-55
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
20
V
Drain Current-Continuous @ Tc=25 C
-Pulsed
I
D
-24
-72
-20
50
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
a
1
Dec 30, 2005
S amHop Microelectronics C orp.
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) Max
-24
42 @ V
G S
= -10V
55 @ V
G S
= -4.5V
F E AT UR E S
-55V
S T U/D2455P LS
TO-252 and TO-251 Package.
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S TU S E R IE S
TO-252AA(D-PAK)
S TD S E R IE S
TO-251(l-PAK)
G
G
S
S
D
D
S
G
D
Thermal R esistance, Junction-to-Case
Thermal R esistance, Junction-to-Ambient
R
JC
3
50
R
JA
/W
C
/W
C
P-Channel E nhancement Mode Field E ffect Transistor
@ Tc=25 C
Drain-S ource Voltage R ating
Vspike
c
-60
V
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250uA
=
-55
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-44V, V
GS
0V
=
=
-1
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
-1
-3
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
-10V, I
D
-10A
V
GS
-4.5V, I
D
- 6A
On-State Drain Current
I
D(ON)
V
DS
= -10V, V
GS
= -10V
A
S
Forward Transconductance
FS
g
V
DS
-10V, I
D
-10A
DYNAMIC CHAR ACTER ISTICS
b
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=-30V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -30V
I
D
= -1 A
V
GS
= -10V
R
GEN
= 6 ohm
ns
ns
ns
ns
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-30V, I
D
= -10A
V
GS
=-10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
uA
m ohm
m ohm
nC
-24
125
185
1730
31
35
127
25
21
7
3.5
13.5
16
ohm
R g
Gate resistance
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
1.7
S TU/D2455P LS
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Total Gate Charge (4.5V)
-1.7
33
42
55
42
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is = -10A
-1.3
V
a
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
-I
D
, Drain C urrent (A)
-V
G S
, G ate-to-S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
O
n
-
R
e
s
i
s
t
a
n
c
e
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
3
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
S TU/D2455P LS
60
50
40
30
20
10
0
-55 C
25 C
20
15
10
5
0
0
0.7
1.4
2.1
2.8
3.5
4.2
T j=125 C
2.0
1.8
1.6
1.4
1.2
1.0
0.0
0
25
125
-0.92
T j( C )
100
50
75
V
G S
=-4.5V
I
D
=-6A
T j, J unction T emperature ( C )
F igure 1. Output C haracteristics
-V
DS
, Drain-to-S ource Voltage (V )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
V
G S
=-4.5V
V
G S
=-3V
V
G S
=-3.5V
V
G S
=-4V
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
5
10
15
20
25
0
V
G S
=-10V
V
G S
=-4.5V
V
G S
=-10V
I
D
=-10A
V
G S
=-8V
V
G S
=-10V
150
c.Guaranteed when external R g=6 ohm and tf < tf max
S TU/D2455P LS
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
-
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
-V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
4
6
20.0
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=-250uA
-50 -25
0
25 50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=-250uA
-V
G S
, G ate- S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
120
100
80
60
40
20
0
F igure 7. On-R esistance vs.
G ate-S ource V oltage
2
4
6
8
10
0
F igure 5. G ate T hres hold V ariation
with T emperature
25 C
125 C
75 C
25 C
75 C
125 C
I
D
=-10A
S TU/D2455P LS
6
-
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
F igure 10. G ate C harge
Qg, T otal G ate C harge (nC )
10
8
6
4
2
0
0
4
8
12 16 20
24
28 32
V
DS
=-15V
I
D
=-10A
F igure 9. C apacitance
-V
DS
, Drain-to S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
0 5 10 15 20 25 30
3000
2500
2000
1500
1000
500
0
C iss
C oss
C rss
F igure 11.s witching characteris tics
R g, G ate R esistance (
W
)
S
w
i
t
c
h
i
n
g
T
i
m
e
(
n
s
)
100
10
1
1
6 10
60 100
60
600
300
220
T D(on)
T D(off)
T r
T f
V DS =-15V ,ID=-1A
V G S =-10V
5
F igure 10. Maximum S afe
O perating Area
-V
DS
, Drain-S ource V oltage (V )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
80
50
10
1
0.03
0.1
1
10 60
R
DS
(O
N)
L
im
it
V
G S
=-10V
S ingle P ulse
Tc=25 C
10m
s
100
ms
1s
DC
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