145
Darlington
2SD2082
I
C
V
C E
Characteristics (Typical)
h
F E
I
C
Characteristics (Typical)
j - a
t
Characteristics
I
C
V
B E
Temperature
Characteristics (Typical)
V
C E
( s a t ) I
B
Characteristics (Typical)
P c T a Derating
0
0
1 0
2 0
2 6
2
4
6
1
3
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
3 m A
6 m A
1 . 5 m A
12mA
40mA 20mA
I
B
= 1 m A
Safe Operating Area (Single Pulse)
0
3
2
1
0 . 2
1
0.5
10
5
200
100
50
B a s e C u r r e n t I
B
( m A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
4 A
8 A
I
C
= 1 6 A
0 . 2
1
0 . 5
1 0
1 6
5
5000
30000
10000
1000
500
100
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
T y p
1ms
10ms
1 0
5 0
5
3
1 0 0
2 0 0
0 . 0 3
0 . 0 5
0 . 1
1
0 . 5
1 0
5 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
DC
Without Heatsink
Natural Cooling
0 . 1
1
5
0 . 5
1
1 0
1 0 0
1 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
j-a
(C/W)
100
s
0
1 6
1 2
8
4
0
2
1
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
125C (Case Temp)25C (Case Temp)
30C (Case Temp)
h
F E
I
C
Temperature
Characteristics (Typical)
0 . 0 2
1
1 0
5
1 6
5000
20000
10000
1000
500
100
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
1 2
5 C
3
0 C
25C
0 . 5
f
T
I
E
Characteristics (Typical)
0 . 0 5 0 . 1
0 . 5
1
5
1 0 1 6
0
2 0
1 0
3 0
Cut-off Frequency f
T
(MH
Z
)
( V
C E
= 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
8 0
6 0
4 0
2 0
3 . 5
0
0
5 0
2 5
7 5
1 2 5
1 0 0
1 5 0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
T y p
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1382)
Application : Driver for Solenoid, Motor and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2082
120
120
6
16(
Pulse
26)
1
75(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
2SD2082
10
max
10
max
120
min
2000
min
1.5
max
2.5
max
20
typ
210
typ
Unit
A
mA
V
V
V
MHz
pF
Conditions
V
CB
=120V
V
EB
=6V
I
C
=10mA
V
CE
=4V, I
C
=8A
I
C
=8A, I
B
=16mA
I
C
=8A, I
B
=16mA
V
CE
=12V, I
E
=1A
V
CB
=10V, f=1MHz
(Ta=25C)
(Ta=25C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
External Dimensions FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
0.1
3.3
0.2
1.6
3.3
1.75
0.8
0.2
2.15
1.05
+0.2
-0.1
5.45
0.1
23.0
0.3
16.2
9.5
0.2
5.5
15.6
0.2
5.5
0.2
3.45
3.35
0.65
+0.2
-0.1
0.2
3.0
0.8
a
b
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(
)
5
I
C
(A)
8
V
BB2
(V)
5
I
B2
(mA)
16
t
on
(
s)
0.6typ
t
stg
(
s)
7.0typ
t
f
(
s)
1.5typ
I
B1
(mA)
16
V
BB1
(V)
10
Weight : Approx 2.0g
a. Type No.
b. Lot No.
B
C
E
(2k
) (100
)
Equivalent
circuit
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