150
Darlington
2SD2401
I
C
V
C E
Characteristics (Typical)
h
F E
I
C
Characteristics (Typical)
h
F E
I
C
Temperature
Characteristics (Typical)
j - a
t
Characteristics
I
C
V
B E
Temperature
Characteristics (Typical)
V
C E
( s a t ) I
B
Characteristics (Typical)
P c T a Derating
Safe Operating Area (Single Pulse)
f
T
I
E
Characteristics (Typical)
0
0
2
4
6
1 2
1 0
8
2
4
6
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
10mA
2 . 5
m A
1 . 2 m A
1 . 5 m A
1 . 0 m A
2 . 0 m
A
0 . 8 m A
0 . 6 m A
I
B
= 0 . 4 m A
0 2
0 . 5
1
5
1 0 1 2
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
( V
C E
= 4 V )
1000
5000
10000
40000
T y p
0 . 1
1
2
0 . 5
1
1 0
1 0 0
1 0 0 0
5
5 0
5 0 0
2 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
j-a
(C/W)
0
1 2
8
1 0
2
4
6
0
2 . 6
2
1
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
( V
C E
= 4 V )
125C (Case Temp) 25C (Case Temp)
30C (Case Temp)
1 6 0
1 2 0
8 0
4 0
5
0
0
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
10ms
1 0
5 0
5
3
1 0 0
2 0 0
1 5 0
0 . 0 5
0 . 1
1
0 . 5
1 0
3 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
DC
100ms
Without Heatsink
Natural Cooling
0
3
2
1
0 . 2
1
0.5
10
5
200
100
50
B a s e C u r r e n t I
B
( m A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
I
C
= 5 A
I
C
= 7 A
I
C
= 1 0 A
( V
C E
= 4 V )
0 . 2
0 . 5
5
1 0 1 2
1
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
1000
600
5000
10000
50000
70000
1 2 5 C
2 5 C
3 0 C
0 . 0 2
0 . 1
1
1 0
0
2 0
4 0
1 0 0
8 0
6 0
Cut-off Frequency f
T
(MH
Z
)
( V
C E
= 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
T y p
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1570)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2401
160
150
5
12
1
150(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SD2401
100
max
100
max
150
min
5000
min
2.5
max
3.0
max
55
typ
95
typ
Unit
A
A
V
V
V
MHz
pF
Conditions
V
CB
=160V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=7mA
I
C
=7A, I
B
=7mA
V
CE
=12V, I
E
=2A
V
CB
=10V, f=1MHz
(Ta=25C)
(Ta=25C)
External Dimensions MT-200
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
70
R
L
(
)
10
I
C
(A)
7
V
BB2
(V)
5
I
B2
(mA)
7
t
on
(
s)
0.5typ
t
stg
(
s)
10.0typ
t
f
(
s)
1.1typ
I
B1
(mA)
7
V
BB1
(V)
10
2
3
1.05
+0.2
-0.1
B
E
5.45
0.1
5.45
0.1
2-3.2
0.1
36.4
0.3
9
24.4
0.2
7
21.4
0.3
20.0min
4.0max
0.65
+0.2
-0.1
3.0
+0.3
-0.1
6.0
0.2
2.1
a
b
C
Weight : Approx 18.4g
a. Type No.
b. Lot No.
B
C
E
( 7 0
)
Equivalent circuit
h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
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