25
N-Channel E nhancement Mode Field E ffect Transistor
TO251 and TO 252 Package.
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
Limit
Unit
Drain-S ource Voltage
V
DS
V
Gate-S ource Voltage
V
GS
20
V
Drain Current-Continuous @ T
C
=25 C
-Pulsed
I
D
45
75
20
50
A
A
A
W
I
DM
Drain-S ource Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and S torage
Temperature R ange
T
J
, T
S TG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
R
JA
50
/W
C
S T U/D4525NL
a
a
a
a
b
S amHop Microelectronics C orp.
1
P R ODUC T S UMMAR Y
V
DS S
I
D
R
DS (ON) ( m
W
) T yp
25V
45A
7.5 @ V
G S
= 10V
15 @ V
G S
= 4.5V
F E AT UR E S
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S TU S E R IE S
TO-252AA(D-PAK)
S TD S E R IE S
TO-251(l-PAK)
G
G
S
S
D
D
Thermal R esistance, Junction-to-Case
R
JC
3
/W
C
Arp,20 2005 ver1.2
S
G
D
Drain-S ource Voltage R ating
Vspike
30
V
d
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
=
V
GS
0V, I
D
250uA
=
25
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
20V, V
GS
0V
=
=
1
uA
Gate-Body Leakage
I
GSS
V
GS
20V, V
DS
0V
=
=
nA
ON CHAR ACTER ISTICS
b
Gate Threshold Voltage
V
GS(th)
V
DS
V
GS
, I
D
= 250uA
=
1
3
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
10V, I
D
9A
9.5
V
GS
4.5V, I
D
5A
21
On-State Drain Current
I
D(ON)
V
DS
= 10V, V
GS
= 10V
60
13.5
A
S
Forward Transconductance
FS
g
V
DS
10V, I
D
9A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
1485
P
F
440
P
F
P
F
290
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
V
DD
= 15V
I
D
= 1A
V
GS
= 10V
R
GEN
= 6
17.8
ns
ns
ns
ns
52.5
28.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DS
=15V, I
D
=9A
V
GS
=10V
29.6
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
2
5
34.6
5.2
8
m ohm
m ohm
ohm
nC
V
DS
=15V, I
D
=9A,V
GS
=10V
V
DS
=15V, I
D
=9A,V
GS
=4.5V
15.8
100
S T U/D4525NL
1.8
7.5
15
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
V
S D
V
GS
= 0V, Is = 20A
1.3
V
a
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
F igure 3. C apacitance
V
DS
, Drain-to S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
O
n
-
R
e
s
i
s
t
a
n
c
e
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
3
R
D
S
(
O
N
)
,
N
o
r
m
a
l
i
z
e
d
0 5 10 15 20 25 30
2400
2000
1600
1200
800
400
0
25 C
20
15
10
5
0
0
0.9
2.7
3.6
4.5
5.4
T j=125 C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-55
-25
0
25
125
C iss
C oss
C rss
0.9
T j( C )
100
50
75
V
G S
=10V
I
D
=9A
T j, J unction T emperature ( C )
F igure 1. Output C haracteristics
V
DS
, Drain-to-S ource Voltage (V )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
V
G S
=8V
V
G S
=3V
V
G S
=4V
V
G S
=4.5V
1.8
S T U/D4525NL
V
G S
=10V
-55 C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
d.Guaranteed when external R g=6 ohm and tf < tf max
a.Surface Mounted on FR 4 Board, t 10sec.
F igure 5. G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
F igure 7. T rans conductance V ariation
with Drain C urrent
I
DS
, Drain-S ource C urrent (A)
F igure 9. G ate C harge
Qg, T otal G ate C harge (nC )
F igure 10. Maximum S afe
O perating Area
V
DS
, Drain-S ource V oltage (V )
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V
S D
, B ody Diode F orward V oltage (V )
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
4
6
20.0
10.0
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=250uA
-50 -25
0
25 50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
ID=250uA
16
12
8
4
20
24
0
0
5
10
15
20
V
DS
=10V
10
8
6
4
2
0
0
4
8
12 16 20
24
28 32
V
DS
=15V
I
D
=9A
400
100
10 1
1
0.1
0.1
1
10 25
60
10m
s
100
ms
1s
DC
V
G S
=10V
S ingle P ulse
T
A
=25 C
R
DS
(O
N)
Li
mi
t
S T U/D4525NL
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
5
6
INVE R TE D
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
N
o
r
m
a
l
i
z
e
d
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
R
e
s
i
s
t
a
n
c
e
Single Pulse
on
P
DM
t
1
t
2
1. R
thJ A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
th
th
th
0.01
0.02
0.5
0.2
0.1
0.05
S T U/D4525NL
6
S TU/D4525NL
5
35
9
3
95
05
7
41
7
85
30
3
84
0.94
3
3
4
5
9
3
9
1
6.00
0
36
4
9.70
1
82
398
1.425
1.625
56
0.064
0.650
0.850
6
33
L2
0.600
0.024
REF.
REF.
2.29
BSC
0.090
BSC
7
S T U/D4525NL
TO251 Tube/TO-252
TO-252 Carrier Tape
TO-252 Reel
Tape and Reel Data
UNIT:
PACKAGE
TO-252
(16 )
A0
B0
K0
D0
D1
E
E1
E2
P0
P1
P2
T
6.80
0.1
10.3
0.1
2.50
0.1
2
1.5
+ 0.1
- 0
16.0
0.3
1.75
0.1
7.5
0.15
8.0
0.1
4.0
0.1
2.0
0.15
0.3
0.05
UNIT:
TAPE SIZE
16
REEL SIZE
330
M
N
W
T
H
K
S
G
R
V
330
0.5
97
1.0
17.0
+ 1.5
- 0
2.2
13.0
+ 0.5
- 0.2
10.6
2.0
0.5
S
7
S T U/D4525NL
" A"
TO-251 Tube
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