30
N-Channel Enhancement Mode Field Effect Transistor
TO-252 and TO-251 Package.
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
20
V
Drain Current-Continuous @T
A
= 25 C
-Pulsed
I
D
25
20
50
A
A
A
W
I
DM
Drain-Source Diode Forward Current
I
S
Maximum Power Dissipation
P
D
Operating Junction and Storage
Temperature Range
T
J
, T
STG
-55 to 175
C
a
a
a
b
SamHop Microelectronics Corp.
Preliminary Mar.25 2004
1
PRODUCT SUMMARY
V
DSS
I
D
R
DS(ON) ( m
) Max
30V
25A
30@ V
GS
= 10V
40@ V
GS
= 4.5V
FEATURES
Super high dense cell design for low R
DS(ON
).
Rugged and reliable.
S
G
D
SDU SERIES
TO-252AA(D-PAK)
SDD SERIES
TO-251(l-PAK)
G
G
S
S
D
D
STU/D9916L
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
3
50
R
JA
/W
C
/W
C
63
S TU/D9916L
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250uA
30
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24V, V
GS
= 0V
1
uA
Gate-Body Leakage
I
GSS
V
GS
= 20V, V
DS
= 0V
nA
ON CHAR ACTER ISTICS
a
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250uA
0.7
1.0
25
35
1.5
V
Drain-Source On-State R esistance
R
DS(ON)
V
GS
= 10V, I
D
=20A
V
GS
= 4.5V, I
D
= 20A
30
40
On-State Drain Current
I
D(ON)
V
DS
= 10V, V
GS
= 10V
A
S
Forward Transconductance
FS
g
V
DS
= 10V, I
D
= 20A
DYNAMIC CHAR ACTER ISTICS
b
Input Capacitance
C
ISS
C
R SS
C
OSS
Output Capacitance
R everse Transfer Capacitance
V
Ds
=25V, V
GS
= 0V
f = 1.0MH
Z
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
t
D(ON)
t
r
t
D(OFF)
t
f
Fall time
V
DD
= 15V,
I
D
=1A,
V
GS
= 10V,
R L = 15 ohm
R GS = 11 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
Q
gs
Q
gd
V
DD
= 15V, I
D
= 20A,
R L=0.75 ohm
nC
nC
nC
2
100
m ohm
m ohm
nC
V
DD
= 15V,I
D
= 20A,V
GS
=10V
V
DS
= 15V,I
D
= 20A,V
GS
=4.5V
10
20
130
821
127
813
98
104
28.9
12
11.4
29
22.1
22
18.7
31
18.7
20
9.3
10
4
3.2
3.9
4
STU/D9916L
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =15A
1
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
O
n
-
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
a.Surface Mounted on FR4 Board, t 10sec.
R
D
S
(
O
N
)
,
5
20
16
12
8
4
0
0
2
4
6
8
10
12
V
GS
=10~4V
V
GS
=2V
25 C
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
Tj=125 C
3
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100 125
-25
25
75
V
GS
=10V
I
D
=20A
-55 C
1.3
V
GS
=3V
0 5 10 15 20 25 30
1200
1000
800
600
400
200
0
Ciss
Coss
Crss
TJ, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
t
h
,
N
o
r
m
a
l
i
z
e
d
G
a
t
e
-
S
o
u
r
c
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
g
F
S
,
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
V
G
S
,
G
a
t
e
t
o
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
B
V
D
S
S
,
N
o
r
m
a
l
i
z
e
d
D
r
a
i
n
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
I
s
,
S
o
u
r
c
e
-
d
r
a
i
n
c
u
r
r
e
n
t
(
A
)
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
15
12
9
6
18
0
0
5
10
15
20
25
3
V
DS
=10V
20
10
0
1
0.4
0.6
0.8
1.0
1.2
1.4
8
10
6
4
2
0
0
2 4 6
8
10 12 14 16
V
DS
=15V
I
D
=20A
T
J
=25 C
50
101
1
0.03
0.1
1
10
50
10m
s
100
ms
1s
DC
V
GS
=10V
Single Pulse
Tc=25 C
4
-50 -25
0
25 50
75 100 125
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250uA
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125
V
DS
=V
GS
I
D
=250uA
STU/D9916L
30
R
DS
(O
N)
Li
mi
t
70
F igure 11. S witching T est C ircuit
F igure 12. S witching Waveforms
t
V
V
t
t
d(on)
OUT
IN
on
r
10%
t
d(off)
90%
10%
10%
50%
50%
90%
t
off
t
f
90%
PULS E WIDTH
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l
I
m
p
e
d
a
n
c
e
S quare Wave P ulse Duration (sec)
F igure 13. Normalized T hermal T ransient Impedance C urve
r
(
t
)
,
N
o
r
m
a
l
i
z
e
d
E
f
f
e
c
t
i
v
e
5
6
S TU/D9916L
INVE R TE D
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
D=0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
1. R
J A
(t)=r (t) * R
J A
2. R
J A
=S ee Datasheet
3. T
J M-
T
A
= P
DM
* R
J A
(t)
4. Duty C ycle, D=t
1
/t
2
S ING LE P ULS E
V
DD
R
D
V
V
R
S
V
G
G S
IN
G E N
OUT
L
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