162
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)
Application : Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
110
110
5
6
1
60(Tc=25C)
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Absolute maximum ratings
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Ratings
100
max
100
max
110
min
5000
min
2.5
max
3.0
max
60
typ
55
typ
Unit
A
A
V
V
V
MHz
pF
Conditions
V
CB
=110V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=5mA
V
CE
=12V, I
E
=0.5A
V
CB
=10V, f=1MHz
Darlington
2SD2643
(Ta=25C)
(Ta=25C)
I
C
V
C E
Characteristics (Typical)
h
F E
I
C
Characteristics (Typical)
h
F E
I
C
Temperature
Characteristics (Typical)
j - a
t
Characteristics
I
C
V
B E
Temperature
Characteristics (Typical)
V
C E
( s a t ) I
B
Characteristics (Typical)
P c T a Derating
Safe Operating Area (Single Pulse)
f
T
I
E
Characteristics (Typical)
0
0
2
4
6
2
6
4
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
I
B
= 0 . 1 m A
5mA
1mA
0.5mA
0 . 4 m A
0 . 3 m A
0 . 2 m A
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
0 . 5
1
5
1
1 0
1 0 0
1 0 0 0
5
5 0
5 0 0
2 0 0 0
T i m e t ( m s )
Transient Thermal Resistance
j-a
(C/W)
B a s e - E m i t t o r V o l t a g e V
B E
( V )
Collector Current I
C
(A)
6 0
4 0
2 0
3 . 5
0
0
5 0
2 5
7 5
1 2 5
1 0 0
1 5 0
A m b i e n t T e m p e r a t u r e T a ( C )
Maximum Power Dissipation P
C
(W)
With Infinite heatsink
Without Heatsink
1 0
5 0
5
3
1 0 0
2 0 0
0 . 0 5
1
0 . 5
0 . 1
1 0
2 0
5
C o l l e c t o r - E m i t t e r V o l t a g e V
C E
( V )
Collector Current I
C
(A)
DC
100ms
10ms
B a s e C u r r e n t I
B
( m A )
Collector-Emitter Saturation Voltage V
CE(sat)
(V)
C o l l e c t o r C u r r e n t I
C
( A )
DC Current Gain h
FE
0 . 0 2
0 . 1
1
6
0
4 0
2 0
8 0
6 0
Cut-off Frequency f
T
(MH
Z
)
( V
C E
= 1 2 V )
E m i t t e r C u r r e n t I
E
( A )
T y p
Without Heatsink
Natural Cooling
0
3
2
1
0 . 1
1
0.5
10
5
100
50
I
C
= 5 A
I
C
= 3 A
0 . 0 1
0 . 1
0 . 5
1
6
5
1000
500
100
5000
10000
50000
Typ
( V
C E
= 4 V )
0
6
4
2
0
2 . 5
2
1
( V
C E
= 4 V )
125C (Case Temp)
25C (Case Temp)
30C (Case Temp)
0 . 0 1
0 . 1
0 . 5
1
6
5
1000
500
100
5000
10000
50000
( V
C E
= 4 V )
1 2 5 C
2 5 C
3 0 C
External Dimensions FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
0.1
3.3
0.2
1.6
3.3
1.75
0.8
0.2
2.15
1.05
+0.2
-0.1
5.45
0.1
23.0
0.3
16.2
9.5
0.2
5.5
15.6
0.2
5.5
0.2
3.45
3.35
0.65
+0.2
-0.1
0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Part No.
b. Lot No.
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(
)
6
I
C
(A)
5
V
BB2
(V)
5
I
B2
(mA)
5
t
on
(
s)
0.8typ
t
stg
(
s)
6.2typ
t
f
(
s)
1.1typ
I
B1
(mA)
5
V
BB1
(V)
10
B
C
E
( 7 0
)
Equivalent circuit
h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
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