
=
-20
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-16V, V
GS
0V
=
=
1
uA
Gate-Body Leakage
I
GSS
V
GS
12V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
=-250uA
=
-0.5
-1.5
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
-4.5V, I
D
-2.5A
V
GS
-2.5V, I
D
-1.0A
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -4.5V
A
S
Forward Transconductance
FS
g
V
DS
-5V, I
D
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
= -20V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -10V,
I
D
= -1A,
V
GS
= -4.5V,
R
GEN
= 6
ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
= -10V, I
D
= -2.5A,
V
GS
= -4.5V
nC
nC
nC
C
Fall Time
=
=
=
=
=
2
m-ohm
m-ohm
-7
= -2.5A
6
90
150
380
100
60
7.5
10.9
27.3
22.5
3.6
0.9
0.8
-0.8
75
125
S T S 2611
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is =-1.25A
-0.81 -1.2
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Temperature
F igure 3. C apacitance
-V
DS
, Drain-to S ource Voltage (V )
-V
G S
, G ate-to-S ource Voltage (V )
-V
DS
, Drain-to-S ource Voltage (V )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
a.Surface Mounted on FR 4 Board, t 10sec.
5
0 5 10 15 20 25 30
C iss
C oss
1000
800
600
400
200
0
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
-V
G S
=4V
3
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100
125
T j( C )
-25
25
75
V
G S
=-4.5V
I
D
=-2.5A
C rss
25 C
15
12
9
6
3
0
0.0
0.6
1.2
1.8
2.4
3.0
T j=125 C
-55 C
-V
G S
=2V
-V
G S
=3V
3.6
-V
G S
=4.5V
-V
G S
=10V
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
(
N
o
r
m
a
l
i
z
e
d
)
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
-
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
-
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 7. T rans conductance V ariation
with Drain C urrent
-I
DS
, Drain-S ource C urrent (A)
F igure 9. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 10. Maximum S afe
O perating Area
-V
DS
, Drain-S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
-V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
20
10
0
2
0
0.6
0.8
1.0
1.2
1.4
4
3
2
1
0
0 0.5 1 1.5 2
2.5
3
3.5
4
V
DS
=-10V
I
D
=-2.5A
T
J
=25 C
50
10
1 1
0.1
0.03
0.1
1
10 20
50
R
DS
(O
N)
L
im
it
10m
s
100
ms
1s
DC
V
G S
=-4.5V
S ingle P ulse
Tc=25 C
4
-50 -25
0
25
50
75 100 125
1.10
1.07
1.04
1.00
0.97
0.94
0.91
I
D
=-250uA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125
V
DS
=V
G S
I
D
=-250uA
S T S 2611
10
8
6
4
12
0
0
3
6
9
12
15
2
V
DS
=-5V
5
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
5
INVE R TE D
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
5
S T S 2611
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
Single Pulse
on
P
DM
t
1
t
2
1. R
thJ A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
th
th
th
0.01
0.02
0.5
0.2
0.1
0.05
TSOP6 Tape and Reel Data
TSOP6 Carrier Tape
TSOP6 Reel
7
S T S 2611
6
S T S 2611
PDF 
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