MCP MEMORY
K5T6432YT(B)M
Revision 1.0
November 2001
- 1 -
Document Title
Multi-Chip Package MEMORY
64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision History
Revision No.
1.0
Remark
Final
History
Final Specification
Draft Date
November 27, 2001
MCP MEMORY
K5T6432YT(B)M
Revision 1.0
November 2001
- 2 -
Multi-Chip Package MEMORY
64M Bit (4Mx16) Four Bank NOR Flash Memory / 32M Bit (2Mx16) UtRAM
The K5T6432YT(B)M featuring single 3.0V power supply is a
Multi Chip Package Memory which combines 64Mbit Four Bank
Flash and 32Mbit UtRAM.
The 64Mbit Flash memory is organized as 4M x16 bit and 32Mbit
UtRAM is organized as 2M x16 bit. The 64Mbit Flash memory is
the high performance non-volatile memory fabricated by CMOS
technology for peripheral circuit and DINOR IV(Diveded bit-line
NOR IV) architecture for the memory cell. All memory blocks are
locked and can be programmed or erased, when F-WP is low.
Using Software Lock Release function, program erase operation
can be executed.
The 32Mbit UtRAM is fabricated by SAMSUNG's advanced
CMOS technology using one transistor memory cell.
The device also supports deep power down mode for low standby
current. The K5T6432YT(B)M is suitable for use in program and
data memory of mobile communication system to reduce mount
area. This device is available in 81-ball TBGA Type package.
FEATURES
Power Supply voltage : 2.7 to 3.3 V
Organization
- Flash : 4,194,304 x 16 bit
- UtRAM : 2,097,152 x 16 bit
Access Time (@2.7V)
- Flash : 85 ns, UtRAM : 100 ns
Power Consumption (typical value)
- Flash Read Current : 20 mA (@5MHz)
Sequential Page Read Current : 5 mA (@5MHz)
Program/Erase Current : 35 mA (Max.)
Standby mode/Deep Power mode : 0.1
A
- UtRAM Operating Current : 18 mA
Standby Current :120
A
Deep Power Down : 5
A
Secode(Security Code) Block : Extra 32KW Block (Flash)
Block Group Protection / Unprotection (Flash)
128 words Page Program (Flash)
Flash Bank Size : 4Mb / 4Mb / 28Mb / 28Mb
Flash Endurance : 100,000 Program/Erase Cycles
Ambient Temperature : -25
C ~ 85
C
Endurance : 100,000 Program/Erase Cycles
Package :81 - ball TBGA Type - 10.8 x 10.4 mm, 0.8 mm pitch
GENERAL DESCRIPTION
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
BALL CONFIGURATION
BALL DESCRIPTION
Top View (Ball Down)
A7
UB
A8
A3
A6
LB
ZZ
A19
A2
A5
A18
F-RY/BY
A20
A9
A4
DQ6
F-CE
OE
DQ9
DQ3
DQ4
DQ13
1
2
3
4
5
6
WE
V
SS
A10
DQ1
A0
A1
A17
A11
A12
A15
A13
A21
A14
N.C
A16
DQ15
F-Vcc
7
8
N.C
DQ8
DQ2 DQ11
DQ5 DQ14
CS
DQ0 DQ10
Vcc
DQ12 DQ7
Vss
N.C
N.C
N.C
9
10
81 Ball TBGA , 0.8mm Pitch
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
F-WP
F-RP
F-Vcc
A
B
C
D
E
F
H
G
K
J
M
L
Ball Name
Description
A
0
to A
20
Address Input Balls (Common)
A
21
Address Input Ball (Flash Memory)
DQ
0
to DQ
15
Data Input/Output Balls (Common)
F-RP
Hardware Reset (Flash Memory)
F-WP
Write Protect (Flash Memory)
F-Vcc
Power Supply (Flash Memory)
Vcc
Power Supply (UtRAM))
Vss
Ground (Common)
UB
Upper Byte Enable (UtRAM)
LB
Lower Byte Enable (UtRAM)
F-CE
Chip Enable (Flash Memory)
ZZ
Deep Power Down (UtRAM)
WE
Write Enable (Common)
OE
Output Enable (Common)
F-RY/BY
Ready/Busy (Flash memory)
N.C
No Connection
11 12
MCP MEMORY
K5T6432YT(B)M
Revision 1.0
November 2001
- 3 -
ORDERING INFORMATION
K 5 T 64 32 Y T M - T 3 10
Samsung
MCP Memory
Device Type
Mitsubishi NOR Flash
+ UtRAM
NOR Flash Density
(Organization) , (BankSize)
64 : 64Mbit (x16 Selectable)
(4Mb, 4Mb, 28Mb,2 8Mb)
Block Architecture
T = Top Boot Block
B = Bottom Boot Block
Version
M = 1st Generation
UtRAM Access Time
10 = 100 ns
Operating Voltage Range
2.7V to 3.3V
Package
T = 81 TBGA
UtRAM Density , Organization
32Mbit , x16 Selectable
Flash Access Time
3 = 85 ns
PDF 
ZIP
