Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
Nov,24 2005
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
N-Channel P-Channel
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
V
Drain Current-Continuous @ Tc
-Pulsed
I
D
11
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 175
C
a
40
8
-40
-12
-6
1
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) Max
40V
16A
30 @ V
G S
= 10V
40 @ V
G S
= 4.5V
(N-C hannel)
P R ODUC T S UMMAR Y
V
DS S
I
D
-40V
-12A
48 @ V
G S
= -10V
65 @ V
G S
= -4.5V
(P -C hannel)
S amHop Microelectronics C orp.
20
20
-50
S T U405D
R
DS (ON) ( m
W
) Max
16
50
25 C
70 C
Tc= 25 C
Tc= 70 C
7.7
13.8
-10
A
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Case
Thermal R esistance, Junction-to-Ambient
R
JC
13.6
120
R
JA
/W
C
/W
C
S 1
G1
D1
N-ch
S 2
G2
D2
P-ch
TO-252-5L
D1/D2
S 1
G1
S 2 G2
D1/D2
S T U405D
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
40
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
32V, V
GS
0V
=
=
1
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
10V, I
D
8A
V
GS
4.5V, I
D
6A
40
On-State Drain Current
I
D(ON)
V
DS
= 5V, V
GS
= 4.5V
A
S
Forward Transconductance
FS
g
V
DS
10V, I
D
8A
DYNAMIC CHAR ACTER ISTICS
b
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 20V
I
D
= 1 A
V
GS
= 10V
R
GEN
= 3.3 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=28V, I
D
= 8 A
V
GS
=10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
30
uA
m ohm
m ohm
N-Channel ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
V
DS
=28V, I
D
=8A,V
GS
=10V
nC
V
DS
=28V, I
D
=8A,V
GS
=4.5V
20
65
105
885
17
7
28
12
16
4.8
2.2
8.6
20
ohm
R g
Gate resistance
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
1050
0.32
1
1.8
3
22
30
S T U405D
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
-250uA
=
-40
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
-32V, V
GS
0V
=
=
-1
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
100 nA
ON CHAR ACTER ISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= -250uA
=
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
-10V, I
D
-6A
V
GS
-4.5V, I
D
-4A
65
On-State Drain Current
I
D(ON)
V
DS
= -5V, V
GS
= -10V
A
S
Forward Transconductance
FS
g
V
DS
-10V, I
D
-6A
DYNAMIC CHAR ACTER ISTICS
b
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=-25V, V
GS
= 0V
f =1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= -20V
I
D
= -1A
V
GS
= -10V
R
GEN
= 3.3 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=-28V, I
D
= -6 A
V
GS
=-10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
3
5
48
uA
m ohm
m ohm
P-Channel ELECTRICAL CHARACTERISTICS (T
A
25 C unless otherwise noted)
V
DS
=-28V, I
D
=-6A,V
GS
=-10V
nC
V
DS
=-28V, I
D
=-6A,V
GS
=-4.5V
-20
90
135
980
20.7
35
82
17
12
6.2
1.5
11
12
ohm
R g
Gate resistance
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
1150
2.2
-1
-1.6
-3
40
50
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
I
D
, Drain C urrent (A)
V
G S
, G ate-to-S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
4
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
60
50
40
30
20
10
0
-55 C
25 C
20
12
8
4
0
0
0.8
1.6
2.4
3.2
4.0
4.8
T j=125 C
1.5
1.4
1.3
1.2
1.1
1.0
0.0
0
25
50
75
T j( C )
100
125
V
G S
=10V
I
D
=8A
T j, J unction T emperature ( C )
F igure 1. Output C haracteristics
V
DS
, Drain-to-S ource Voltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
V
G S
=3V
V
G S
=4V
V
G S
=10V
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
5
10
15
20
25
1
V
G S
=10V
V
G S
=4.5V
V
G S
=4.5V
I
D
=6A
V
G S
=8V
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =8A
N-Ch
0.98
1.2
-0.9
-1.2
V
GS
= 0V, Is =-6A
P-Ch
V
b
C
Notes
b.Guaranteed by design, not subject to production testing.
a.Pulse Test:Pulse Width 300s, Duty Cycle 2%.
N-Channel
V
G S
=4.5V
16
150
S T U405D
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
5
6
20.0
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=250uA
-50 -25
0
25 50
75 100 125 150
1.40
1.30
1.20
1.10
1.00
0.90
0.80
I
D
=250uA
V
G S
, G ate- S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
120
100
80
60
40
20
0
F igure 7. On-R esistance vs.
G ate-S ource V oltage
2
4
6
8
10
0
F igure 5. G ate T hres hold V ariation
with T emperature
25 C
125 C
75 C
25 C
75 C
125 C
I
D
=8A
S T U405D
6
F igure 12. Maximum S afe
O perating Area
V
DS
, Drain-S ource V oltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
100
10
0.5
0.1
1
1
10
30
60
V
G S
=10V
S ingle P ulse
Tc=25 C
R
DS
(O
N)
Li
mi
t
DC
1s
100
ms
10m
s
1m
s
80
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
F igure 10. G ate C harge
Qg, T otal G ate C harge (nC )
10
8
6
4
2
0
0
3
6
9
12 15
18
21 24
V
DS
=28V
I
D
=8A
F igure 9. C apacitance
V
DS
, Drain-to S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
0 5 10 15 20 25 30
1200
1000
800
600
400
200
0
C iss
C oss
C rss
F igure 11.s witching characteris tics
R g, G ate R esistance (
W
)
S
w
i
t
c
h
i
n
g
T
i
m
e
(
n
s
)
100
10
1
1
6 10
60 100
60
600
300
200
T D(on)
T D(off)
T r
T f
V DS =20V ,ID=1A
V G S =10V
6
S T U405D
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
S quare Wave P ulse Duration (sec)
F igure 13. Normalized T hermal T ransient Impedance C urve
r
(
t
)
,
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
D=0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
1. R
J A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
S ING LE P ULS E
S T U405D
7
P-C hannel
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
-I
D
, Drain C urrent (A)
-V
G S
, G ate-to-S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
O
n
-
R
e
s
i
s
t
a
n
c
e
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
120
100
80
60
40
20
0
-55 C
25 C
20
12
8
4
0
0
0.8
1.6
2.4
3.2
4.0
4.8
T j=125 C
1.5
1.4
1.3
1.2
1.1
1.0
0.0
0
25
50
75
T j( C )
150
100
125
V
G S
=-4.5V
I
D
=-4A
T j, J unction T emperature ( C )
F igure 1. Output C haracteristics
-V
DS
, Drain-to-S ource Voltage (V )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
V
G S
=-3V
V
G S
=-4V
V
G S
=-4.5V
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
5
10
15
20
25
1
V
G S
=-10V
V
G S
=-4.5V
V
G S
=-10V
I
D
=-6A
V
G S
=-8V
V
G S
=-10V
16
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
-
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
-V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
8
6
20.0
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=-250uA
-50 -25
0
25 50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=-250uA
-V
G S
, G ate- S ource Voltage (V )
R
D
S
(
o
n
)
(
m
W
)
120
100
80
60
40
20
0
F igure 7. On-R esistance vs.
G ate-S ource V oltage
2
4
6
8
10
0
F igure 5. G ate T hres hold V ariation
with T emperature
25 C
125 C
75 C
25 C
75 C
125 C
I
D
=-6A
S T U405D
6
-
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
F igure 10. G ate C harge
Qg, T otal G ate C harge (nC )
10
8
6
4
2
0
0
3
6
9
12 15
18
21 24
V
DS
=-28V
I
D
=-6A
F igure 9. C apacitance
-V
DS
, Drain-to S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
0 5 10 15 20 25 30
1200
1000
800
600
400
200
0
C iss
C oss
C rss
F igure 11.s witching characteris tics
R g, G ate R esistance (
W
)
S
w
i
t
c
h
i
n
g
T
i
m
e
(
n
s
)
100
10
1
1
6 10
60 100
60
600
300
400
T D(on)
T D(off)
T r
T f
V DS =-20V ,ID=-1A
V G S =-10V
9
F igure 12. Maximum S afe
O perating Area
-V
DS
, Drain-S ource V oltage (V )
-
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
70
50
10
1
0.03
0.1
1
10 30
60
R
DS
(O
N)
L
im
it
V
G S
=-10V
S ingle P ulse
Tc=25 C
10m
s
100
ms
1s
DC
S T U405D
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
S quare Wave P ulse Duration (sec)
F igure 13. Normalized T hermal T ransient Impedance C urve
r
(
t
)
,
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
D=0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
1. R
J A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
S ING LE P ULS E
10
S T U405D
Millimeters
MIN
MAX
A
6.40
6.80
B
5.20
5.50
C
6.80
7.20
D
2.20
2.80
P
S
0.50
0.80
REF .
1.27 REF.
TO-252-5L
P A C K A G E OUT L INE DIME NS IONS
Millimeters
MIN
MAX
G
0.40
0.60
H
2.2
2.40
J
0.45
0.55
K
0
0.15
L
M
5.40
5.80
REF .
0.90
1.50
TO-252-5L
TO-252-5L Carrier Tape
TO-252-5L Reel
Tape and Reel Data
UNIT:
11
S T U405D
4
6
PDF 
ZIP