Ta=150
C
125
C
100
C
60
C
25
C
0
0.4
0.8
1.2
1.6
0.001
1
0.1
0.01
10
100
0
5
10
15
30
20
25
0
5
10
15
35
25
30
20
t / T
=1/6
t / T
=1/ 3, Sinewave
t / T
=1/2
D.C.
T
t
Tj =150C
0
20
40
60
80
100
0
5
10
15
25
30
20
0
50
100
150
0
5
10
20
15
V
R
=0V
30
25
T
t
Tj =150C
t / T
=1/6
t / T 1/ 3, Sinewave
=
t / T 1/2
=
D.C.
0
50
100
150
0
5
10
20
15
25
V
R
=100V
30
1t / T
=1/3
1t / T
=1/6
1 t / T
=1/2
Sinewave
D.C.
Ta =150
C
125
C
100
C
60
C
25
C
0
20
80
60
40
100
0.0001
0.001
1
0.1
0.01
10
100
100V, 30A Schottky barrier diode in TO220F package
FME-230A
T
t
Tj =150C
Sinewave
1 t / T
= 1/2
1 t / T
= 2/3
1 t / T
= 5/6
T
t
Tj =150C
5
15
10
20
30
25
40
45
35
50
0
10
20
30
50
40
40
44
42
46
50
48
54
58
56
52
60
0
10
20
30
50
40
0.75
0.77
0.76
0.78
0.79
0.80
0.81
0.82
0.83
0.84
0
10
20
30
50
40
sAbsolute maximum ratings
sElectrical characteristics
Parameter
Ratings
Unit
Conditions
10ms Half-cycle sinewave Single Shot
V
A
A
A
2
s
C
C
100
30
150
112
40 to +150
40 to +150
V
RM
I
F(AV)
I
FSM
I
2
t
Tj
Tstg
mA
mA
C/W
Parameter
Ratings
Unit
Conditions
V
0.85
1.5max
150max
4.0max
V
F
I
F
=15A
V
R
=V
RM
Tj =150
C
,
V
R
=V
RM
Junction-to-case
I
R
H.I
R
Rth( j-c)
(Ta = 25
C)
Reverse current I
R
(mA)
Reverse voltage V
R
(V)
Reverse power loss P
R
(W)
Reverse voltage V
R
(V)
Forward power loss P
F
(W)
Average forward current I
F(AV )
(A)
Average forward current I
F(AV)
(A)
Case temperature T
C
(
C)
Average forward current I
F(AV)
(A)
Case temperature T
C
(
C)
Forward voltage V
F
(V)
Forward current I
F
(A)
V
R
I
R
Characteristic (Typ.)
I
F(AV)
P
F
Characteristic
V
R
P
R
Characteristic
T
C
I
F(AV)
Characteristic
T
C
I
F(AV)
Characteristic
V
F
I
F
Characteristic (Typ.)
3.3
0.8
3.9
1.35
10.0
4.0
4.4
0.85
2.54
2.54
4.2
2.8
C 0.5
2.4
16.9
13.5
0.5
0.45
+0.2
0.1
External dimensions
(Unit: mm)
Flammability:
UL94V-0 or equivalent
V
F
(V
)
(I
F
=15A)
V
F
Distribution
N (pcs)
I
R
(
A)
( V
R
=100V, Ta=25
C)
I
R
Distribution
N (pcs)
I
R
(mA)
( V
R
=100V, Ta=150
C)
I
R
Distribution
N (pcs)
Reference data
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