54
h
FE
Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
Darlington
2SB1647
I
C
V
C E
Characteristics (Typical)
h
F E
I
C
Characteristics (Typical)
h
F E
I
C
Temperature
Characteristics (Typical)
I
C
V
B E
Temperature
Characteristics (Typical)
V
C E
( s a t ) I
B
Characteristics (Typical)
P c T a Derating
1 0 m A
5 0 m A
3 m A
0
3
2
1
0 . 2
1
0.5
10
5
200
100
50
B a s e C u r r e n t I
B
( m A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
= 1 0A
I
C
= 1 5 A
I
C
= 5 A
0
1 5
1 0
5
0
3
2
1
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
125C (Case Temp)
25C (Case Temp)
30C (Case Temp)
0 . 2
0 . 5
1
5
1 0 1 5
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
1,000
10,000
50,000
5,000
T y p
( V
C E
= 4 V )
0 . 2
1
0 . 5
5
1 0 1 5
1000
5000
10000
50000
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
2 5 C
3 0 C
1 2 5 C
T i m e t ( m s )
0 . 1
1
3
0 . 5
1
1 0
1 0 0
1 0 0 0
2 0 0 0
Transient Thermal Resistance
j-a
(C/W)
0 . 0 2
0 . 1
0 . 0 5
0 . 5
1
5
1 0
0
4 0
2 0
6 0
Cut-off Frequency f
T
(MH
Z
)
( V
C E
= 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
Safe Operating Area (Single Pulse)
j - a
t
Characteristics
f
T
I
E
Characteristics (Typical)
0
0
5
1 0
1 5
2
6
4
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
1 . 5 m A
1 . 0 m A
0 . 8 m A
I
B
= 0 . 3 m A
0 . 5 m A
2mA
1 3 0
1 0 0
5 0
3 . 5
0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
W i t h o u t H e a t s i n k
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SD2560)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SB1647
150
150
5
15
1
130(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SB1647
100
max
100
max
150
min
5000
min
2.5
max
3.0
max
45
typ
320
typ
Unit
A
A
V
V
V
MHz
pF
Conditions
V
CB
=150V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=10A
I
C
=10A, I
B
=10mA
I
C
=10A, I
B
=10mA
V
CE
=12V, I
E
=2A
V
CB
=10V, f=1MHz
(Ta=25C)
(Ta=25C)
External Dimensions MT-100(TO3P)
15.6
0.4
9.6
19.9
0.3
4.0
2.0
5.0
0.2
1.8
3.2
0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
B
E
5.45
0.1
5.45
0.1
C
4.8
0.2
0.65
+0.2
-0.1
1.4
2.0
0.1
a
b
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(
)
4
I
C
(A)
10
V
BB2
(V)
5
I
B2
(mA)
10
t
on
(
s)
0.7typ
t
stg
(
s)
1.6typ
t
f
(
s)
1.1typ
I
B1
(mA)
10
V
BB1
(V)
10
Weight : Approx 6.0g
a. Type No.
b. Lot No.
B
E
C
( 7 0
)
Equivalent circuit
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