30
N-Channel E nhancement Mode Field E ffect Trans is tor
S ep 15 2005
AB S OLUTE MAXIMUM R ATINGS (T
A
=25 C unles s otherwis e noted)
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
V
Drain Current-Continuous @ T
J
=25 C
-Pulsed
I
D
3
A
A
A
W
I
DM
12
Drain-S ource Diode Forward Current
I
S
1.25
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
R
thJA
100
/W
C
S T S 3404
1.25
a
a
b
G
D
S
S OT-23
S
G
D
1
S amHop Microelectronics C orp.
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) Max
30V
3A
60 @ V
G S
= 10V
100 @ V
G S
=4.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S OT-23 package.
20
S T S 3404
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
24V, V
GS
0V
=
=
1
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
1
3
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
10V, I
D
3A
65
V
GS
4.5V, I
D
2A
110
On-State Drain Current
I
D(ON)
V
DS
= 5V, V
GS
= 4.5V
A
S
Forward Transconductance
FS
g
V
DS
5V, I
D
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V,
I
D
= 1A,
V
GS
= 10V,
R
L
= 15
ohm
R
GEN
= 6
ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
= 3A,
V
GS
=10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
2
m-ohm
m-ohm
10
=3A
6
310
73
38
7.2
4.5
12
2.5
6.2
0.9
1.8
1.5
45
70
S T S 3404
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is =1.25A
0.82
1.2
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Temperature
V
G S
, G ate-to-S ource Voltage (V )
V
DS
, Drain-to-S ource Voltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
a.Surface Mounted on FR 4 Board, t 10sec.
5
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
V
G S
=10V
V
G S
=3V
3
1.5
1.4
1.3
1.2
1.1
1.0
0
0
50
100
150
T j( C )
25
75
125
V
G S
=10V
I
D
=3A
10
8
6
4
2
0
0.0
0.8
1.6
2.4
3.2
4.0
4.8
T j=125 C
-55 C
25 C
V
G S
=4V
V
G S
=4.5V
I
D
, Drain C urrent (A)
R
D
S
(
o
n
)
(
m
W
)
120
100
80
60
40
20
0
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
2
4
6
8
10
0
V
G S
=10V
V
G S
=4.5V
V
G S
=4.5V
I
D
=2A
O
n
-
R
e
s
i
s
t
a
n
c
e
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
20
10
1
0.4
0.6
0.8
1.0
1.2
1.4
-50 -25
0
25
50
75 100 125
1.3
1.2
1.1
1.0
0.9
0.8
0.7
I
D
=250uA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125
V
DS
=V
G S
I
D
=250uA
S T S 3404
V
G S
, G ate-S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
120
100
80
60
40
20
0
F igure 7. On-R esistance vs.
G ate-S ource V oltage
2
4
6
8
10
0
25 C
125 C
75 C
I
D
=3A
F igure 5. G ate T hres hold V ariation
with T emperature
25 C
75 C
125 C
4
F igure 9. C apacitance
V
DS
, Drain-to S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
0 5 10 15 20 25 30
C iss
C oss
500
400
300
200
100
0
C rss
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
F igure 10. G ate C harge
Qg, T otal G ate C harge (nC )
8
10
6
4
2
0
0
1
2 3
4
5
6
7
8
V
DS
=15V
I
D
=3A
F igure 12. Maximum S afe
O perating Area
V
DS
, Drain-S ource V oltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
50
10
1 1
0.1
0.03
0.1
1
10 20
50
R
DS
(O
N)
Li
mi
t
V
G S
=10V
S ingle P ulse
Tc=25 C
S T S 3404
F igure 11.s witching characteris tics
R g, G ate R esistance (
W
)
S
w
i
t
c
h
i
n
g
T
i
m
e
(
n
s
)
10
1
1
6 10
60 100
600
300
V DS =15V ,I D=1A
V G S =10V
T D(o ff)
T f
T D (o n)
100
T r
10m
s
100
ms
1s
DC
5
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
5
INVE R TE D
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
6
S T S 3404
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
Single Pulse
on
P
DM
t
1
t
2
1. R
thJ A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
th
th
th
0.01
0.02
0.5
0.2
0.1
0.05
J
2.70
2.40
1.40
0.35
0
0.45
1.90 REF.
1.00
0.10
3.10
2.80
1.60
0.50
0.10
0.55
1.30
0.20
0.106
0.094
0.055
0.014
0
0.018
0.039
0.004
0.122
0.110
0.063
0.020
0.004
0.022
0.051
0.008
0.40
0.45
1.15
0.016
0.033
0.045
S T S 3404
7
G
A
F
C
B
L
D (TYP.)
E
H
M
I
F
G
I
J
L
M
0.075 REF.
-
-
0
10
0
10
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
SOT-23 Reel
S T S 3404
8
3.20
0.10
3.00
0.10
1.33
0.10
1.00
+0.25
1.50
+0.10
8.00
+0.30
-0.10
1.75
0.10
3.50
0.05
4.00
0.10
4.00
0.10
2.00
0.05
0.20
0.02
178
178
1
60
1
9.00
0.5
12.00
0.5
13.5
0.5
2.00
0.5
10.0
18.00
5.00
8
V
UNIT:
R
G
S
K
H
W1
W
N
M
10.5
REEL SIZE
TAPE SIZE
UNIT:
PACKAGE
SOT-23
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
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