73
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switching Transistor)
Application : Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC3833
500
400
10
12(
Pulse
24)
4
100(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC3833
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
105
typ
Unit
A
A
V
V
V
MHz
pF
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=1.4A
I
C
=7A, I
B
=1.4A
V
CE
=12V, I
E
=1A
V
CB
=10V, f=1MHz
2SC3833
(Ta=25C)
(Ta=25C)
I
C
V
C E
Characteristics (Typical)
h
F E
I
C
Characteristics (Typical)
t
o n
t
s t g
t
f
I
C
Characteristics (Typical)
j - a
t
Characteristics
I
C
V
B E
Temperature
Characteristics (Typical)
V
CE
(sat),V
BE
(sat)I
C
Temperature Characteristics (Typical)
P c T a Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0
0
4
2
6
8
1 0
1 2
2
1
3
4
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
6 0 0 m A
4 0 0 m A
2 0 0 m A
8 0 0 m A
1 0 0 0 m
A
I
B
= 1 0 0 m A
0 . 0 2
0 . 1
0 . 0 5
1
5
1 0
0 . 5
0
1
( I
C
/ I
B
= 5 )
C o l l e c t o r C u r r e n t I
C
( A )
V
B E
( s a t )
125C (Case Temp)
25C (Case Temp)
55C (Case Temp)
25C
55C
V
C E
( s a t )
12
5
C
(C
as
e
T
e
m
p
)
1
0 . 5
1 0
5
0 . 1
0 . 5
5
8
1
Switching Time
t
on
t
stg
t
f
(
s)
C o l l e c t o r C u r r e n t I
C
( A )
t
s t g
t
o n
t
f
V
C C
2 0 0 V
I
C
: I
B 1
: I
B 2
= 1 0 : 1 : 2
0 . 1
1
2
0 . 5
1
1 0
1 0 0
1 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
j-a
(C/W)
1 0 0
5 0
3 . 5
0
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
W i t h o u t H e a t s i n k
1 0
5 0
5
5 0 0
1 0 0
1
0 . 5
0 . 1
0 . 0 5
0 . 0 1
1 0
3 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
I
B2
=1A
Duty:less than 1%
1 0
5 0
5
1 0 0
5 0 0
0 . 0 5
0 . 0 1
1
0 . 5
0 . 1
1 0
3 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
100
s
10ms
1ms
DC
(T
c=25 C
)
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
Without Heatsink
Natural Cooling
0
1 2
1 0
4
2
8
6
0
1 . 2
0 . 4
0 . 6
0 . 8
1 . 0
0 . 2
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
125C (Case Temp)
55C (Case Temp)
0 . 0 2
0 . 1
0 . 0 5
1
1 2
1 0
5
0 . 5
5
1 0
5 0
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
1 2 5 C
2 5 C
3 0 C
25C (Case Temp)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(
)
28.5
I
C
(A)
7
V
BB2
(V)
5
I
B2
(A)
1.4
t
on
(
s)
1.0
max
t
stg
(
s)
3.0
max
t
f
(
s)
0.5
max
I
B1
(A)
0.7
V
BB1
(V)
10
External Dimensions MT-100(TO3P)
15.6
0.4
9.6
19.9
0.3
4.0
2.0
5.0
0.2
1.8
3.2
0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
B
E
5.45
0.1
5.45
0.1
C
4.8
0.2
0.65
+0.2
-0.1
1.4
2.0
0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
PDF 
ZIP