2003 Fairchild Semiconductor Corporation
April 2003
I
S
L9R860P
F
2
ISL9R860PF2 Rev. A
ISL9R860PF2
8A, 600V StealthTM Diode
General Description
The ISL9R860PF2 is a StealthTM diode optimized for
low loss performance in high frequency hard switched
applications. The StealthTM family exhibits low reverse
recovery current (I
RRM
) and exceptionally soft recovery
under typical operating conditions.
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low I
RRM
and short t
a
phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
StealthTM diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
Features
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 1.2
Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . t
rr
< 25ns
Operating Temperature. . . . . . . . . . . . . . . . . . 150
o
C
Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V
Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV
Avalanche Energy Rated
Applications
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
SMPS FWD
Snubber Diode
Device Maximum Ratings
T
C
= 25C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
RRM
Peak Repetitive Reverse Voltage
600
V
V
RWM
Working Peak Reverse Voltage
600
V
V
R
DC Blocking Voltage
600
V
I
F(AV)
Average Rectified Forward Current (T
C
= 75
o
C)
8
A
I
FRM
Repetitive Peak Surge Current (20kHz Square Wave)
16
A
I
FSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
100
A
P
D
Power Dissipation
26
W
E
AVL
Avalanche Energy (1A, 40mH)
20
mJ
T
J
, T
STG
Operating and Storage Temperature Range
-55 to 150
C
T
L
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
300
C
CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
K
A
CATHODE
ANODE
TO-220F
Package
Symbol
2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. A
I
S
L9R860P
F
2
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Device Marking
Device
Package
Tape Width
Quantity
R860PF2
ISL9R860PF2
TO-220F
N/A
50 Units
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
I
R
Instantaneous Reverse Current
V
R
= 600V
T
C
= 25C
-
-
100
A
T
C
= 125C
-
-
1.0
mA
V
F
Instantaneous Forward Voltage
I
F
= 8A
T
C
= 25C
-
2.0
2.4
V
T
C
= 125C
-
1.6
2.0
V
C
J
Junction Capacitance
V
R
= 10V, I
F
= 0A
-
30
-
pF
t
rr
Reverse Recovery Time
I
F
= 1A, dI
F
/dt = 100A/
s, V
R
= 30V
-
18
25
ns
I
F
= 8A, dI
F
/dt = 100A/
s, V
R
= 30V
-
21
30
ns
t
rr
Reverse Recovery Time
I
F
= 8A,
dI
F
/dt = 200A/
s,
V
R
= 390V, T
C
= 25C
-
28
-
ns
I
RRM
Maximum Reverse Recovery Current
-
3.2
-
A
Q
RR
Reverse Recovery Charge
-
50
-
nC
t
rr
Reverse Recovery Time
I
F
= 8A,
dI
F
/dt = 200A/
s,
V
R
= 390V,
T
C
= 125C
-
77
-
ns
S
Softness Factor (t
b
/t
a
)
-
3.7
-
I
RRM
Maximum Reverse Recovery Current
-
3.4
-
A
Q
RR
Reverse Recovery Charge
-
150
-
nC
t
rr
Reverse Recovery Time
I
F
= 8A,
dI
F
/dt = 600A/
s,
V
R
= 390V,
T
C
= 125C
-
53
-
ns
S
Softness Factor (t
b
/t
a
)
-
2.5
-
I
RRM
Maximum Reverse Recovery Current
-
6.5
-
A
Q
RR
Reverse Recovery Charge
195
-
nC
dI
M
/dt
Maximum di/dt during t
b
-
500
-
A/s
R
JC
Thermal Resistance Junction to Case
-
-
4.8
C/W
R
JA
Thermal Resistance Junction to Ambient TO-220F
-
-
70
C/W
2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. A
I
S
L9R860P
F
2
Typical Performance Curves
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Current vs Reverse Voltage
Figure 3. t
a
and t
b
Curves vs Forward Current
Figure 4. t
a
and t
b
Curves vs dI
F
/dt
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
V
F
, FORWARD VOLTAGE (V)
I
F
, F
O
R
W
ARD CURRE
NT
(
A
)
0
0.5 0.75
1
2.5
0.25
1.5
2
2.25
0
2
4
6
8
10
12
14
16
2.75
25
o
C
175
o
C
150
o
C
100
o
C
125
o
C
1.75
1.25
V
R
, REVERSE VOLTAGE (V)
I
R
, REV
E
RSE
CURRENT
(
A
)
100
10
1
100
200
300
500
600
400
0.1
25
o
C
175
o
C
150
o
C
125
o
C
100
o
C
I
F
, FORWARD CURRENT (A)
0
0
10
20
30
40
50
60
10
16
t
,
RE
CO
VE
R
Y
TI
M
ES (
n
s
)
70
80
2
4
6
8
12
14
V
R
= 390V, T
J
= 125C
t
b
AT dI
F
/dt = 200A/s, 500A/s, 800A/s
t
a
AT dI
F
/dt = 200A/s, 500A/s, 800A/s
dI
F
/dt, CURRENT RATE OF CHANGE (A/s)
100
0
10
20
30
40
50
60
700
1000
t
,
RE
CO
VE
R
Y
TI
M
ES (
n
s
)
200
300
400
500
600
800
900
70
80
90
V
R
= 390V, T
J
= 125C
t
b
AT I
F
= 16A, 8A, 4A
t
a
AT I
F
= 16A, 8A, 4A
I
F
, FORWARD CURRENT (A)
0
2
3
4
5
6
7
8
16
I
RR
M
, M
A
X
REVE
RSE
RE
CO
V
E
R
Y
CURREN
T
(
A
)
dI
F
/dt = 800A/s
dI
F
/dt = 500A/s
dI
F
/dt = 200A/s
V
R
= 390V, T
J
= 125C
9
10
11
2
4
6
8
10
12
14
dI
F
/dt, CURRENT RATE OF CHANGE (A/s)
100
0
2
4
6
8
10
700
1000
I
RR
M
,
M
A
X
REVE
RSE RE
CO
V
E
R
Y
CURRENT
(
A
)
V
R
= 390V, T
J
= 125C
I
F
= 16A
I
F
= 8A
I
F
= 4A
12
14
200
300
400
500
600
800
900
2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. A
I
S
L9R860P
F
2
Figure 7. Reverse Recovery Softness Factor vs dI
F
/dt
Figure 8. Reverse Recovery Charge vs dI
F
/dt
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
Typical Performance Curves
(Continued)
dI
F
/dt, CURRENT RATE OF CHANGE (A/s)
100
1
2
3
4
5
6
700
1000
V
R
= 390V, T
J
= 125C
I
F
= 16A
I
F
= 8A
I
F
= 4A
S,
RE
VER
SE
RE
CO
VE
R
Y
S
O
FT
NESS
F
A
CT
O
R
200
300
400
500
600
800
900
dI
F
/dt, CURRENT RATE OF CHANGE (A/s)
50
100
150
200
250
300
350
V
R
= 390V, T
J
= 125C
I
F
= 16A
I
F
= 8A
I
F
= 4A
Q
RR
, REV
E
RSE
RECO
V
E
R
Y
CHAR
G
E
(
n
C)
100
700
1000
200
300
400
500
600
800
900
V
R
, REVERSE VOLTAGE (V)
C
J
, JUNCT
ION CAP
A
CIT
A
NCE
(
p
F
)
0
200
400
600
800
1000
1200
0.1
100
10
1
4
0
100
50
150
6
8
10
T
C
, CASE TEMPERATURE (
o
C)
I
F(
A
V
)
, A
V
ERA
G
E F
O
R
W
ARD CURRE
NT
(
A
)
125
75
2
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-2
10
-1
Z
JA
, NORM
AL
IZ
ED
T
H
ERM
A
L
I
M
PED
A
NCE
0.01
10
-4
10
-3
SINGLE PULSE
10
0
0.1
10
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
JA
x R
JA
+ T
A
P
DM
t
1
t
2
1.0
0.001
2.0
2003 Fairchild Semiconductor Corporation
ISL9R860PF2 Rev. A
I
S
L9R860P
F
2
Test Circuits and Waveforms
Figure 12. t
rr
Test Circuit
Figure 13. t
rr
Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage
Waveforms
R
G
L
V
DD
MOSFET
CURRENT
SENSE
DUT
V
GE
t
1
t
2
V
GE
AMPLITUDE AND
t
1
AND t
2
CONTROL I
F
R
G
CONTROL dI
F
/dt
+
-
dt
dI
F
I
F
t
rr
t
a
t
b
0
I
RM
0.25 I
RM
DUT
CURRENT
SENSE
+
L
R
V
DD
R < 0.1
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
-
Q1
I = 1A
L = 40mH
V
DD
= 50V
I V
t
0
t
1
t
2
I
L
V
AVL
t
I
L
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
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