83
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4020
900
800
7
3(
Pulse
6)
1.5
50(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC4020
100
max
100
max
800
min
10 to 30
0.5
max
1.2
max
6
typ
40
typ
Unit
A
A
V
V
V
MHz
pF
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=0.7A
I
C
=0.7A, I
B
=0.14A
I
C
=0.7A, I
B
=0.14A
V
CE
=12V, I
E
=0.3A
V
CB
=10V, f=1MHz
2SC4020
(Ta=25C)
(Ta=25C)
I
C
V
C E
Characteristics (Typical)
t
o n
t
s t g
t
f
I
C
Characteristics (Typical)
j - a
t
Characteristics
I
C
V
B E
Temperature
Characteristics (Typical)
V
CE
(sat),V
BE
(sat)I
C
Temperature Characteristics (Typical)
P c T a Derating
Reverse Bias Safe Operating Area
Safe Operating Area (Single Pulse)
0.03
0 . 1
0.05
1
5
0 . 5
0
2
1
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
Base-Emitter Saturation Voltage V
BE(sat)
(V)
C o l l e c t o r C u r r e n t I
C
( A )
V
B E
( s a t )
V
C E
( s a t )
h
F E
I
C
Characteristics (Typical)
0 . 1
1
0 . 5
3
0 . 2
0 . 5
5
6
1
Switching Time
t
on
t
stg
t
f
(
s)
C o l l e c t o r C u r r e n t I
C
( A )
t
s t g
t
o n
t
f
V
CC
250V
I
C
:I
B1
: I
B2
=2:0.3:1 Const.
0 . 3
1
5
0 . 5
1
1 0
1 0 0
1 0 0 0
2 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
j-a
(C/W)
5 0
4 0
3 0
2 0
1 0
2
0
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
W i t h o u t H e a t s i n k
1 0 0
5 0 0
5 0
1 0 0 0
1
0 . 5
0 . 1
1 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
L=3mH
I
B2
=1.0A
Duty:less than 1%
5 0
1 0 0
5 0 0
1 0 0 0
1
0 . 5
0 . 1
1 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
Without Heatsink
Natural Cooling
100
s
( I
C
/ I
B
= 5 )
0 . 0 2
0 . 1
0 . 0 5
1
3
0 . 5
2
5
1 0
5 0
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
0
3
1
2
0
1 . 2
0 . 4
0 . 6
0 . 8
1 . 0
0 . 2
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
125C (Case Temp)
25C (Case Temp)
30C (Case Temp)
1 2 5 C
2 5 C
3 0 C
0
0
2
1
3
2
1
3
4
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
3 0 0 m A
4 0 0 m A
500mA
1 4 0 m A
2 0 0 m A
1 0 0 m A
6 0 m A
I
B
= 2 0 m A
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(
)
357
I
C
(A)
0.7
V
BB2
(V)
5
I
B2
(A)
0.35
t
on
(
s)
1
max
t
stg
(
s)
5
max
t
f
(
s)
1
max
I
B1
(A)
0.1
V
BB1
(V)
10
External Dimensions MT-25(TO220)
B
E
2.5
2.5
C
16.0
0.7
12.0min
4.0max
8.8
0.2
1.35
0.65
+0.2
-0.1
10.2
0.2
3.75
0.2
3.0
0.2
4.8
0.2
1.4
2.0
0.1
a
b
Weight : Approx 2.6g
a. Type No.
b. Lot No.
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